SD56120 STMicroelectronics, SD56120 Datasheet - Page 6

• Manufacturer Part Number: SD56120
• Description: TRANSISTOR RF PWR LDMOST M246
• Manufacturer: STMicroelectronics

Specifications of SD56120

• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 16dB
• Voltage - Rated: 65V
• Current Rating: 14A
• Current - Test: 400mA
• Voltage - Test: 28V
• Power - Output: 100W
• Package / Case: M246
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 14A
• Drain Source Voltage (max): 60V
• Output Power (max): 100W
• Power Gain (typ)@vds: 16dB
• Frequency (min): 470MHz
• Frequency (max): 860MHz
• Package Type: Case M-246
• Pin Count: 5
• Forward Transconductance (typ): 3S
• Input Capacitance (typ)@vds: 82@28VpF
• Output Capacitance (typ)@vds: 48@28VpF
• Reverse Capacitance (typ): 2.8@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 60%
• Mounting: Screw
• Number Of Elements: 2
• Power Dissipation (max): 217000mW
• Vswr (max): 5(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-5474; SD56120

Typical performances
4
6/15
Figure 3.
Figure 5.
C (pF)
1000
100
Id (A)
6
5
4
3
2
0
1
10
2.5
1
0
Typical performances
Capacitance vs drain voltage
(per section)
Drain current vs gate voltage
3
10
3.5
20
Ciss
Coss
Crss
Vgs (V)
Vds (V)
4
30
4.5
40
f = 1 MHz
per section
Vds = 10 V
per section
Doc ID 6873 Rev 4
5
50
Figure 4.
Figure 6.
VGS (NORMALIZED)
1.04
1.02
0.98
0.96
Pout (W)
140
120
100
80
60
40
20
1
0
-25
0
Id = 3 A
Id = 4 A
Id = 2 A
Id = 1 A
Id = 5 A
Gate-source voltage vs case
temperature
Output power vs input power
0
1
25
Tc (°C)
Pin (W)
2
50
V
per section
DS
= 10 V
3
75
IDQ = 400 mA
f = 860 MHz
VDD = 28 V
SD56120
100
4