BLF242,112 NXP Semiconductors, BLF242,112 Datasheet

TRANSISTOR RF DMOS SOT123A

BLF242,112

Manufacturer Part Number
BLF242,112
Description
TRANSISTOR RF DMOS SOT123A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF242,112

Package / Case
SOT-123A
Transistor Type
N-Channel
Frequency
175MHz
Gain
16dB
Voltage - Rated
65V
Current Rating
1A
Current - Test
10mA
Voltage - Test
28V
Power - Output
5W
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Resistance Drain-source Rds (on)
5 Ohm @ 1 V
Transistor Polarity
N-Channel
Configuration
Single Dual Source
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1 A
Power Dissipation
16000 mW
Maximum Operating Temperature
+ 200 C
Application
HF/VHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
5W
Power Gain (typ)@vds
16@28VdB
Frequency (max)
175MHz
Package Type
SOT-123A
Pin Count
4
Forward Transconductance (typ)
0.24S
Drain Source Resistance (max)
5000@1Vmohm
Input Capacitance (typ)@vds
13@28VpF
Output Capacitance (typ)@vds
9.4@28VpF
Reverse Capacitance (typ)
1.7@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
60%
Mounting
Screw
Mode Of Operation
CW Class-B
Number Of Elements
1
Power Dissipation (max)
16000mW
Vswr (max)
50
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-2396
933817030112
BLF242
BLF242
Product specification
Supersedes data of 1997 Dec 17
DATA SHEET
BLF242
HF-VHF power MOS transistor
M3D065
DISCRETE SEMICONDUCTORS
2003 Oct 13

Related parts for BLF242,112

BLF242,112 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET M3D065 BLF242 HF-VHF power MOS transistor Product specification Supersedes data of 1997 Dec 17 2003 Oct 13 ...

Page 2

Philips Semiconductors HF-VHF power MOS transistor FEATURES High power gain Low noise Easy power control Good thermal stability Withstands full load mismatch Gold metallization ensures excellent reliability. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for professional transmitter applications ...

Page 3

Philips Semiconductors HF-VHF power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V drain-source voltage DS V gate-source voltage GS I drain current (DC total power dissipation tot T storage ...

Page 4

Philips Semiconductors HF-VHF power MOS transistor CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER V drain-source breakdown voltage (BR)DSS I drain-source leakage current DSS I gate-source leakage current GSS V gate-source threshold voltage GSth g forward transconductance ...

Page 5

Philips Semiconductors HF-VHF power MOS transistor 4 handbook, halfpage T.C. (mV/ –2 –4 0 100 Fig.4 Temperature coefficient of gate-source voltage as a function of drain current, typical values. 6 handbook, halfpage R ...

Page 6

Philips Semiconductors HF-VHF power MOS transistor 6 handbook, halfpage C rs (pF MHz. GS Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. APPLICATION INFORMATION FOR CLASS-B ...

Page 7

Philips Semiconductors HF-VHF power MOS transistor 20 handbook, halfpage (dB Class-B operation mA 175 MHz. GS ...

Page 8

Philips Semiconductors HF-VHF power MOS transistor List of components (see Fig.11) COMPONENT DESCRIPTION C1, C2, C7 film dielectric trimmer C3 multilayer ceramic chip capacitor; note 1 100 pF C4, C8 ceramic chip capacitor C6 film dielectric trimmer C9 electrolytic capacitor ...

Page 9

Philips Semiconductors HF-VHF power MOS transistor handbook, full pagewidth strap C1 Dimensions in mm. The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections ...

Page 10

Philips Semiconductors HF-VHF power MOS transistor 50 handbook, halfpage 100 Class-B operation ...

Page 11

Philips Semiconductors HF-VHF power MOS transistor BLF242 scattering parameters mA; note (MHz 0.99 3.40 10 0.98 5.80 20 0.99 12.40 30 0.98 17.90 ...

Page 12

Philips Semiconductors HF-VHF power MOS transistor PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions UNIT 7.47 5.82 9.73 0.18 mm ...

Page 13

Philips Semiconductors HF-VHF power MOS transistor DATA SHEET STATUS DATA SHEET PRODUCT LEVEL (1) STATUS STATUS I Objective data Development II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating ...

Page 14

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited ...

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