BLF2045,112 NXP Semiconductors, BLF2045,112 Datasheet - Page 9
BLF2045,112
Manufacturer Part Number
BLF2045,112
Description
TRANSISTOR RF LDMOS SOT467C
Manufacturer
NXP Semiconductors
Datasheet
1.BLF2045112.pdf
(12 pages)
Specifications of BLF2045,112
Package / Case
SOT467C
Transistor Type
LDMOS
Frequency
2GHz
Gain
10dB
Voltage - Rated
65V
Current Rating
4.5A
Current - Test
180mA
Voltage - Test
26V
Power - Output
30W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.34 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
4.5 A
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Application
UHF
Channel Type
N
Drain Source Voltage (max)
65V
Output Power (max)
30W
Power Gain (typ)@vds
10(Min)@26VdB
Frequency (min)
1.8GHz
Frequency (max)
2.2GHz
Package Type
LDMOST
Pin Count
3
Forward Transconductance (typ)
2S
Drain Source Resistance (max)
340(Typ)@12.5Vmohm
Input Capacitance (typ)@vds
38@26VpF
Output Capacitance (typ)@vds
31@26VpF
Reverse Capacitance (typ)
1.7@26VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
30(Max)%
Mounting
Screw
Mode Of Operation
2-Tone Class-AB
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
568-2387
934055383112
BLF2045
BLF2045
934055383112
BLF2045
BLF2045
Philips Semiconductors
2004 Feb 11
handbook, full pagewidth
UHF power LDMOS transistor
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (
The other side is unetched and serves as a ground plane.
50
input
R1
C6
Fig.9 Component layout for 2 GHz class-AB test circuit.
C1 C2
PH98072 IN
PH98072 IN
C5
C3
50
C4
9
C16
C15
R2
PH98073 OUT
PH98073 OUT
F1
C7
50
C14
C10
C8
C9
r
= 6.15), thickness 0.64 mm.
C13
MCD896
C12
C11
50
output
60
Product specification
BLF2045