BLF861A,112 NXP Semiconductors, BLF861A,112 Datasheet

TRANSISTOR RF LDMOS SOT540A

BLF861A,112

Manufacturer Part Number
BLF861A,112
Description
TRANSISTOR RF LDMOS SOT540A
Manufacturer
NXP Semiconductors
Datasheet
1.BLF861A112.pdf (16 pages)

Specifications of BLF861A,112

Package / Case
SOT540A
Transistor Type
LDMOS
Frequency
860MHz
Gain
14.5dB
Voltage - Rated
65V
Current Rating
18A
Current - Test
1A
Voltage - Test
32V
Power - Output
150W
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Resistance Drain-source Rds (on)
0.16 Ohm (Typ)
Transistor Polarity
N-Channel
Configuration
Single Dual Drain Dual Gate
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
18 A
Power Dissipation
318000 mW
Maximum Operating Temperature
+ 200 C
Application
UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
150W
Power Gain (typ)@vds
14.5@32V/14(Min)@32VdB
Frequency (max)
860MHz
Package Type
LDMOST
Pin Count
5
Forward Transconductance (typ)
4S
Drain Source Resistance (max)
160(Typ)mohm
Input Capacitance (typ)@vds
82@32VpF
Output Capacitance (typ)@vds
40@32VpF
Reverse Capacitance (typ)
6@32VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
50%
Mounting
Screw
Mode Of Operation
2-Tone Class-AB/CW Class-AB/PAL BG Class-AB
Number Of Elements
1
Power Dissipation (max)
318000mW
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-2407
934056499112
BLF861A
BLF861A

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
BLF861A,112
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Product specification
Supersedes data of 2000 Aug 04
DATA SHEET
BLF861A
UHF power LDMOS transistor
M3D392
DISCRETE SEMICONDUCTORS
2001 Feb 09

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BLF861A,112 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF861A UHF power LDMOS transistor Product specification Supersedes data of 2000 Aug 04 2001 Feb 09 ...

Page 2

Philips Semiconductors UHF power LDMOS transistor FEATURES High power gain Easy power control Excellent ruggedness Designed to withstand abrupt load mismatch errors Source on underside eliminates DC isolators; reducing common mode inductance Designed for broadband operation (UHF band) Internal input ...

Page 3

Philips Semiconductors UHF power LDMOS transistor THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to mounting base th j-mb R thermal resistance from mounting base to heatsink th mb-h CHARACTERISTICS per section; unless otherwise specified. j ...

Page 4

Philips Semiconductors UHF power LDMOS transistor APPLICATION INFORMATION RF performance in a common source 860 MHz test circuit. T MODE OF f OPERATION (MHz) CW; class-AB 860 2-tone; class- 860 860.1 1 PAL BG (TV); ...

Page 5

Philips Semiconductors UHF power LDMOS transistor 20 handbook, halfpage G p (dB 100 2-tone 860 ...

Page 6

Acrobat reader. white to force landscape pages to be ... R2 V bias C19 C18 C16 ...

Page 7

Philips Semiconductors UHF power LDMOS transistor List of components class-AB broadband test circuit (see Figs 8 and 9) COMPONENT C1 multilayer ceramic chip capacitor; note 1 C2 multilayer ceramic chip capacitor; note 1 C3, C6, C9 tekelec trimmer C4 multilayer ...

Page 8

Philips Semiconductors UHF power LDMOS transistor COMPONENT R1 resistor R2 resistor R3 resistor R4 resistor R5, R6 SMD resistor Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 180R or capacitor of ...

Page 9

Philips Semiconductors UHF power LDMOS transistor 95 handbook, full pagewidth V bias C16 C17 R6 Dimensions in mm. The components are situated on one side of the Rogers 5880 printed-circuit board, the ...

Page 10

Philips Semiconductors UHF power LDMOS transistor 16 handbook, halfpage (dB 400 500 600 700 PAL BG signal (TV ...

Page 11

Philips Semiconductors UHF power LDMOS transistor PACKAGE OUTLINE Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 5.77 8.51 ...

Page 12

Philips Semiconductors UHF power LDMOS transistor DATA SHEET STATUS PRODUCT DATA SHEET STATUS STATUS Objective specification Development Preliminary specification Qualification Product specification Production Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS ...

Page 13

Philips Semiconductors UHF power LDMOS transistor 2001 Feb 09 NOTES 13 Product specification BLF861A ...

Page 14

Philips Semiconductors UHF power LDMOS transistor 2001 Feb 09 NOTES 14 Product specification BLF861A ...

Page 15

Philips Semiconductors UHF power LDMOS transistor 2001 Feb 09 NOTES 15 Product specification BLF861A ...

Page 16

Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. + 101 ...

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