MRF6V10010NR4 Freescale Semiconductor, MRF6V10010NR4 Datasheet
MRF6V10010NR4
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MRF6V10010NR4 Summary of contents
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... Document Number: MRF6V10010N Rev. 3, 7/2010 MRF6V10010NR4 1090 MHz PULSED LATERAL N- -CHANNEL RF POWER MOSFET CASE 466- -03, STYLE 1 PLD- -1.5 PLASTIC Symbol Value Unit V --0.5, +100 Vdc DSS V --6.0, +10 Vdc +150 °C stg T 150 ° 200 °C J (1,2) Symbol Value Unit Z 1.6 °C/W θJC MRF6V10010NR4 1 ...
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... Vdc ± 30 mV(rms) MHz Input Capacitance ( Vdc Vdc ± 30 mV(rms) MHz Functional Tests (In Freescale Test Fixture, 50 ohm system) V Pulsed, 100 μsec Pulse Width, 20% Duty Cycle Power Gain Drain Efficiency Input Return Loss MRF6V10010NR4 2 Rating 3 = 25°C unless otherwise noted) A Symbol I GSS V (BR)DSS I DSS ...
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... ATC100B7R5CT500XT ATC100B3R0CT500XT C1206C104K5RACTR ATC100B0R3BT500XT ATC100B5R6CT500XT 477KXM063M ATC100B470JT500XT A03TKLC A02TKLC CRCW12063301FKEA CRCW120610R0FKEA C13 L2 OUTPUT C10 Z9 Z10 Z11 Z12 C14 C15 C11 = 2.55 r Part Number Manufacturer ATC Kemet Murata ATC ATC Kemet ATC ATC Illlinois Capacitor ATC Coilcraft Coilcraft Vishay Vishay MRF6V10010NR4 V SUPPLY RF 3 ...
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... L1 C2 C16 C1 C5 Figure 2. MRF6V10010NR4 Test Circuit Component Layout MRF6V10010NR4 C12 C15 C10 C6 MRF6V10010N Rev. 3 C13 C9 C14 C11 RF Device Data Freescale Semiconductor ...
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... INPUT POWER (dBm) PULSED in Figure 6. Pulsed Output Power versus Input Power T = --30_C C 25_C Vdc 1090 MHz Pulse Width = 100 μsec Duty Cycle = 20% 0.01 0.02 0.03 0.04 0. INPUT POWER (WATTS) PULSED in Figure 8. Pulsed Output Power versus Input Power MRF6V10010NR4 100 18 19 85_C 0.06 0.07 5 ...
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... This above graph displays calculated MTTF in hours when the device is operated at V Duty Cycle = 20%, and η MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 10. MTTF versus Junction Temperature MRF6V10010NR4 6 TYPICAL CHARACTERISTICS η --30_C C 25_C ...
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... Z source MHz Ω 1090 1.15 + j8.96 13.47 + j34. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Input Device Under Matching Network Test Z Z source load Ω load Ω Output Matching Network MRF6V10010NR4 7 ...
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... ZONE V 4 ZONE ZONE X VIEW Y--Y MRF6V10010NR4 8 PACKAGE DIMENSIONS 0.35 (0.89 NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1984 CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE S 4. SOURCE CASE 466- -03 ISSUE D PLD- -1.5 PLASTIC 0 ...
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... Corrected errors made in the translation of the printed circuit board to the schematic, Fig. 1, Test Circuit Schematic and Z list Device Data Freescale Semiconductor REVISION HISTORY Description , “2.57 -- j7.33” to “1.15 + j8.96” and Z source , “14.10 -- j34.77” to “13.47 + j34.32” in Fig. 11, load symbol, Table 2, Thermal Characteristics θJC MRF6V10010NR4 9 ...
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... For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1--800--441--2447 or +1--303--675--2140 Fax: +1--303--675--2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF6V10010NR4 Document Number: MRF6V10010N Rev. 3, 7/2010 10 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...