PD57030S-E STMicroelectronics, PD57030S-E Datasheet

TRANS RF N-CH FET LDMOST PWRSO10

PD57030S-E

Manufacturer Part Number
PD57030S-E
Description
TRANS RF N-CH FET LDMOST PWRSO10
Manufacturer
STMicroelectronics
Datasheet

Specifications of PD57030S-E

Transistor Type
LDMOS
Frequency
945MHz
Gain
14dB
Voltage - Rated
65V
Current Rating
4A
Current - Test
50mA
Voltage - Test
28V
Power - Output
30W
Package / Case
PowerSO-10 Exposed Bottom Pad
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Other names
497-5308-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PD57030S-E
Manufacturer:
ST
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Part Number:
PD57030S-E
Manufacturer:
ST
Quantity:
20 000
Features
Description
The device is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 28 V in common source mode at frequencies of
up to 1 GHz. The device boasts the excellent
gain, linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD plastic
RF power package, PowerSO-10RF. Device’s
superior linearity performance makes it an ideal
solution for car mobile radio. The PowerSO-10
plastic package, designed to offer high reliability,
is the first ST JEDEC approved, high power SMD
package. It has been specially optimized for RF
needs and offers excellent RF performance and
ease of assembly. Mounting recommendations
are available in www.st.com/rf/ (look for
application note AN1294).
Table 1.
January 2011
Excellent thermal stability
Common source configuration
P
New RF plastic package
OUT
= 6 W with 15dB gain @ 945 MHz / 28 V
PD57006STR-E
PD57006TR-E
PD57006S-E
Order code
PD57006-E
Device summary
N-channel enhancement-mode, lateral MOSFETs
RF POWER transistor, LdmoST plastic family
PowerSO-10RF (straight lead)
PowerSO-10RF (straight lead)
PowerSO-10RF (formed lead)
PowerSO-10RF (formed lead)
Doc ID 12611 Rev 3
Package
Figure 1.
Gate
Pin connection
PowerSO-10RF
PowerSO-10RF
(straight lead)
(formed lead)
Tape and reel
Tape and reel
PD57006-E
Packing
Tube
Tube
Source
Drain
www.st.com
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PD57030S-E Summary of contents

Page 1

N-channel enhancement-mode, lateral MOSFETs Features ■ Excellent thermal stability ■ Common source configuration ■ with 15dB gain @ 945 MHz / 28 V OUT ■ New RF plastic package Description The device is a common source ...

Page 2

Contents Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

PD57006-E 1 Electrical data 1.1 Maximum ratings Table 2. Absolute maximum ratings (T Symbol V (BR)DSS DISS STG 1.2 Thermal data Table 3. Thermal data Symbol R thJC CASE Parameter Drain-source voltage ...

Page 4

Electrical characteristics 2 Electrical characteristics +25 C CASE 2.1 Static Table 4. Static Symbol (BR)DSS DSS GSS ...

Page 5

PD57006-E 3 Impedance Figure 2. Current conventions Table 7. Impedance data Freq. (MHz) 925 6.040 - j 0.936 945 5.886 - j 2.326 960 6.056 - j 3.522 PD57006-E Z (Ω) Z (Ω 6.273 + j 8.729 6.578 ...

Page 6

Typical performance 4 Typical performance Figure 3. Capacitance vs supply voltage 100 VDD, DRAIN VOLTAGE (V) Figure 5. Gate-source voltage vs case temperature 1.06 1.04 1.02 1 0.98 0.96 Vds=10 ...

Page 7

PD57006-E 4.1 PD57006-E Figure 6. Output power vs input power 9 8 925 MHz 960 MHz 0.1 0.2 Pin, INPUT POWER (W) Figure 8. Power gain vs output power 18 16 ...

Page 8

Typical performance Figure 10. Output power vs drain voltage 10 8 925 MHz 6 945 MHz 100 200 IDQ, BIAS CURRENT (mA) Figure 12. Output power vs supply voltage ...

Page 9

PD57006-E Figure 14. Output power vs gate-source voltage VGS, GATE-SOURCE VOLTAGE (V) 4.2 PD5706S-E Figure 15. Output power vs input power 9 8 925 ...

Page 10

Typical performance Figure 17. Power gain vs output power 18 16 945 dd=28V Idq=70m Pout, OUTPUT POWER (W) Figure 19. Output power vs bias ...

Page 11

PD57006-E Figure 21. Output power vs supply voltage 945 VDD, SUPPLY VOLTAGE (V) Figure 23. Output power vs gate-source voltage ...

Page 12

Test circuit 5 Test circuit Figure 24. Test circuit schematic Table 8. Test circuit component part list SHORT FERRITE BEAD, FAIR B1, B2 RITE PRODUCTS (2743021446) C1, C2, C11, 47 pF, 100B ATC CHIP C14 CAPACITOR 1000 pF, 100B ATC ...

Page 13

PD57006-E Figure 25. Test circuit photomaster Figure 26. Test circuit Table 9. Transmission line dimensions 0.430” X 0.084” Z1 MICROSTRIP 0.220” X 0.155” Z2 MICROSTRIP 0.960” X 0.120” Z3 MICROSTRIP 1.273” X 0.565” Z4 MICROSTRIP 0.195” X 0.250” Z5 MICROSTRIP ...

Page 14

Common source s-parameter 6 Common source s-parameter Table 10. S-parameter for PD57006-E (V Freq < Φ (MHz) 50 0.895 -79 100 0.786 -118 150 0.765 -134 200 0.767 -143 250 0.778 -151 300 0.790 -156 ...

Page 15

PD57006-E Table 11. S-parameter PD57006-E (V Freq < Φ (MHz) 50 0.953 -65 100 0.855 -104 150 0.823 -124 200 0.818 -136 250 0.824 -144 300 0.832 -150 350 0.835 -155 400 0.845 -159 450 ...

Page 16

Package mechanical data 7 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available ...

Page 17

PD57006-E Table 12. PowerSO-10RF formed lead (Gull Wing) mechanical data Dim Note: Resin protrusions not included (max value: 0.15 ...

Page 18

Package mechanical data Table 13. PowerSO-10RF straight lead mechanical data Dim Note: Resin protrusions not included (max value: 0.15 mm per ...

Page 19

PD57006-E Figure 29. Tube information Doc ID 12611 Rev 3 Package mechanical data 19/22 ...

Page 20

Package mechanical data Figure 30. Reel information 20/22 Doc ID 12611 Rev 3 PD57006-E ...

Page 21

PD57006-E 8 Revision history Table 14. Document revision history Date 06-May-2006 25-May-2010 03-Jan-2011 Revision 1 Initial release. 2 Added: Table 6: Moisture sensitivity 3 Content reworked to improve readability Doc ID 12611 Rev 3 Revision history Changes level. 21/22 ...

Page 22

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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