BLF145,112 NXP Semiconductors, BLF145,112 Datasheet

TRANSISTOR RF DMOS SOT123A

BLF145,112

Manufacturer Part Number
BLF145,112
Description
TRANSISTOR RF DMOS SOT123A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF145,112

Package / Case
SOT-123A
Transistor Type
N-Channel
Frequency
28MHz
Gain
27dB
Voltage - Rated
65V
Current Rating
6A
Current - Test
1.3A
Voltage - Test
28V
Power - Output
8W
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
RF MOSFET Power
Resistance Drain-source Rds (on)
0.75 Ohms
Transistor Polarity
N-Channel
Configuration
Single Dual Source
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6 A
Power Dissipation
68 W
Maximum Operating Temperature
+ 200 C
Application
HF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
30W
Power Gain (typ)@vds
27@28V/20@28VdB
Frequency (max)
28MHz
Package Type
SOT-123A
Pin Count
4
Forward Transconductance (typ)
1.2(Min)S
Drain Source Resistance (max)
750@10Vmohm
Input Capacitance (typ)@vds
125@28VpF
Output Capacitance (typ)@vds
75@28VpF
Reverse Capacitance (typ)
7@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
35%
Mounting
Screw
Mode Of Operation
SSB Class-A/SSB Class-AB
Number Of Elements
1
Power Dissipation (max)
68000mW
Vswr (max)
50
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
568-2395
933817070112
BLF145
BLF145

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLF145,112
Manufacturer:
Skyworks
Quantity:
1 400
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.
http://www.philips.semiconductors.com use http://www.nxp.com
http://www.semiconductors.philips.com use http://www.nxp.com (Internet)
sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com
(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
- © NXP B.V. (year). All rights reserved. -
If you have any questions related to the data sheet, please contact our nearest sales
office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your
cooperation and understanding,
NXP Semiconductors
BLF145
HF power MOS transistor
Rev. 04 — 5 January 2007
IMPORTANT NOTICE
Product data sheet

Related parts for BLF145,112

BLF145,112 Summary of contents

Page 1

... IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. ...

Page 2

... NXP Semiconductors HF power MOS transistor FEATURES High power gain Low noise figure Good thermal stability Withstands full load mismatch. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for SSB transmitter applications in the HF frequency range. The transistor is encapsulated in a 4-lead, SOT123A flange package, with a ceramic cap ...

Page 3

... NXP Semiconductors HF power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V drain-source voltage DSS V gate-source voltage GSS I drain current (DC total power dissipation tot T storage temperature stg T junction temperature j THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to mounting base ...

Page 4

... NXP Semiconductors HF power MOS transistor CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER V drain-source breakdown voltage (BR)DSS I drain-source leakage current DSS I gate-source leakage current GSS V gate-source threshold voltage GSth V gate-source voltage difference of GS matched devices g forward transconductance fs R drain-source on-state resistance DSon ...

Page 5

... NXP Semiconductors HF power MOS transistor 4 handbook, halfpage T.C. (mV/ Fig.4 Temperature coefficient of gate-source voltage as a function of drain current; typical values. 0.8 handbook, halfpage R DS(on 0.6 0 Fig.6 Drain-source on-state resistance as a function of junction temperature; typical values. MGP036 handbook, halfpage (mA) ...

Page 6

... NXP Semiconductors HF power MOS transistor 20 handbook, halfpage C rs (pF MHz. GS Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. MRA900 (V) Rev January 2007 Product specification BLF145 ...

Page 7

... NXP Semiconductors HF power MOS transistor APPLICATION INFORMATION FOR CLASS-A OPERATION 0.3 K/ unless otherwise specified mb-h RF performance in SSB operation in a common source class-A circuit. MODE OF f OPERATION (MHz) SSB, class-A 28 Note 1. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope power the values should be decreased ...

Page 8

... NXP Semiconductors HF power MOS transistor handbook, full pagewidth C1 input MHz. List of components (see Fig.11) COMPONENT C1, C3, C8, C9 film dielectric trimmer C2, C10 multilayer ceramic chip capacitor; note 1 C4, C7 multilayer ceramic chip capacitor C5, C6 multilayer ceramic chip capacitor; note 1 C11 multilayer ceramic chip capacitor ...

Page 9

... NXP Semiconductors HF power MOS transistor APPLICATION INFORMATION FOR CLASS-B OPERATION 0.3 K/ unless otherwise specified mb-h RF performance in SSB operation in a common source class-AB circuit. MODE OPERATION (MHz) (V) SSB, class- Note 1. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope power the values should be decreased ...

Page 10

... NXP Semiconductors HF power MOS transistor handbook, full pagewidth C1 input MHz. List of components (see Fig.14) COMPONENT DESCRIPTION C1, C2 film dielectric trimmer C3, C6 multilayer ceramic chip capacitor C4, C5 multilayer ceramic chip capacitor; note 1 C7, C10 multilayer ceramic chip capacitor; note 1 C8, C9 film dielectric trimmer ...

Page 11

... NXP Semiconductors HF power MOS transistor 20 handbook, halfpage d 3 (dB Class-AB operation 0. 0.3 K/ MHz. th mb-h solid line dotted line Fig.15 Third order intermodulation distortion as a function of load power, typical values. 21 handbook, halfpage G p (dB Class-AB operation 0. 0 Fig.17 Power gain as a function of frequency, typical values ...

Page 12

... NXP Semiconductors HF power MOS transistor BLF145 scattering parameters 250 mA; note (MHz 0.90 70.90 10 0.81 108.90 20 0.76 140.20 30 0.75 151.90 40 0.75 157.90 50 0.75 161.40 60 0.76 163.70 70 0.77 165.30 80 0.77 166.60 90 0.78 167.50 100 0.79 168.40 125 0.81 170.40 150 0.83 172.00 175 ...

Page 13

... NXP Semiconductors HF power MOS transistor PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 7.47 5.82 9.73 0.18 mm 6.37 5.56 9.47 0.10 0.294 0.229 0.383 0.007 inches 0.251 0.219 0.373 0.004 ...

Page 14

... For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail ...

Page 15

... NXP Semiconductors Revision history Revision history Document ID Release date BLF145_N_4 20070105 • Modifications: corrections made to note 2 on page 8 • corrections made to note 2 on page 10 BLF145_3 20031013 (9397 750 11581) BLF145_CNV_2 19971212 (9397 750 xxxxx) Data sheet status Change notice Product data sheet - Product specifi ...

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