BLF578,112 NXP Semiconductors, BLF578,112 Datasheet

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BLF578,112

Manufacturer Part Number
BLF578,112
Description
TRANSISTOR PWR LDMOS SOT539A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF578,112

Transistor Type
LDMOS
Frequency
108MHz
Gain
26dB
Voltage - Rated
110V
Current Rating
88A
Current - Test
40mA
Voltage - Test
50V
Power - Output
1000W
Package / Case
SOT539A
Application
HF
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
88A
Drain Source Voltage (max)
110V
Output Power (max)
1200W
Power Gain (typ)@vds
26@50V/24@50VdB
Frequency (max)
225MHz
Package Type
LDMOST
Pin Count
5
Drain Source Resistance (max)
70(Typ)@6Vmohm
Input Capacitance (typ)@vds
403@50VpF
Output Capacitance (typ)@vds
138@50VpF
Reverse Capacitance (typ)
3@50VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
71%
Mounting
Screw
Mode Of Operation
CW/Pulsed RF
Number Of Elements
2
Vswr (max)
13
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
568-5103-5
934063155112
BLF578,112

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Part Number:
BLF578,112
Quantity:
1 400
1. Product profile
CAUTION
1.1 General description
1.2 Features
1.3 Applications
A 1200 W LDMOS power transistor for broadcast applications and industrial applications
in the HF to 500 MHz band.
Table 1.
Mode of operation
CW
pulsed RF
BLF578
Power LDMOS transistor
Rev. 02 — 4 February 2010
Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an
I
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (10 MHz to 500 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
Industrial, scientific and medical applications
Broadcast transmitter applications
Dq
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
of 40 mA, a t
Output power = 1200 W
Power gain = 24 dB
Efficiency = 71 %
Application information
p
of 100 μs with δ of 20 %:
f
(MHz)
108
225
V
(V)
50
50
DS
P
(W)
1000
1200
L
Product data sheet
G
(dB)
26
24
p
η
(%)
75
71
D

Related parts for BLF578,112

BLF578,112 Summary of contents

Page 1

BLF578 Power LDMOS transistor Rev. 02 — 4 February 2010 1. Product profile 1.1 General description A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Table 1. Mode of operation ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin [1] Connected to flange. 3. Ordering information Table 3. Type number BLF578 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLF578_2 Product data sheet Pinning Description drain1 drain2 gate1 gate2 source ...

Page 3

... NXP Semiconductors 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter R thermal resistance from junction to case th(j-c) Z transient thermal impedance from junction to case th(j-c) [ the junction temperature measured under RF conditions. th(j-c) [3] See Figure 1. 0.18 Z th(j-c) (7) (K/W) 0.12 (6) 0.06 (5) (4) 0 −7 − (1) δ (2) δ (3) δ ...

Page 4

... NXP Semiconductors Table 6. ° Symbol Parameter I DSX I GSS R DS(on iss C oss Table 7. Mode of operation: pulsed RF mA Symbol Parameter η D Fig 2. 6.1 Ruggedness in class-AB operation The BLF578 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V pulsed 225 MHz. ...

Page 5

... NXP Semiconductors 7. Application information 7.1 Reliability Years (1) T (2) T (3) T (4) T (5) T (6) T (7) T (8) T (9) T (10) T (11) T Fig 3. BLF578_2 Product data sheet (7) (8) (9) (10) (11 TTF (0.1 % failure fraction). The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) × 1/ δ. = 100 ° 110 ° ...

Page 6

... NXP Semiconductors 8. Test information 8.1 Impedance information Table 8. Simulated Z f MHz 225 Fig 4. 8.2 RF performance The following figures are measured in a class-AB production test circuit. 8.2.1 1-Tone CW pulsed (dB η 100 400 700 mA 225 MHz δ Fig 5. Power gain and drain efficiency as function of load power ...

Page 7

... NXP Semiconductors (dB) 24 (4) (3) (2) ( 100 400 700 225 MHz ( ( ( ( 160 mA Dq Fig 7. Power gain as a function of load power; typical values (dB (3) (2) 20 (1) 18 100 400 700 mA 225 MHz ( ( ( ( ( Fig 9. Power gain as a function of load power; typical values BLF578_2 Product data sheet ...

Page 8

... NXP Semiconductors 8.3 Test circuit input C7 50 Ω See Table 9 for a list of components. Fig 11. Class-AB common-source production test circuit See Table 9 for a list of components. Fig 12. Component layout for class-AB production test circuit BLF578_2 Product data sheet C11 C10 C12 C11 R3 C10 ...

Page 9

... NXP Semiconductors Table 9. List of components For production test circuit, see Figure 11 Printed-Circuit Board (PCB): Rogers 5880; μ thickness copper plating = 35 m. Component Description C1, C2, C11, C12 multilayer ceramic chip capacitor C2, C3, C27, C28 multilayer ceramic chip capacitor C5, C7, C8, C21, C22 multilayer ceramic chip capacitor ...

Page 10

... NXP Semiconductors 9. Package outline Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions UNIT 4.7 11.81 31.55 31.52 0.18 mm 4.2 11.56 30.94 30.96 0.10 0.465 0.185 0.007 1.242 1.241 inches 0.165 0.455 ...

Page 11

... NXP Semiconductors 10. Abbreviations Table 10. Acronym CW EDGE GSM HF LDMOS LDMOST RF TTF VSWR 11. Revision history Table 11. Revision history Document ID BLF578_2 Modifications: BLF578_1 BLF578_2 Product data sheet Abbreviations Description Continuous Wave Enhanced Data rates for GSM Evolution Global System for Mobile communications High Frequency ...

Page 12

... Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 13

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 14

... NXP Semiconductors 14. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.1 Ruggedness in class-AB operation . . . . . . . . . 4 7 Application information 7.1 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 8.1 Impedance information . . . . . . . . . . . . . . . . . . . 6 8.2 RF performance ...

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