PD55035S-E STMicroelectronics, PD55035S-E Datasheet

TRANS RF N-CH FET LDMOST PWRSO10

PD55035S-E

Manufacturer Part Number
PD55035S-E
Description
TRANS RF N-CH FET LDMOST PWRSO10
Manufacturer
STMicroelectronics
Datasheet

Specifications of PD55035S-E

Transistor Type
LDMOS
Frequency
500MHz
Gain
16.9dB
Voltage - Rated
40V
Current Rating
7A
Current - Test
200mA
Voltage - Test
12.5V
Power - Output
35W
Package / Case
PowerSO-10 Exposed Bottom Pad
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
7A
Drain Source Voltage (max)
40V
Output Power (max)
35W(Min)
Power Gain (typ)@vds
16.9dB
Frequency (max)
1GHz
Package Type
PowerSO-10RF (Straight lead)
Pin Count
4
Forward Transconductance (typ)
2.5(Min)S
Input Capacitance (typ)@vds
92@12.5VpF
Output Capacitance (typ)@vds
73@12.5VpF
Reverse Capacitance (typ)
6.1@12.5VpF
Operating Temp Range
-65C to 165C
Drain Efficiency (typ)
62%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
95000mW
Vswr (max)
20(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
497-5303-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PD55035S-E
Manufacturer:
IR
Quantity:
22 150
Part Number:
PD55035S-E
Manufacturer:
ST
Quantity:
20 000
Features
Description
The device is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It
operates at 12 V in common source mode at
frequencies of up to 1 GHz. The device boasts the
excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in the first
true SMD plastic RF power package, PowerSO-
10RF. Device’s superior linearity performance
makes it an ideal solution for car mobile radio.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note
AN1294).
Table 1.
May 2010
Excellent thermal stability
Common source configuration
P
12.5 V
New RF plastic package
OUT
= 35 W with 16.9dB gain @ 500 MHz /
PD55035STR-E
PD55035TR-E
PD55035S-E
Order code
PD55035-E
Device summary
N-channel enhancement-mode, lateral MOSFETs
RF POWER transistor, LdmoST plastic family
PowerSO-10RF (straight lead)
PowerSO-10RF (straight lead)
PowerSO-10RF (formed lead)
PowerSO-10RF (formed lead)
Doc ID 12331 Rev 2
Package
Figure 1.
Gate
Pin connection
PowerSO-10RF
PowerSO-10RF
(formed lead)
(straight lead)
PD55035S-E
Tape and reel
Tape and reel
PD55035-E
Packing
Tube
Tube
Source
Drain
www.st.com
1/22
22

Related parts for PD55035S-E

PD55035S-E Summary of contents

Page 1

... May 2010 RF POWER transistor, LdmoST plastic family Figure 1. Gate Package PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) Doc ID 12331 Rev 2 PD55035-E PD55035S-E PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) Pin connection Source Drain Packing Tube Tube Tape and reel Tape and reel www ...

Page 2

... Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.3 Moisture sensitivity level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 6 Typical performance 175 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 7 Common source s-parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 2/22 Doc ID 12331 Rev 2 PD55035-E, PD55035S-E ...

Page 3

... PD55035-E, PD55035S-E 1 Electrical data 1.1 Maximum ratings Table 2. Absolute maximum ratings (T Symbol V (BR)DSS DISS STG 1.2 Thermal data Table 3. Thermal data Symbol R thJC CASE Parameter Drain-source voltage Gate-source voltage Drain current Power dissipation (@ T = 70°C) C Max. operating junction temperature Storage temperature ...

Page 4

... MHz DS Test conditions = 200 500 MHz DQ = 200 mA 500 MHz DQ OUT = 200 mA 500 MHz DQ OUT = 200 mA 500 MHz DQ OUT Test methodology J-STD-020B Doc ID 12331 Rev 2 PD55035-E, PD55035S-E Min. Typ. Max. Unit 1 µA 1 µA 2.0 5.0 V 0.8 0.95 V 2.5 mho 6.1 pF Min. ...

Page 5

... PD55035-E, PD55035S-E 3 Impedance Figure 2. Current conventions Table 7. Impedance data Freq. (MHz) 175 480 500 520 Z (Ω 5.84 0. 1.08 0. 1.21 0. 1.20 Doc ID 12331 Rev 2 Impedance Z (Ω 1.45 0. 0.25 1. 0.03 1. 0.15 5/22 ...

Page 6

... Vdd (V) Figure 5. Gate-source voltage vs case temperature 1.02 1.01 1 0.99 0.98 0.97 - (°C ) 6/22 Figure Figure 100 0 Doc ID 12331 Rev 2 PD55035-E, PD55035S-E Drain current vs gate source voltage Vds = Vgs (V) Output power vs input power 52 0 MHz MHz Vdd =1 2.5 V Idq = 0. .25 Pin ( 1.5 ...

Page 7

... PD55035-E, PD55035S-E Figure 7. Power gain vs output power 520 MHz 18 480, 500 MHz Pout (W ) Figure 9. Input return loss vs output power 0 Vdd =12.5 V Idq = 200 -10 -15 -20 -25 480 MHz - Pout (W ) Figure Vdd = 12.5 V Idq = 200 Figure 10. Output power vs bias current 520 MHz 500 MHz ...

Page 8

... Figure 14. Output power vs gate voltage 45 520 MHz 40 480 MHz 35 500 MHz Idq = 200 m A Pin = 0. Doc ID 12331 Rev 2 PD55035-E, PD55035S-E 520 MHz 500 MHz Idq = 200 m A Pin = 0. Vdd (V) Vdd = 12.5 V Pin = 0.72 W 0.5 1 1.5 2 2.5 3 Vgs (V) 480 MHz 16 18 ...

Page 9

... PD55035-E, PD55035S-E 5 Test circuit Figure 15. 500 MHz test circuit schematic (engineering) Table 8. Test circuit component part list Component B1,B2 C1,C13 C2,C3,C4,C12,C13,C14 C6 C7, C19 C10, C16 C9, C17 C8, C18 C5, C11 L1 N1 Z4, Board Ferrite bead 300 pF, 100 mil chip capacitor trimmer capacitor 39 pF ATC 100B surface mount ceramic chip capacitor 120 pF 100 mil chip capacitor 10 µ ...

Page 10

... Vdd = 12.5 V Idq = 200 175 MHz 0 0.8 1 1.2 0 Figure 19. Input return loss vs output power 0 -5 -10 -15 -20 Vdd = 12.5 V Idq = 200 175 MHz - Doc ID 12331 Rev 2 PD55035-E, PD55035S-E Vdd = 12.5 V Idq = 200 175 MHz Pout (W ) Vdd = 12.5 V Idq = 200 175 MHz Pout ( ...

Page 11

... PD55035-E, PD55035S-E Figure 20. 175 MHz test circuit schematic (engineering) Table 9. 175 MHz test circuit component part list Component C1,C6 C2,C5 C3, C4 C7, C8 C9, C16 C10 C11 C12 C13 C14 C15 FB1, FB2 Board 10 µF electrolytic capacitor 0.1 µF chip capacitor 0.01 µF chip capacitor ...

Page 12

... Common source s-parameter 7 Common source s-parameter Table 10. S-parameter for PD55035S-E (V Freq < Φ (MHz) 50 0.823 -162 100 0.855 -169 150 0.875 -172 200 0.891 -173 250 0.902 -174 300 0.918 -175 350 0.924 -176 400 0.934 -176 450 0.940 -177 500 0.949 ...

Page 13

... PD55035-E, PD55035S-E Table 11. S-parameter PD55035-E (V Freq < Φ (MHz) 50 0.845 -165 100 0.877 -171 150 0.894 -174 200 0.905 -175 250 0.909 -176 300 0.920 -176 350 0.924 -177 400 0.933 -177 450 0.937 -178 500 0.946 -178 550 0.951 -179 600 ...

Page 14

... Doc ID 12331 Rev 2 PD55035-E, PD55035S-E < Φ < Φ 0.841 -173 -5 0.848 -176 -9 0.853 -176 -11 0.860 -176 -12 0.872 -177 -15 0.880 -177 -18 0.889 -177 -20 0 ...

Page 15

... PD55035-E, PD55035S-E Table 13. S-parameter for PD55035S-E (V Freq < Φ (MHz) 50 0.867 -165 100 0.896 -171 150 0.913 -175 200 0.921 -176 250 0.921 -177 300 0.929 -178 350 0.930 -178 400 0.936 -178 450 0.938 -179 500 0.947 -179 550 0.950 180 600 0 ...

Page 16

... Package mechanical data 8 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK trademark. 16/22 Doc ID 12331 Rev 2 PD55035-E, PD55035S-E ® ...

Page 17

... PD55035-E, PD55035S-E Table 14. PowerSO-10RF formed lead (Gull Wing) mechanical data Dim Note: Resin protrusions not included (max value: 0.15 mm per side) Figure 21. Package dimensions mm. Min. Typ. Max. 0 0.05 0.1 3.4 3.5 3.6 1.2 1.3 1.4 0.15 0.2 0.25 0.2 5.4 5.53 5 ...

Page 18

... Doc ID 12331 Rev 2 PD55035-E, PD55035S-E Inch Min. Typ. Max. 0.064 0.065 0.068 0.134 0.137 0.142 0.046 0.05 0.054 0.005 0.007 0.009 0.007 0.212 ...

Page 19

... PD55035-E, PD55035S-E Figure 23. Tube information Doc ID 12331 Rev 2 Package mechanical data 19/22 ...

Page 20

... Package mechanical data Figure 24. Reel information 20/22 Doc ID 12331 Rev 2 PD55035-E, PD55035S-E ...

Page 21

... PD55035-E, PD55035S-E 9 Revision history Table 16. Document revision history Date 11-May-2006 26-May-2010 Revision 1 Initial release. 2 Added: Table 6: Moisture sensitivity Doc ID 12331 Rev 2 Revision history Changes level. 21/22 ...

Page 22

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 22/22 Please Read Carefully: © 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 12331 Rev 2 PD55035-E, PD55035S-E ...

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