BLF2045,112 NXP Semiconductors, BLF2045,112 Datasheet - Page 7

• Manufacturer Part Number: BLF2045,112
• Description: TRANSISTOR RF LDMOS SOT467C
• Manufacturer: NXP Semiconductors

Specifications of BLF2045,112

• Package / Case: SOT467C
• Transistor Type: LDMOS
• Frequency: 2GHz
• Gain: 10dB
• Voltage - Rated: 65V
• Current Rating: 4.5A
• Current - Test: 180mA
• Voltage - Test: 26V
• Power - Output: 30W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.34 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 4.5 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Application: UHF
• Channel Type: N
• Drain Source Voltage (max): 65V
• Output Power (max): 30W
• Power Gain (typ)@vds: 10(Min)@26VdB
• Frequency (min): 1.8GHz
• Frequency (max): 2.2GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 2S
• Drain Source Resistance (max): 340(Typ)@12.5Vmohm
• Input Capacitance (typ)@vds: 38@26VpF
• Output Capacitance (typ)@vds: 31@26VpF
• Reverse Capacitance (typ): 1.7@26VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 30(Max)%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2387; 934055383112; BLF2045; BLF2045

Philips Semiconductors
2004 Feb 11
handbook, full pagewidth
UHF power LDMOS transistor
50
input
L1
C1
C2
L2
C3
L3
L4
L5
C5
R1
Fig.8 Class-AB test circuit for 2 GHz.
C4
L6
C6
V gate
L7
7
L8
L9
L10
L1 2
L11
C7
L13
C11 C12
L14
C10
L15
C8
C9
C13 C14
L16
R2
F1
Product specification
MCD895
output
C15 C16
50
BLF2045
V dd