BLF248,112 NXP Semiconductors, BLF248,112 Datasheet

TRANSISTOR RF DMOS SOT262A1

BLF248,112

Manufacturer Part Number
BLF248,112
Description
TRANSISTOR RF DMOS SOT262A1
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF248,112

Package / Case
SOT-262A1
Transistor Type
2 N-Channel (Dual)
Frequency
225MHz
Gain
11.5dB
Voltage - Rated
65V
Current Rating
25A
Voltage - Test
28V
Power - Output
300W
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
RF MOSFET Power
Resistance Drain-source Rds (on)
0.15 Ohms
Transistor Polarity
N-Channel
Configuration
Dual Common Source
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
25 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Current - Test
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-2389
934006630112
BLF248
BLF248
Product specification
Supersedes data of 1997 Dec 17
DATA SHEET
BLF248
VHF push-pull power MOS
transistor
M3D091
DISCRETE SEMICONDUCTORS
2003 Sep 02

Related parts for BLF248,112

BLF248,112 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLF248 VHF push-pull power MOS transistor Product specification Supersedes data of 1997 Dec 17 2003 Sep 02 ...

Page 2

Philips Semiconductors VHF push-pull power MOS transistor FEATURES High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for large signal amplifier applications in the ...

Page 3

Philips Semiconductors VHF push-pull power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). Per transistor section unless otherwise specified. SYMBOL PARAMETER V drain-source voltage DS V gate-source voltage GS I drain current (DC ...

Page 4

Philips Semiconductors VHF push-pull power MOS transistor CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER Per section V drain-source breakdown voltage (BR)DSS I drain-source leakage current DSS I gate-source leakage current GSS V gate-source threshold voltage GSth ...

Page 5

Philips Semiconductors VHF push-pull power MOS transistor 0 handbook, halfpage T.C. (mV/ Fig.4 Temperature coefficient of gate-source voltage as a function of drain current; typical values per ...

Page 6

Philips Semiconductors VHF push-pull power MOS transistor 600 handbook, halfpage C rs (pF) 400 200 MHz. GS Fig.8 Feedback capacitance as a function of drain-source voltage; typical values per section. ...

Page 7

Philips Semiconductors VHF push-pull power MOS transistor 20 handbook, halfpage G p (dB 100 200 Class-AB operation 536 (per section); Z ...

Page 8

Acrobat reader. white to force landscape pages to be ... input IC1 R9 ...

Page 9

Philips Semiconductors VHF push-pull power MOS transistor List of components class-AB test circuit; (see Figs 11 and 12) COMPONENT DESCRIPTION C1, C2 multilayer ceramic chip capacitor; note 1 C3 film dielectric trimmer C4 multilayer ceramic chip capacitor; note 1 C5 ...

Page 10

Philips Semiconductors VHF push-pull power MOS transistor COMPONENT DESCRIPTION R3, R4 0.4 W metal film resistor R7 metal film resistor metal film resistor IC1 78L05 voltage regulator Notes 1. American Technical Ceramics (ATC) capacitor, ...

Page 11

Philips Semiconductors VHF push-pull power MOS transistor handbook, full pagewidth 119 R9 V DD1 L1 L2 hollow rivets L3 Dimensions in mm. The circuit and components are situated on one side of the printed circuit board, the other side being ...

Page 12

Philips Semiconductors VHF push-pull power MOS transistor 5 handbook, halfpage 100 150 Class-AB operation ...

Page 13

Philips Semiconductors VHF push-pull power MOS transistor BLF248 scattering parameters 250 mA; note (MHz 0.85 158.7 10 0.85 168.6 20 0.85 173.2 30 0.86 ...

Page 14

Philips Semiconductors VHF push-pull power MOS transistor PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 5.77 5.85 ...

Page 15

Philips Semiconductors VHF push-pull power MOS transistor DATA SHEET STATUS DATA SHEET PRODUCT LEVEL (1) STATUS STATUS I Objective data Development II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before ...

Page 16

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited ...

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