BLF245B,112 NXP Semiconductors, BLF245B,112 Datasheet

TRANSISTOR RF DMOS SOT279A

BLF245B,112

Manufacturer Part Number
BLF245B,112
Description
TRANSISTOR RF DMOS SOT279A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF245B,112

Package / Case
SOT-279A
Transistor Type
2 N-Channel (Dual)
Frequency
175MHz
Gain
18dB
Voltage - Rated
65V
Current Rating
4.5A
Current - Test
25mA
Voltage - Test
28V
Power - Output
30W
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Resistance Drain-source Rds (on)
1.5 Ohm @ 10 V
Transistor Polarity
N-Channel
Configuration
Dual Common Source
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.5 A
Power Dissipation
75000 mW
Maximum Operating Temperature
+ 200 C
Application
VHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
30W
Power Gain (typ)@vds
18@28VdB
Frequency (max)
175MHz
Package Type
CDFM
Pin Count
5
Forward Transconductance (typ)
0.85S
Drain Source Resistance (max)
1500@10Vmohm
Input Capacitance (typ)@vds
60@28VpF
Output Capacitance (typ)@vds
40@28VpF
Reverse Capacitance (typ)
4.5@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
65%
Mounting
Screw
Mode Of Operation
CW Class-B
Number Of Elements
2
Power Dissipation (max)
75000mW
Vswr (max)
50
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-2388
934003520112
BLF245B
BLF245B
Product specification
Supersedes data of 2000 Oct 17
DATA SHEET
BLF245B
VHF push-pull power MOS
transistor
DISCRETE SEMICONDUCTORS
M3D096
2003 Aug 04

Related parts for BLF245B,112

BLF245B,112 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET BLF245B VHF push-pull power MOS transistor Product specification Supersedes data of 2000 Oct 17 M3D096 2003 Aug 04 ...

Page 2

Philips Semiconductors VHF push-pull power MOS transistor FEATURES High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the ...

Page 3

Philips Semiconductors VHF push-pull power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER Per transistor section unless otherwise specified V drain-source voltage DS V gate-source voltage drain current D P ...

Page 4

Philips Semiconductors VHF push-pull power MOS transistor CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER Per transistor section V drain-source breakdown voltage (BR)DSS I drain-source leakage current DSS I gate-source leakage current GSS V gate-source threshold voltage ...

Page 5

Philips Semiconductors VHF push-pull power MOS transistor 2 handbook, halfpage T.C. (mV/ Fig.4 Temperature coefficient of gate-source voltage as a function of drain current; typical values per section. ...

Page 6

Philips Semiconductors VHF push-pull power MOS transistor 20 handbook, halfpage C rs (pF MHz. GS Fig.8 Feedback capacitance as a function of drain-source voltage; typical values per section. APPLICATION ...

Page 7

Philips Semiconductors VHF push-pull power MOS transistor 20 handbook, halfpage (dB Class-B operation 8.8 j12 ...

Page 8

Acrobat reader. white to force landscape pages to be ... input 175 ...

Page 9

Philips Semiconductors VHF push-pull power MOS transistor List of components (see Fig.11) COMPONENT C1,C2 multilayer ceramic chip capacitor; note 1 C3 multilayer ceramic chip capacitor; note 1 C4 film dielectric trimmer C5, C25, C26 multilayer ceramic chip capacitor; note 1 ...

Page 10

Philips Semiconductors VHF push-pull power MOS transistor handbook, full pagewidth copper strap rivet copper strap andbook, full pagewidth The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being ...

Page 11

Philips Semiconductors VHF push-pull power MOS transistor 10 handbook, halfpage 100 200 Class-B operation ...

Page 12

Philips Semiconductors VHF push-pull power MOS transistor PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 6.84 1.65 ...

Page 13

Philips Semiconductors VHF push-pull power MOS transistor DATA SHEET STATUS DATA SHEET PRODUCT LEVEL (1) STATUS STATUS I Objective data Development II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before ...

Page 14

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited ...

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