SD57060 STMicroelectronics, SD57060 Datasheet
SD57060
Specifications of SD57060
SD57060
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SD57060 Summary of contents
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... The SD57060 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57060 is designed for high gain and broadband performance operating in common source mode at 28V ideal for base station applications requiring high linearity. ...
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... Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Common source s-parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5.1 SD57060 (VDS = 13.5V IDS = 2A 5.2 SD57060 (VDS = 28V IDS = 2A Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 7 Text circuit layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/16 SD57060 ...
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... SD57060 1 Electrical data 1.1 Maximum ratings Table 2. Absolute maximum ratings (T Symbol V (BR)DSS DISS STG 1.2 Thermal data Table 3. Thermal data Symbol R thJC CASE Parameter Drain-source voltage Gate-source voltage Drain current Power dissipation (@ Tc = 70°C) Max. operating junction temperature Storage temperature Parameter ...
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... All phase angles 4/ Test conditions 250 MHz MHz MHz DS Test conditions I = 100 945MHz 100 945MHz DQ OUT I = 100 945MHz DQ OUT I = 100 945MHz DQ OUT SD57060 Min Typ Max Unit 65 V µA 1 µA 1 2.0 5.0 V 0.7 0 1.7 pF Min Typ Max Unit VSW 5:1 R ...
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... SD57060 3 Impedance Figure 2. Current conventions Table 5. Impedance data Freq. (MHz) 925 MHz 945 MHz 960 MHz Z (Ω 0.095 0 0.05 0 0.1 Impedance Z (Ω 0.48 1 0.25 1 0.130 5/16 ...
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... Pin (W) Figure 5. Efficiency vs output power 945 MHz Pout (W) 6/16 Figure OUT Figure 100 Output power and power gain vs input power Pout Gain Vdd= 32V f= 945MHz Idq= 100mA 0.5 1 1.5 2 2.5 Pin (W) Efficiency vs output power f = 945 MHz 100 Output Power (W) SD57060 ...
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... SD57060 Figure 7. Output power vs drain-source voltage Drain-Source Voltage (V) Figure 9. Power gain vs output power MHz 26 VDD = 50 V IDQ = 250 120 Pout, OUTPUT POWER (W) Figure 8. -15 Pin = 3 W -20 Pin = 2 W -25 -30 -35 Pin = 1 W -40 -45 IDQ = 100 1945 MHz -50 - Figure 10. Safe operating area 10 160 ...
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... Typical performance Figure 11. Capacitance vs drain-source voltage 1000 f = 1MHz Ciss 100 Coss 10 Crss Drain-Source Voltage (V) 8/ SD57060 ...
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... SD57060 5 Common source s-parameter 5.1 SD57060 (V Table 6. S-parameter Freq s11 MAG s11 ang s21 MAG s21 ang s12 MAG s12 ang s22 MAG s22 ang (MHz) 50 0.896 60 0.896 70 0.869 80 0.869 90 0.897 100 0.897 150 0.9 200 0.905 250 0.912 300 0.92 350 0 ...
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... Common source s-parameter 5.2 SD57060 (V Table 7. S-parameter Freq s11 MAG s11 ang s21 MAG s21 ang s12 MAG s12 ang s22 MAG s22 ang (MHz) 50 0.857 60 0.86 70 0.862 80 0.865 90 0.869 100 0.872 150 0.891 200 0.905 250 0.915 300 0.926 350 ...
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... SD57060 6 Test circuit Figure 12. Test circuit schematic 1 Dimensions at component symbols are reference for component placement. 2 Gap between ground & transmission line = 0.056 [1.42] +0.002 [0.05] -0.000 [0.00] typ. 3 Dimensions of input and output component from edge of transmission lines. Test circuit Ref. 7143566A ...
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... ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 0.1 µF / 500 V SURFACE MOUNT CERAMIC CHIP CAPACITOR 10 µ ALUMINIUM ELECTROLITIC RADIAL LEAD CAPACITOR 220 µ ALUMINIUM ELECTROLITIC RADIAL LEAD CAPACITOR ULTRALAM 2000, WOVEN FIBERGLASS REINFORCED PTFE. 0.030” THK, εr= 2.55 BOTH SIDES SD57060 ...
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... SD57060 7 Text circuit layout Figure 13. Test fixture Figure 14. Test circuit photomaster 6.4 inches Text circuit layout Ref. 7143566A Ref. 7143566A 13/16 ...
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... Max 5.21 5.72 5.46 6.48 5.59 6.10 14.27 20.07 20.57 8.89 9.40 0.10 0.15 3.18 4.45 1.83 2.24 1.27 1.78 SD57060 Inch Min Typ Max 0.205 0.225 0.215 0.255 0.220 0.240 0.562 0.790 0.810 0.350 0.370 0.004 0.006 0.125 0.175 0.072 ...
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... SD57060 9 Revision history Table 10. Document revision history Date 24-Mar-2003 23-Jul-2007 24-Aug-2007 Revision 5 First Issue. 6 Document reformatted, added lead free info 7 Cover page title updated Revision history Changes 15/16 ...
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... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 16/16 Please Read Carefully: © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com SD57060 ...