BLF2045,112 NXP Semiconductors, BLF2045,112 Datasheet - Page 4

• Manufacturer Part Number: BLF2045,112
• Description: TRANSISTOR RF LDMOS SOT467C
• Manufacturer: NXP Semiconductors

Specifications of BLF2045,112

• Package / Case: SOT467C
• Transistor Type: LDMOS
• Frequency: 2GHz
• Gain: 10dB
• Voltage - Rated: 65V
• Current Rating: 4.5A
• Current - Test: 180mA
• Voltage - Test: 26V
• Power - Output: 30W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.34 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 4.5 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Application: UHF
• Channel Type: N
• Drain Source Voltage (max): 65V
• Output Power (max): 30W
• Power Gain (typ)@vds: 10(Min)@26VdB
• Frequency (min): 1.8GHz
• Frequency (max): 2.2GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 2S
• Drain Source Resistance (max): 340(Typ)@12.5Vmohm
• Input Capacitance (typ)@vds: 38@26VpF
• Output Capacitance (typ)@vds: 31@26VpF
• Reverse Capacitance (typ): 1.7@26VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 30(Max)%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2387; 934055383112; BLF2045; BLF2045

Philips Semiconductors
CHARACTERISTICS
T
2004 Feb 11
handbook, halfpage
V
V
I
I
I
g
R
C
C
C
SYMBOL
j
DSS
DSX
GSS
fs
(BR)DSS
GSth
= 25 C unless otherwise specified.
DSon
iss
oss
rss
UHF power LDMOS transistor
V
Fig.2
GS
(pF)
10
= 0; f = 1 MHz.
C
10
1
2
0
Input, output and feedback capacitance as
functions of drain-source voltage, typical
values.
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
input capacitance
output capacitance
feedback capacitance
10
PARAMETER
20
V DS (V)
C oss
C iss
MCD889
C rss
30
V
V
V
V
V
V
V
V
V
V
GS
DS
GS
GS
GS
DS
GS
GS
GS
GS
= 10 V; I
= 10 V; I
= 0; I
= 0; V
= V
= 15 V; V
= V
= 0; V
= 0; V
= 0; V
4
GSth
GSth
CONDITIONS
D
DS
DS
DS
DS
= 0.7 mA
+ 9 V; V
+ 9 V; I
D
D
= 26 V
= 26 V; f = 1 MHz
= 26 V; f = 1 MHz
= 26 V; f = 1 MHz
= 70 mA
= 2.5 A
DS
= 0
D
DS
= 2.5 A
= 10 V
65
1.5
9
MIN.
2
340
38
31
1.7
TYP.
Product specification
BLF2045
3.5
5
125
MAX.
V
V
A
nA
S
m
pF
pF
pF
UNIT
A