MRF6V10010NR4 Freescale Semiconductor, MRF6V10010NR4 Datasheet

MOSFET RF N-CHAN PLD-1.5

MRF6V10010NR4

Manufacturer Part Number
MRF6V10010NR4
Description
MOSFET RF N-CHAN PLD-1.5
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF6V10010NR4

Transistor Type
N-Channel
Frequency
1.09GHz
Gain
25dB
Voltage - Rated
100V
Current Rating
2.5mA
Current - Test
10mA
Voltage - Test
50V
Power - Output
10W
Package / Case
PLD-1.5
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
100V
Output Power (max)
2W
Power Gain (typ)@vds
25dB
Frequency (min)
960MHz
Frequency (max)
1.4GHz
Package Type
PLD-1.5
Pin Count
3
Input Capacitance (typ)@vds
9.55@50VpF
Output Capacitance (typ)@vds
3.38@50VpF
Reverse Capacitance (typ)
0.1@50VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
69%
Mounting
Surface Mount
Number Of Elements
1
Screening Level
Military
Drain Source Voltage Vds
100V
Rf Transistor Case
PLD-1.5
Filter Terminals
SMD
Output Power Pout
10W
Peak Reflow Compatible (260 C)
Yes
Transistor Polarity
N Channel
Rohs Compliant
Yes
Gate-source Voltage
10V
Leaded Process Compatible
Yes
Operating Frequency Max
1.09GHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
MRF6V10010NR4TR

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Part Number:
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© Freescale Semiconductor, Inc., 2008--2010. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for
use in pulsed applications.
• Typical Pulsed Performance: V
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Qualified Up to a Maximum of 50 V
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
• RoHS Compliant
• In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
RF Power transistor designed for applications operating at frequencies
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Peak (2 W Avg.), f = 1090 MHz, Pulse Width = 100
Operation
Case Temperature 79°C, 10 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle
Power Gain — 25 dB
Drain Efficiency — 69%
calculators by product.
Select Documentation/Application Notes -- AN1955.
Characteristic
DD
Rating
= 50 Volts, I
DD
Operation
DQ
= 10 mA, P
μ
sec, Duty Cycle = 20%
out
= 10 Watts
Symbol
Symbol
V
Z
V
T
T
DSS
T
θJC
GS
stg
Document Number: MRF6V10010N
C
J
MRF6V10010NR4
LATERAL N- -CHANNEL
1090 MHz, 10 W, 50 V
RF POWER MOSFET
CASE 466- -03, STYLE 1
-- 65 to +150
--0.5, +100
Value
--6.0, +10
Value
PULSED
PLASTIC
PLD- -1.5
150
200
1.6
(1,2)
MRF6V10010NR4
Rev. 3, 7/2010
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
1

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MRF6V10010NR4 Summary of contents

Page 1

... Document Number: MRF6V10010N Rev. 3, 7/2010 MRF6V10010NR4 1090 MHz PULSED LATERAL N- -CHANNEL RF POWER MOSFET CASE 466- -03, STYLE 1 PLD- -1.5 PLASTIC Symbol Value Unit V --0.5, +100 Vdc DSS V --6.0, +10 Vdc +150 °C stg T 150 ° 200 °C J (1,2) Symbol Value Unit Z 1.6 °C/W θJC MRF6V10010NR4 1 ...

Page 2

... Vdc ± 30 mV(rms) MHz Input Capacitance ( Vdc Vdc ± 30 mV(rms) MHz Functional Tests (In Freescale Test Fixture, 50 ohm system) V Pulsed, 100 μsec Pulse Width, 20% Duty Cycle Power Gain Drain Efficiency Input Return Loss MRF6V10010NR4 2 Rating 3 = 25°C unless otherwise noted) A Symbol I GSS V (BR)DSS I DSS ...

Page 3

... ATC100B7R5CT500XT ATC100B3R0CT500XT C1206C104K5RACTR ATC100B0R3BT500XT ATC100B5R6CT500XT 477KXM063M ATC100B470JT500XT A03TKLC A02TKLC CRCW12063301FKEA CRCW120610R0FKEA C13 L2 OUTPUT C10 Z9 Z10 Z11 Z12 C14 C15 C11 = 2.55 r Part Number Manufacturer ATC Kemet Murata ATC ATC Kemet ATC ATC Illlinois Capacitor ATC Coilcraft Coilcraft Vishay Vishay MRF6V10010NR4 V SUPPLY RF 3 ...

Page 4

... L1 C2 C16 C1 C5 Figure 2. MRF6V10010NR4 Test Circuit Component Layout MRF6V10010NR4 C12 C15 C10 C6 MRF6V10010N Rev. 3 C13 C9 C14 C11 RF Device Data Freescale Semiconductor ...

Page 5

... INPUT POWER (dBm) PULSED in Figure 6. Pulsed Output Power versus Input Power T = --30_C C 25_C Vdc 1090 MHz Pulse Width = 100 μsec Duty Cycle = 20% 0.01 0.02 0.03 0.04 0. INPUT POWER (WATTS) PULSED in Figure 8. Pulsed Output Power versus Input Power MRF6V10010NR4 100 18 19 85_C 0.06 0.07 5 ...

Page 6

... This above graph displays calculated MTTF in hours when the device is operated at V Duty Cycle = 20%, and η MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 10. MTTF versus Junction Temperature MRF6V10010NR4 6 TYPICAL CHARACTERISTICS η --30_C C 25_C ...

Page 7

... Z source MHz Ω 1090 1.15 + j8.96 13.47 + j34. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Input Device Under Matching Network Test Z Z source load Ω load Ω Output Matching Network MRF6V10010NR4 7 ...

Page 8

... ZONE V 4 ZONE ZONE X VIEW Y--Y MRF6V10010NR4 8 PACKAGE DIMENSIONS 0.35 (0.89  NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1984 CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE S 4. SOURCE CASE 466- -03 ISSUE D PLD- -1.5 PLASTIC 0 ...

Page 9

... Corrected errors made in the translation of the printed circuit board to the schematic, Fig. 1, Test Circuit Schematic and Z list Device Data Freescale Semiconductor REVISION HISTORY Description , “2.57 -- j7.33” to “1.15 + j8.96” and Z source , “14.10 -- j34.77” to “13.47 + j34.32” in Fig. 11, load symbol, Table 2, Thermal Characteristics θJC MRF6V10010NR4 9 ...

Page 10

... For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1--800--441--2447 or +1--303--675--2140 Fax: +1--303--675--2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF6V10010NR4 Document Number: MRF6V10010N Rev. 3, 7/2010 10 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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