BLF368,112 NXP Semiconductors, BLF368,112 Datasheet

TRANSISTOR RF DMOS SOT262A1

BLF368,112

Manufacturer Part Number
BLF368,112
Description
TRANSISTOR RF DMOS SOT262A1
Manufacturer
NXP Semiconductors
Datasheet
1.BLF368112.pdf (18 pages)

Specifications of BLF368,112

Package / Case
SOT-262A1
Transistor Type
2 N-Channel (Dual)
Frequency
225MHz
Gain
13.5dB
Voltage - Rated
65V
Current Rating
25A
Current - Test
250mA
Voltage - Test
32V
Power - Output
300W
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
MOSFET Power
Resistance Drain-source Rds (on)
0.15 Ohms
Transistor Polarity
N-Channel
Configuration
Dual Common Source
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
25 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 200 C
Application
VHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
300W
Power Gain (typ)@vds
15@28VdB
Frequency (max)
225MHz
Package Type
CDFM
Pin Count
5
Forward Transconductance (typ)
7.5S
Drain Source Resistance (max)
150@10Vmohm
Input Capacitance (typ)@vds
495@32VpF
Output Capacitance (typ)@vds
340@32VpF
Reverse Capacitance (typ)
40@32VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
70%
Mounting
Screw
Mode Of Operation
CW Class-AB
Number Of Elements
2
Power Dissipation (max)
500000mW
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
568-2390
933978490112
BLF368
BLF368
Product specification
Supersedes data of 1998 Jul 29
DATA SHEET
BLF368
VHF push-pull power MOS
transistor
M3D091
DISCRETE SEMICONDUCTORS
2003 Sep 26

Related parts for BLF368,112

Image
Part Number
Description
Manufacturer
Datasheet
Request R
BLF368
Part Number:
BLF368
Description:
RF MOSFET Power BULK TNS-RFUH
Manufacturer:
NXP Semiconductors
Datasheet:
BLF368112.pdf (18 pages)
LPC2420_60
Part Number:
LPC2420_60
Description:
NXP Semiconductors designed the LPC2420/2460 microcontroller around a 16-bit/32-bitARM7TDMI-S CPU core with real-time debug interfaces that include both JTAG andembedded trace
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2420_60.pdf (86 pages)
LPC2458
Part Number:
LPC2458
Description:
NXP Semiconductors designed the LPC2458 microcontroller around a 16-bit/32-bitARM7TDMI-S CPU core with real-time debug interfaces that include both JTAG andembedded trace
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2458.pdf (80 pages)
LPC2468
Part Number:
LPC2468
Description:
NXP Semiconductors designed the LPC2468 microcontroller around a 16-bit/32-bitARM7TDMI-S CPU core with real-time debug interfaces that include both JTAG andembedded trace
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2468.pdf (85 pages)
LPC2470
Part Number:
LPC2470
Description:
NXP Semiconductors designed the LPC2470 microcontroller, powered by theARM7TDMI-S core, to be a highly integrated microcontroller for a wide range ofapplications that require advanced communications and high quality graphic displays
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2470.pdf (91 pages)
LPC2478
Part Number:
LPC2478
Description:
NXP Semiconductors designed the LPC2478 microcontroller, powered by theARM7TDMI-S core, to be a highly integrated microcontroller for a wide range ofapplications that require advanced communications and high quality graphic displays
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2478.pdf (93 pages)
XA-G30
Part Number:
XA-G30
Description:
The Philips Semiconductors XA (eXtended Architecture) family of 16-bit single-chip microcontrollers is powerful enough to easily handle the requirements of high performance embedded applications, yet inexpensive enough to compete in the market for hi
Manufacturer:
NXP Semiconductors
Datasheet:
XA-G30.pdf (36 pages)
XA-G37
Part Number:
XA-G37
Description:
The Philips Semiconductors XA (eXtended Architecture) family of 16-bit single-chip microcontrollers is powerful enough to easily handle the requirements of high performance embedded applications, yet inexpensive enough to compete in the market for hi
Manufacturer:
NXP Semiconductors
Datasheet:
XA-G37.pdf (37 pages)
XA-S3
Part Number:
XA-S3
Description:
The XA-S3 device is a member of Philips Semiconductors? XA(eXtended Architecture) family of high performance 16-bitsingle-chip microcontrollers
Manufacturer:
NXP Semiconductors
Datasheet:
XA-S3.pdf (52 pages)
LH75401_LH75411_N
Part Number:
LH75401_LH75411_N
Description:
The NXP BlueStreak LH75401/LH75411 family consists of two low-cost 16/32-bit System-on-Chip (SoC) devices
Manufacturer:
NXP Semiconductors
Datasheet:
LH75401_LH75411_N.pdf (63 pages)
LPC3130_3131
Part Number:
LPC3130_3131
Description:
The NXP LPC3130/3131 combine an 180 MHz ARM926EJ-S CPU core, high-speed USB2
Manufacturer:
NXP Semiconductors
Datasheet:
LPC3130_3131.pdf (68 pages)
LPC3141FET180
Part Number:
LPC3141FET180
Description:
The NXP LPC3141 combine a 270 MHz ARM926EJ-S CPU core, High-speed USB 2
Manufacturer:
NXP Semiconductors
LPC3143FET180
Part Number:
LPC3143FET180
Description:
The NXP LPC3143 combine a 270 MHz ARM926EJ-S CPU core, High-speed USB 2
Manufacturer:
NXP Semiconductors
LPC3152FET208
Part Number:
LPC3152FET208
Description:
The NXP LPC3152 combines an 180 MHz ARM926EJ-S CPU core, High-speed USB 2
Manufacturer:
NXP Semiconductors
LPC3154FET208
Part Number:
LPC3154FET208
Description:
The NXP LPC3154 combines an 180 MHz ARM926EJ-S CPU core, High-speed USB 2
Manufacturer:
NXP Semiconductors

BLF368,112 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLF368 VHF push-pull power MOS transistor Product specification Supersedes data of 1998 Jul 29 2003 Sep 26 ...

Page 2

Philips Semiconductors VHF push-pull power MOS transistor FEATURES High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applications in the VHF ...

Page 3

Philips Semiconductors VHF push-pull power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER Per transistor section unless otherwise specified V drain-source voltage DS V gate-source voltage GS I drain current (DC) D ...

Page 4

Philips Semiconductors VHF push-pull power MOS transistor CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETERS Per transistor section V drain-source breakdown voltage (BR)DSS I drain-source leakage current DSS I gate-source leakage current GSS V gate-source threshold voltage ...

Page 5

Philips Semiconductors VHF push-pull power MOS transistor 0 handbook, halfpage T.C. (mV/ Fig.4 Temperature coefficient of gate-source voltage as a function of drain current; typical values per ...

Page 6

Philips Semiconductors VHF push-pull power MOS transistor 600 handbook, halfpage C rs (pF) 400 200 MHz. GS Fig.8 Feedback capacitance as a function of drain-source voltage; typical values per section. ...

Page 7

Philips Semiconductors VHF push-pull power MOS transistor 20 handbook, halfpage G p (dB 100 200 300 Class-AB operation 1.34 j0.34 (per section ...

Page 8

Acrobat reader. white to force landscape pages to be ... input IC1 R9 ...

Page 9

Philips Semiconductors VHF push-pull power MOS transistor List of components class-AB test circuit (see Figs 12 and 13) COMPONENT C1, C2 multilayer ceramic chip capacitor; note 1 C3 film dielectric trimmer C4 multilayer ceramic chip capacitor; note 1 C5 film ...

Page 10

Philips Semiconductors VHF push-pull power MOS transistor COMPONENT R7, R8 metal film resistor R9 metal film resistor IC1 voltage regulator 78L05 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines ...

Page 11

Philips Semiconductors VHF push-pull power MOS transistor handbook, full pagewidth 119 V DD1 L1 L2 hollow rivets L3 The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized, to serve ...

Page 12

Philips Semiconductors VHF push-pull power MOS transistor 2 handbook, halfpage 150 200 Class-AB operation 536 (per section); ...

Page 13

Philips Semiconductors VHF push-pull power MOS transistor BLF368 scattering parameters 250 mA; note (MHz 0.86 159.2 10 0.86 168.9 20 0.86 173.4 30 0.86 ...

Page 14

Philips Semiconductors VHF push-pull power MOS transistor BLF368 scattering parameters 250 mA; note (MHz 0.86 157.9 10 0.86 168.3 20 0.86 173.1 30 0.86 ...

Page 15

Philips Semiconductors VHF push-pull power MOS transistor BLF368 scattering parameters 250 mA; note (MHz 0.86 156.9 10 0.86 167.8 20 0.86 172.9 30 0.86 ...

Page 16

Philips Semiconductors VHF push-pull power MOS transistor PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions UNIT 5.85 5.77 ...

Page 17

Philips Semiconductors VHF push-pull power MOS transistor DATA SHEET STATUS DATA SHEET PRODUCT LEVEL (1) STATUS STATUS I Objective data Development II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before ...

Page 18

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited ...

Related keywords