BLF574,112 NXP Semiconductors, BLF574,112 Datasheet
BLF574,112
Specifications of BLF574,112
934061965112
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BLF574,112 Summary of contents
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BLF574 HF / VHF power LDMOS transistor Rev. 02 — 24 February 2009 1. Product profile 1.1 General description A 500 W to 600 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin [1] Connected to flange. 3. Ordering information Table 3. Type number BLF574 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg Thermal characteristics Table 5. Symbol R th(j-c) [1] R th(j-c) BLF574_2 Product data sheet Pinning ...
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... NXP Semiconductors 6. Characteristics Table per section unless otherwise specified. j Symbol Parameter V (BR)DSS V GS(th) V GSq I DSS I DSX I GSS DS(on iss C oss Table 7. Mode of operation: CW 225 MHz; RF performance unless otherwise specified class-AB production test circuit. case Symbol Parameter BLF574_2 Product data sheet ...
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... NXP Semiconductors Fig 1. 6.1 Ruggedness in class-AB operation The BLF574 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 400 225 MHz. L BLF574_2 Product data sheet 500 C oss (pF) 400 300 200 100 MHz. GS Output capacitance as a function of drain-source voltage; typical values per section Rev. 02 — ...
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... NXP Semiconductors 7. Application information 7.1 RF performance RF performance in a 500 W application circuit at 225 MHz. 7.1.1 1-Tone (dB 200 1000 mA 225 MHz Fig 2. Power gain and drain efficiency as functions of load power; typical values BLF574_2 Product data sheet 001aaj127 (%) (dB 400 600 P (W) L(PEP) Fig 3. Rev. 02 — 24 February 2009 ...
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... NXP Semiconductors (1) P Fig 4. 7.1.2 2-Tone (dB 200 400 1000 mA 225.05 MHz. 2 Fig 5. Power gain and drain efficiency as functions of peak envelope load power; typical values BLF574_2 Product data sheet (dBm 1000 mA 225 MHz 57.32 dBm (540 W) L(1dB) Load power as function of source power; typical values ...
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... NXP Semiconductors 7.1.3 Application circuit Table 8. For application circuit, see Printed-Circuit Board (PCB): Rogers 5880; metallization); thickness copper plating = 35 m. Component Description C1, C2, C23, C24 C3 C4, C5 C6, C9 C7, C8, C10, C11 C12, C16 C13, C15 C14 C17, C19 C18 C20, C22 C21 ...
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... NXP Semiconductors Fig 7. Component layout for class-AB application circuit BLF574_2 Product data sheet C10 L10 C11 Rev. 02 — 24 February 2009 HF / VHF power LDMOS transistor C12 C17 C13 C20 L11 C14 C18 C21 L12 C15 C22 C19 C16 + R4 L4 © NXP B.V. 2009. All rights reserved. ...
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... NXP Semiconductors 7.2 Reliability Years (1) T (2) T (3) T (4) T (5) T (6) T (7) T (8) T (9) T (10) T (11) T Fig 8. BLF574_2 Product data sheet 5 10 (1) (2) (3) (4) (5) ( (7) (8) (9) (10) (11 TTF (0.1 % failure fraction). = 100 110 120 130 140 150 160 170 180 190 C ...
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... NXP Semiconductors 8. Test information 8.1 Impedance information Table 9. Simulated Z f MHz 225 Fig 9. BLF574_2 Product data sheet Typical impedance and Z test circuit impedances 3.2 + j2.5 gate Z S Definition of transistor impedance Rev. 02 — 24 February 2009 BLF574 HF / VHF power LDMOS transistor Z L 7.5 + j4.0 ...
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... NXP Semiconductors 8.2 RF performance The following figures are measured in a class-AB production test circuit. 8.2.1 1-Tone (dB 100 200 300 1000 mA 225 MHz Fig 10. Power gain and drain efficiency as functions of load power; typical values BLF574_2 Product data sheet 001aaj134 (%) (dB 400 500 P (W) ...
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... NXP Semiconductors (1) P Fig 12. Load power as function of source power; typical values 8.2.2 2-Tone (dB 100 200 300 1000 mA 225.05 MHz. 2 Fig 13. Power gain and drain efficiency as functions of peak envelope load power; typical values BLF574_2 Product data sheet (dBm 1000 mA 225 MHz 56.43 dBm (440 W) ...
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... NXP Semiconductors 8.2.3 Test circuit Table 10. For production test circuit, see Printed-Circuit Board (PCB): Rogers 5880; metallization); thickness copper plating = 35 m. Component Description C1, C2, C20, C21 C3 C4, C5 C6, C7, C10, C11 C8, C9 C12, C13 C14, C15 C16 C17 C18, C19 C22 C23, C24 ...
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... NXP Semiconductors input Fig 15. Class-AB common-source production test circuit Fig 16. Component layout for class-AB production test circuit BLF574_2 Product data sheet V DD C12 C11 L10 C10 C13 C11 C10 C9 Rev. 02 — 24 February 2009 HF / VHF power LDMOS transistor C14 C18 C23 C22 ...
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... NXP Semiconductors 9. Package outline Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions UNIT 5.33 11.81 31.55 0.15 mm 3.96 11.56 30.94 0.08 0.210 0.465 0.006 1.242 inches 0.156 0.455 0.003 1.218 OUTLINE ...
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... NXP Semiconductors 10. Abbreviations Table 11. Acronym CW EDGE GSM HF LDMOS LDMOST RF TTF VHF VSWR 11. Revision history Table 12. Revision history Document ID BLF574_2 Modifications: BLF574_1 BLF574_2 Product data sheet Abbreviations Description Continuous Wave Enhanced Data rates for GSM Evolution Global System for Mobile communications ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors 14. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.1 Ruggedness in class-AB operation Application information 7.1 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 5 7.1.1 1-Tone 7.1.2 2-Tone 7.1.3 Application circuit . . . . . . . . . . . . . . . . . . . . . . . 7 7.2 Reliability ...