BLF574,112 NXP Semiconductors, BLF574,112 Datasheet

TRANSISTOR RF LDMOS SOT539A

BLF574,112

Manufacturer Part Number
BLF574,112
Description
TRANSISTOR RF LDMOS SOT539A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF574,112

Package / Case
SOT539A
Transistor Type
LDMOS
Frequency
225MHz
Gain
26.5dB
Voltage - Rated
110V
Current Rating
56A
Current - Test
1A
Voltage - Test
50V
Power - Output
400W
Forward Transconductance Gfs (max / Min)
17 S
Mounting Style
SMD/SMT
Resistance Drain-source Rds (on)
0.14 Ohms
Drain-source Breakdown Voltage
110 V
Gate-source Breakdown Voltage
11 V
Continuous Drain Current
56 A
Power Dissipation
500 W
Application
HF/VHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
110V
Output Power (max)
600W
Power Gain (typ)@vds
26.5@50VdB
Frequency (max)
500MHz
Package Type
LDMOST
Pin Count
5
Forward Transconductance (typ)
17S
Drain Source Resistance (max)
90(Typ)@6Vmohm
Input Capacitance (typ)@vds
300@50VpF
Output Capacitance (typ)@vds
72@50VpF
Reverse Capacitance (typ)
1.5@50VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
70%
Mounting
Screw
Mode Of Operation
CW
Number Of Elements
2
Vswr (max)
13
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-4736
934061965112
1. Product profile
CAUTION
1.1 General description
1.2 Features
1.3 Applications
A 500 W to 600 W LDMOS power transistor for broadcast applications and industrial
applications in the HF to 500 MHz band.
Table 1.
I
I
I
I
I
I
I
I
I
I
Mode of operation
CW
BLF574
HF / VHF power LDMOS transistor
Rev. 02 — 24 February 2009
Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an I
of 1000 mA:
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (10 MHz to 500 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
Industrial, scientific and medical applications
Broadcast transmitter applications
N
N
N
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Average output power = 500 W
Power gain = 26.5 dB
Efficiency = 70 %
Application information
f
(MHz)
225
108
V
(V)
50
50
DS
P
(W)
500
600
L
Product data sheet
G
(dB)
26.5
27.5
p
(%)
70
73
D
Dq

Related parts for BLF574,112

BLF574,112 Summary of contents

Page 1

BLF574 HF / VHF power LDMOS transistor Rev. 02 — 24 February 2009 1. Product profile 1.1 General description A 500 W to 600 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin [1] Connected to flange. 3. Ordering information Table 3. Type number BLF574 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg Thermal characteristics Table 5. Symbol R th(j-c) [1] R th(j-c) BLF574_2 Product data sheet Pinning ...

Page 3

... NXP Semiconductors 6. Characteristics Table per section unless otherwise specified. j Symbol Parameter V (BR)DSS V GS(th) V GSq I DSS I DSX I GSS DS(on iss C oss Table 7. Mode of operation: CW 225 MHz; RF performance unless otherwise specified class-AB production test circuit. case Symbol Parameter BLF574_2 Product data sheet ...

Page 4

... NXP Semiconductors Fig 1. 6.1 Ruggedness in class-AB operation The BLF574 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 400 225 MHz. L BLF574_2 Product data sheet 500 C oss (pF) 400 300 200 100 MHz. GS Output capacitance as a function of drain-source voltage; typical values per section Rev. 02 — ...

Page 5

... NXP Semiconductors 7. Application information 7.1 RF performance RF performance in a 500 W application circuit at 225 MHz. 7.1.1 1-Tone (dB 200 1000 mA 225 MHz Fig 2. Power gain and drain efficiency as functions of load power; typical values BLF574_2 Product data sheet 001aaj127 (%) (dB 400 600 P (W) L(PEP) Fig 3. Rev. 02 — 24 February 2009 ...

Page 6

... NXP Semiconductors (1) P Fig 4. 7.1.2 2-Tone (dB 200 400 1000 mA 225.05 MHz. 2 Fig 5. Power gain and drain efficiency as functions of peak envelope load power; typical values BLF574_2 Product data sheet (dBm 1000 mA 225 MHz 57.32 dBm (540 W) L(1dB) Load power as function of source power; typical values ...

Page 7

... NXP Semiconductors 7.1.3 Application circuit Table 8. For application circuit, see Printed-Circuit Board (PCB): Rogers 5880; metallization); thickness copper plating = 35 m. Component Description C1, C2, C23, C24 C3 C4, C5 C6, C9 C7, C8, C10, C11 C12, C16 C13, C15 C14 C17, C19 C18 C20, C22 C21 ...

Page 8

... NXP Semiconductors Fig 7. Component layout for class-AB application circuit BLF574_2 Product data sheet C10 L10 C11 Rev. 02 — 24 February 2009 HF / VHF power LDMOS transistor C12 C17 C13 C20 L11 C14 C18 C21 L12 C15 C22 C19 C16 + R4 L4 © NXP B.V. 2009. All rights reserved. ...

Page 9

... NXP Semiconductors 7.2 Reliability Years (1) T (2) T (3) T (4) T (5) T (6) T (7) T (8) T (9) T (10) T (11) T Fig 8. BLF574_2 Product data sheet 5 10 (1) (2) (3) (4) (5) ( (7) (8) (9) (10) (11 TTF (0.1 % failure fraction). = 100 110 120 130 140 150 160 170 180 190 C ...

Page 10

... NXP Semiconductors 8. Test information 8.1 Impedance information Table 9. Simulated Z f MHz 225 Fig 9. BLF574_2 Product data sheet Typical impedance and Z test circuit impedances 3.2 + j2.5 gate Z S Definition of transistor impedance Rev. 02 — 24 February 2009 BLF574 HF / VHF power LDMOS transistor Z L 7.5 + j4.0 ...

Page 11

... NXP Semiconductors 8.2 RF performance The following figures are measured in a class-AB production test circuit. 8.2.1 1-Tone (dB 100 200 300 1000 mA 225 MHz Fig 10. Power gain and drain efficiency as functions of load power; typical values BLF574_2 Product data sheet 001aaj134 (%) (dB 400 500 P (W) ...

Page 12

... NXP Semiconductors (1) P Fig 12. Load power as function of source power; typical values 8.2.2 2-Tone (dB 100 200 300 1000 mA 225.05 MHz. 2 Fig 13. Power gain and drain efficiency as functions of peak envelope load power; typical values BLF574_2 Product data sheet (dBm 1000 mA 225 MHz 56.43 dBm (440 W) ...

Page 13

... NXP Semiconductors 8.2.3 Test circuit Table 10. For production test circuit, see Printed-Circuit Board (PCB): Rogers 5880; metallization); thickness copper plating = 35 m. Component Description C1, C2, C20, C21 C3 C4, C5 C6, C7, C10, C11 C8, C9 C12, C13 C14, C15 C16 C17 C18, C19 C22 C23, C24 ...

Page 14

... NXP Semiconductors input Fig 15. Class-AB common-source production test circuit Fig 16. Component layout for class-AB production test circuit BLF574_2 Product data sheet V DD C12 C11 L10 C10 C13 C11 C10 C9 Rev. 02 — 24 February 2009 HF / VHF power LDMOS transistor C14 C18 C23 C22 ...

Page 15

... NXP Semiconductors 9. Package outline Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions UNIT 5.33 11.81 31.55 0.15 mm 3.96 11.56 30.94 0.08 0.210 0.465 0.006 1.242 inches 0.156 0.455 0.003 1.218 OUTLINE ...

Page 16

... NXP Semiconductors 10. Abbreviations Table 11. Acronym CW EDGE GSM HF LDMOS LDMOST RF TTF VHF VSWR 11. Revision history Table 12. Revision history Document ID BLF574_2 Modifications: BLF574_1 BLF574_2 Product data sheet Abbreviations Description Continuous Wave Enhanced Data rates for GSM Evolution Global System for Mobile communications ...

Page 17

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 18

... NXP Semiconductors 14. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.1 Ruggedness in class-AB operation Application information 7.1 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 5 7.1.1 1-Tone 7.1.2 2-Tone 7.1.3 Application circuit . . . . . . . . . . . . . . . . . . . . . . . 7 7.2 Reliability ...

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