BLF2045,112 NXP Semiconductors, BLF2045,112 Datasheet - Page 6

• Manufacturer Part Number: BLF2045,112
• Description: TRANSISTOR RF LDMOS SOT467C
• Manufacturer: NXP Semiconductors

Specifications of BLF2045,112

• Package / Case: SOT467C
• Transistor Type: LDMOS
• Frequency: 2GHz
• Gain: 10dB
• Voltage - Rated: 65V
• Current Rating: 4.5A
• Current - Test: 180mA
• Voltage - Test: 26V
• Power - Output: 30W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.34 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 4.5 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Application: UHF
• Channel Type: N
• Drain Source Voltage (max): 65V
• Output Power (max): 30W
• Power Gain (typ)@vds: 10(Min)@26VdB
• Frequency (min): 1.8GHz
• Frequency (max): 2.2GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 2S
• Drain Source Resistance (max): 340(Typ)@12.5Vmohm
• Input Capacitance (typ)@vds: 38@26VpF
• Output Capacitance (typ)@vds: 31@26VpF
• Reverse Capacitance (typ): 1.7@26VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 30(Max)%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2387; 934055383112; BLF2045; BLF2045

Philips Semiconductors
2004 Feb 11
handbook, halfpage
handbook, halfpage
UHF power LDMOS transistor
V
f
Fig.4
V
Fig.6
Fig.6
1
DS
DS
(dBc)
= 2000 MHz; f
d im
( )
= 26 V; I
z i
= 26 V; I
20
40
60
0
5
4
3
2
1
0
1.8
0
Intermodulation distortion as a function of
peak envelope load power; typical values.
Input impedance as a function of frequency
Input impedance as a function of frequency
(series components); typical values.
(series components); typical values.
DQ
DQ
= 180 mA; T
= 180 mA; P
2
10
= 2000.1 MHz.
1.9
20
h
L
= 45 W; T
25 C;
2
x i
r i
30
h
d 3
d 5
d 7
25 C.
2.1
P L (PEP) (W)
40
f (GHz)
MCD891
MCD893
2.2
50
6
handbook, halfpage
handbook, halfpage
V
(1) I
(2) I
(3) I
Fig.5
V
Fig.7
DS
DS
(dBc)
( )
d 3
Z L
= 26 V; T
= 26 V; I
20
40
60
DQ
DQ
DQ
0
6
4
2
0
2
4
6
1.8
0
= 140 mA.
= 180 mA.
= 220 mA.
Intermodulation distortion as a function of
peak envelope load power; typical values.
Load impedance as a function of frequency
(series components); typical values.
DQ
h
(1)
= 180 mA; P
25 C; f
10
(2)
1.9
(3)
1
= 2000 MHz; f
20
L
R L
X L
= 45 W; T
2
30
h
2
= 2000.1 MHz.
25 C.
Product specification
2.1
P L (PEP) (W)
40
f (GHz)
BLF2045
MCD894
MCD892
2.2
50