BLF2045,112 NXP Semiconductors, BLF2045,112 Datasheet - Page 9

TRANSISTOR RF LDMOS SOT467C

BLF2045,112

Manufacturer Part Number
BLF2045,112
Description
TRANSISTOR RF LDMOS SOT467C
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF2045,112

Package / Case
SOT467C
Transistor Type
LDMOS
Frequency
2GHz
Gain
10dB
Voltage - Rated
65V
Current Rating
4.5A
Current - Test
180mA
Voltage - Test
26V
Power - Output
30W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.34 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
4.5 A
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Application
UHF
Channel Type
N
Drain Source Voltage (max)
65V
Output Power (max)
30W
Power Gain (typ)@vds
10(Min)@26VdB
Frequency (min)
1.8GHz
Frequency (max)
2.2GHz
Package Type
LDMOST
Pin Count
3
Forward Transconductance (typ)
2S
Drain Source Resistance (max)
340(Typ)@12.5Vmohm
Input Capacitance (typ)@vds
38@26VpF
Output Capacitance (typ)@vds
31@26VpF
Reverse Capacitance (typ)
1.7@26VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
30(Max)%
Mounting
Screw
Mode Of Operation
2-Tone Class-AB
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
568-2387
934055383112
BLF2045
BLF2045
Philips Semiconductors
2004 Feb 11
handbook, full pagewidth
UHF power LDMOS transistor
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (
The other side is unetched and serves as a ground plane.
50
input
R1
C6
Fig.9 Component layout for 2 GHz class-AB test circuit.
C1 C2
PH98072 IN
PH98072 IN
C5
C3
50
C4
9
C16
C15
R2
PH98073 OUT
PH98073 OUT
F1
C7
50
C14
C10
C8
C9
r
= 6.15), thickness 0.64 mm.
C13
MCD896
C12
C11
50
output
60
Product specification
BLF2045

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