BLF278,112 NXP Semiconductors, BLF278,112 Datasheet

TRANSISTOR RF DMOS SOT262A1

BLF278,112

Manufacturer Part Number
BLF278,112
Description
TRANSISTOR RF DMOS SOT262A1
Manufacturer
NXP Semiconductors
Datasheet
1.BLF278112.pdf (23 pages)

Specifications of BLF278,112

Package / Case
SOT-262A1
Transistor Type
2 N-Channel (Dual)
Frequency
108MHz
Gain
22dB
Voltage - Rated
125V
Current Rating
18A
Current - Test
100mA
Voltage - Test
50V
Power - Output
300W
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Resistance Drain-source Rds (on)
0.3 Ohm @ 10 V
Transistor Polarity
N-Channel
Configuration
Dual Common Source
Drain-source Breakdown Voltage
125 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
18 A
Power Dissipation
500000 mW
Maximum Operating Temperature
+ 200 C
Application
VHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
125V
Power Gain (typ)@vds
20(Min)@50V/18@50V/16@50VdB
Frequency (max)
225MHz
Package Type
CDFM
Pin Count
5
Forward Transconductance (typ)
6.2S
Drain Source Resistance (max)
300@10Vmohm
Input Capacitance (typ)@vds
480@50VpF
Output Capacitance (typ)@vds
190@50VpF
Reverse Capacitance (typ)
14@50VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
80%
Mounting
Screw
Mode Of Operation
CW Class-AB/CW Class-B/CW Class-C
Number Of Elements
2
Power Dissipation (max)
500000mW
Vswr (max)
7
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-2412
933978520112
BLF278
BLF278
Product Specification
Supersedes data of 1996 Oct 21
DATA SHEET
BLF278
VHF push-pull power MOS
transistor
M3D091
DISCRETE SEMICONDUCTORS
2003 Sep 19

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BLF278,112 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLF278 VHF push-pull power MOS transistor Product Specification Supersedes data of 1996 Oct 21 2003 Sep 19 ...

Page 2

Philips Semiconductors VHF push-pull power MOS transistor FEATURES High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability. APPLICATIONS Broadcast transmitters in the VHF frequency range. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor ...

Page 3

Philips Semiconductors VHF push-pull power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER Per transistor section V drain-source voltage DS V gate-source voltage GS I drain current (DC total power dissipation ...

Page 4

Philips Semiconductors VHF push-pull power MOS transistor CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER Per transistor section V drain-source breakdown voltage V (BR)DSS I drain-source leakage current DSS I gate-source leakage current GSS V gate-source threshold ...

Page 5

Philips Semiconductors VHF push-pull power MOS transistor 0 handbook, halfpage T.C. (mV/ Fig.4 Temperature coefficient of gate-source voltage as a function of drain current; typical values ...

Page 6

Philips Semiconductors VHF push-pull power MOS transistor 400 handbook, halfpage C rs (pF) 300 200 100 MHz. GS Fig.8 Feedback capacitance as a function of drain-source voltage; typical values ...

Page 7

Philips Semiconductors VHF push-pull power MOS transistor 30 handbook, halfpage G p (dB) ( 200 Class-B operation 3.2 + j4.3 (per section ...

Page 8

Acrobat reader. white to force landscape pages to be ... handbook, full pagewidth A 50 input ...

Page 9

Philips Semiconductors VHF push-pull power MOS transistor List of components (see Figs 12 and 13). COMPONENT DESCRIPTION C1, C2, C33, C34 multilayer ceramic chip capacitor; note 1 C3, C4 multilayer ceramic chip capacitor; note 1 C5, C6, C28 film dielectric ...

Page 10

Philips Semiconductors VHF push-pull power MOS transistor COMPONENT DESCRIPTION L17, L18 stripline; note 2 L19, L20 stripline; note 2 L21, L23 stripline; note 2 L22 semi-rigid cable; note 3 R1 metal film resistor R2 turn potentiometer R3, R6 ...

Page 11

Philips Semiconductors VHF push-pull power MOS transistor handbook, full pagewidth 130 strap strap V DD1 R11 50 T1 input Dimensions in mm. The circuit and components are situated on one side of ...

Page 12

Philips Semiconductors VHF push-pull power MOS transistor 2 handbook, halfpage Class-B operation (per section); ...

Page 13

Philips Semiconductors VHF push-pull power MOS transistor Class-AB operation RF performance in CW operation in a common source push-pull test circuit. T otherwise specified 2.8 GS MODE OF OPERATION CW, class-AB Ruggedness in class-AB operation The BLF278 is ...

Page 14

Philips Semiconductors VHF push-pull power MOS transistor 20 handbook, halfpage (1) ( (dB 100 Class-AB operation 0. (per section 2.8 ...

Page 15

Acrobat reader. white to force landscape pages to be ... input R11 ...

Page 16

Philips Semiconductors VHF push-pull power MOS transistor List of components (see Figs 21 and 22). COMPONENT DESCRIPTION C1, C2 multilayer ceramic chip capacitor; note 1 C3, C4, C31, C32 multilayer ceramic chip capacitor; note 1 C5 film dielectric trimmer C6, ...

Page 17

Philips Semiconductors VHF push-pull power MOS transistor COMPONENT DESCRIPTION L14, L17 2 grade 3B Ferroxcube wideband HF chokes in parallel 3 L15, L16 1 turns enamelled 2 mm copper 4 wire L18, L19 stripline; note 2 L20, L21 stripline; note ...

Page 18

Philips Semiconductors VHF push-pull power MOS transistor 119 handbook, full pagewidth strap Hollow rivets strap V DD1 R11 input C2 L3 Dimensions in mm. The circuit and components are situated on one side of the PTFE ...

Page 19

Philips Semiconductors VHF push-pull power MOS transistor 2 handbook, halfpage –2 150 200 Class-AB operation 2.8 (per section); ...

Page 20

Philips Semiconductors VHF push-pull power MOS transistor BLF278 scattering parameters 500 mA; note (MHz 0.87 142.1 10 0.88 159.8 20 0.88 169.0 30 0.88 ...

Page 21

Philips Semiconductors VHF push-pull power MOS transistor PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 5.77 5.85 ...

Page 22

Philips Semiconductors VHF push-pull power MOS transistor DATA SHEET STATUS DATA SHEET PRODUCT LEVEL (1) STATUS STATUS I Objective data Development II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before ...

Page 23

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited ...

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