MRFG35010NR5 Freescale Semiconductor, MRFG35010NR5 Datasheet

TRANSISTOR RF 9W 12V POWER FET

MRFG35010NR5

Manufacturer Part Number
MRFG35010NR5
Description
TRANSISTOR RF 9W 12V POWER FET
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRFG35010NR5

Transistor Type
pHEMT FET
Frequency
3.55GHz
Gain
10dB
Voltage - Rated
15V
Current Rating
2.9A
Current - Test
180mA
Voltage - Test
12V
Power - Output
9W
Package / Case
PLD-1.5
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Other names
MRFG35010NR5TR
© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class
AB linear base station applications.
• Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,
• 9 Watts P1dB @ 3.55 GHz
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. Moisture Sensitivity Level
MRFG35010NT1 replaced by MRFG35010ANT1.
Drain - Source Voltage
Total Device Dissipation @ T
Gate - Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature
Operating Case Temperature Range
Thermal Resistance, Junction to Case
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Simulated.
@ 0.01% Probability)
I
Derate above 25°C
DQ
Output Power — 900 mW
Power Gain — 10 dB
Efficiency — 28%
= 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
(1)
Test Methodology
C
= 25°C
Characteristic
Rating
Rating
1
Symbol
Symbol
V
R
V
T
P
P
T
T
DSS
Package Peak Temperature
θJC
GS
stg
ch
D
in
C
Document Number: MRFG35010N
MRFG35010NT1
CASE 466 - 03, STYLE 1
260
3.5 GHz, 9 W, 12 V
- 65 to +150
- 20 to +85
GaAs PHEMT
POWER FET
22.7
0.15
Value
Value
6.6
175
15
33
PLASTIC
- 5
PLD - 1.5
(2)
(2)
(2)
MRFG35010NT1
Rev. 7, 1/2008
W/°C
°C/W
Unit
dBm
Unit
Unit
Vdc
Vdc
°C
°C
°C
°C
W
1

Related parts for MRFG35010NR5

MRFG35010NR5 Summary of contents

Page 1

... Table 3. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 1. For reliable operation, the operating channel temperature should not exceed 150°C. 2. Simulated. © Freescale Semiconductor, Inc., 2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor Document Number: MRFG35010N MRFG35010NT1 3 ...

Page 2

... D ACPR = 180 mA, Min Typ Max — 2.9 — — < 1.0 100 μAdc — 0.1 1.0 mAdc — 2.0 15 mAdc - 1.2 - 1.0 - 0.7 - 1.2 - 0.95 - 0.7 9.0 10 — — 9 — — — Device Data Freescale Semiconductor Unit Adc Vdc Vdc dBc ...

Page 3

... Chip Capacitors C7, C16 100 pF Chip Capacitors C8, C15 1000 pF Chip Capacitors C9, C14 0.1 μF Chip Capacitors C10, C13 39K pF Chip Capacitors C11, C12 10 μF Chip Capacitors R1 47 Ω Chip Resistor RF Device Data Freescale Semiconductor C5 C4 C19 Z9 Z12 Z10 Z11 Z11 Z12 Z13 ...

Page 4

... C10 C9 C11 C1 Figure 2. 3.5 GHz Test Circuit Component Layout MRFG35010NT1 4 C8 C15 C7 C16 C6 C17 C5 C18 C14 C13 C12 C19 C20 C22 C21 MRFG35010XX, Rev Device Data Freescale Semiconductor ...

Page 5

... NOTE: All data is referenced to package lead interface. Γ All data is generated from load pull, not from the test circuit shown. RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS IRL Vdc 180 3.55 GHz, 8.66 P/A 3GPP W−CDMA Γ = 0.898é−134.03_, Γ ...

Page 6

... RF Device Data Freescale Semiconductor ...

Page 7

... RF Device Data Freescale Semiconductor = 12 Vdc 180 mA (continued ∠ φ 0.906 23.27 0.021 0.894 22.02 0.022 0.883 20.80 0.021 ...

Page 8

... U 0.006 0.012 0.15 ZONE V 0.000 0.021 0.00 ZONE W 0.000 0.010 0.00 ZONE X 0.000 0.010 0.00 RF Device Data Freescale Semiconductor inches mm MAX 6.73 5.97 1.83 3.81 0.66 1.12 1.78 1.60 4.57 7.24 6.48 6.10 0.20 1.60 5.33 0.31 0.31 ...

Page 9

... The following table summarizes revisions to this document. Revision Date 7 Jan. 2008 • Listed replacement part • Added Revision History Device Data Freescale Semiconductor REVISION HISTORY Description MRFG35010NT1 9 ...

Page 10

... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

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