SD56120 STMicroelectronics, SD56120 Datasheet - Page 7

• Manufacturer Part Number: SD56120
• Description: TRANSISTOR RF PWR LDMOST M246
• Manufacturer: STMicroelectronics

Specifications of SD56120

• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 16dB
• Voltage - Rated: 65V
• Current Rating: 14A
• Current - Test: 400mA
• Voltage - Test: 28V
• Power - Output: 100W
• Package / Case: M246
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 14A
• Drain Source Voltage (max): 60V
• Output Power (max): 100W
• Power Gain (typ)@vds: 16dB
• Frequency (min): 470MHz
• Frequency (max): 860MHz
• Package Type: Case M-246
• Pin Count: 5
• Forward Transconductance (typ): 3S
• Input Capacitance (typ)@vds: 82@28VpF
• Output Capacitance (typ)@vds: 48@28VpF
• Reverse Capacitance (typ): 2.8@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 60%
• Mounting: Screw
• Number Of Elements: 2
• Power Dissipation (max): 217000mW
• Vswr (max): 5(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-5474; SD56120

SD56120
Figure 7.
Figure 9.
Gp (dB)
22
20
18
16
14
12
10
Pg (dB)
20
19
18
17
16
15
14
13
12
1
0
Idq = 400 mA
Idq = 200 mA
Idq = 800 mA
Power gain vs input power
Power gain vs output power
Idq = 1 A
1
Idq = 600 mA
10
Pout (W)
Pin (W)
2
100
3
f = 860 MHz
Vdd = 28V
Idq = 400 mA
f = 860 MHz
Vdd = 28 V
Doc ID 6873 Rev 4
1000
4
Figure 8.
Figure 10. Intermodulation distortion vs
IMD3 (dBt)
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
Nd (%)
70
60
50
40
30
20
10
0
-5
0
0
0
10
20
20
Efficiency vs output power
output power
30
40
40
Pout (WPEP)
50
60
Pout (W)
60
Typical performances
80
70
80
100
90
f2 = 860.1 MHz
f1 = 860 MHz
Idq = 400 mA
Idq = 400 mA
Vdd = 28 V
f = 860 Mhz
Vdd = 28 V
100
120
110
140
120
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