BLF1046,112 NXP Semiconductors, BLF1046,112 Datasheet

TRANSISTOR RF LDMOS SOT467C

BLF1046,112

Manufacturer Part Number
BLF1046,112
Description
TRANSISTOR RF LDMOS SOT467C
Manufacturer
NXP Semiconductors
Datasheet
1.BLF1046112.pdf (12 pages)

Specifications of BLF1046,112

Package / Case
SOT467C
Transistor Type
LDMOS
Frequency
960MHz
Gain
14dB
Voltage - Rated
65V
Current Rating
4.5A
Current - Test
300mA
Voltage - Test
26V
Power - Output
45W
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
RF MOSFET Power
Resistance Drain-source Rds (on)
0.3 Ohms
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.5 A
Maximum Operating Temperature
+ 200 C
Application
UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
45W
Power Gain (typ)@vds
14(Min)@26VdB
Frequency (max)
1GHz
Package Type
LDMOST
Pin Count
3
Forward Transconductance (typ)
2S
Drain Source Resistance (max)
300(Typ)@14Vmohm
Input Capacitance (typ)@vds
46@26VpF
Output Capacitance (typ)@vds
37@26VpF
Reverse Capacitance (typ)
1.5@26VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
46(Min)%
Mounting
Screw
Mode Of Operation
1-Tone Class-AB/2-Tone Class-AB/CW Class-AB
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
568-2384
934055384112
BLF1046
BLF1046
Product specification
Supersedes data of 2000 Oct 04
DATA SHEET
BLF1046
UHF power LDMOS transistor
DISCRETE SEMICONDUCTORS
M3D381
2000 Dec 20

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BLF1046,112 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET BLF1046 UHF power LDMOS transistor Product specification Supersedes data of 2000 Oct 04 M3D381 2000 Dec 20 ...

Page 2

Philips Semiconductors UHF power LDMOS transistor FEATURES High power gain Easy power control Excellent ruggedness Source on underside eliminates DC isolators, reducing common mode inductance Designed for broadband operation ( GHz). APPLICATIONS Communication transmitter applications in the UHF ...

Page 3

Philips Semiconductors UHF power LDMOS transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to th j-h heatsink Note 1. Determined under specified RF operating conditions, based on maximum peak junction temperature. CHARACTERISTICS unless otherwise ...

Page 4

Philips Semiconductors UHF power LDMOS transistor 20 handbook, halfpage G p (dB 330 mA 960 MHz tuned for high efficiency; ...

Page 5

Philips Semiconductors UHF power LDMOS transistor 0 handbook, halfpage d 5 (dBc (1) (3) ( 960 MHz tuned for ...

Page 6

Philips Semiconductors UHF power LDMOS transistor 0 handbook, halfpage ACPR (dBc 200 KHz 250 KHz 60 400 KHz 300 mA 960 MHz; ...

Page 7

Philips Semiconductors UHF power LDMOS transistor 4 handbook, halfpage 840 880 300 mA tuned ...

Page 8

Philips Semiconductors UHF power LDMOS transistor R1 handbook, full pagewidth C13 F1 C9 C10 input C2 C16 Fig.15 Class-AB broadband test circuit 800 to 1000 MHz. handbook, full pagewidth input C16 ...

Page 9

Philips Semiconductors UHF power LDMOS transistor List of components (see Figs 15 and 16) COMPONENT DESCRIPTION C1, C7 multilayer ceramic chip capacitor; note C2, C6 Tekelec variable capacitor C3, C4 multilayer ceramic chip capacitor; note 1 13 ...

Page 10

Philips Semiconductors UHF power LDMOS transistor PACKAGE OUTLINE Flanged LDMOST ceramic package; 2 mounting holes; 2 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT 4.67 5.59 0.15 ...

Page 11

Philips Semiconductors UHF power LDMOS transistor DATA SHEET STATUS PRODUCT DATA SHEET STATUS STATUS Objective specification Development Preliminary specification Qualification Product specification Production Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS ...

Page 12

Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. + 101 ...

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