BF245A Fairchild Semiconductor, BF245A Datasheet
BF245A
Manufacturer Part Number
BF245A
Description
IC AMP RF N-CH 30V TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.BF245C.pdf
(3 pages)
Specifications of BF245A
Transistor Type
N-Channel JFET
Voltage - Rated
30V
Current Rating
6.5mA
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
N-Channel
Power Dissipation
350 mW
Drain Source Voltage Vds
30 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
100 mA
Drain Current (idss At Vgs=0)
2 mA to 6.5 mA
Forward Transconductance Gfs (max / Min)
0.003 S to 0.0065 S
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
30 V
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Frequency
-
Gain
-
Noise Figure
-
Current - Test
-
Voltage - Test
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BF245A
BF245AFS
BF245AFS
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©2003 Fairchild Semiconductor Corporation
N-Channel Amplifiers
• This device is designed for VHF/UHF amplifiers.
• Sourced from process 50.
Absolute Maximum Ratings
Electrical Characteristics
V
V
I
P
T
Off Characteristics
V
V
V
I
On Characteristics
I
On Characteristics
g
GF
Symbol
GSS
DSS
fs
J,
DG
GS
D
(BR)GSS
GS
GS
T
Symbol
(off)
STG
Gate-Source Breakdown Voltage
Gate-Source
Gate-Source Cut-off Voltage
Gate Reverse Current
Zero-Gate Voltage Drain Current
Common Source Forward
Transconductance
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Total Device Dissipation @T
Derate above 25 C
Operating and Storage Junction Temperature Range
Parameter
BF245A/BF245B/BF245C
BF245B
BF245C
BF245A
BF245B
BF245C
BF245A
T
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
A
=25 C
V
V
V
V
V
V
DS
DS
DS
GS
GS
GS
= 15V, I
= 0, I
= 15V, I
= -20V, V
= 15V, V
= 15V, V
Test Condition
G
= 1 A
D
D
GS
GS
GS
= 200 A
= 10nA
= 0
= 0, f = 1KHz
= 0
1. Gate 2. Source 3. Drain
1
- 55 ~ 150
Value
Min.
-0.5
-0.4
-1.6
-3.2
-30
12
350
-30
2.8
2
6
3
30
10
TO-92
Max.
-2.2
-3.8
-7.5
6.5
6.5
15
25
-8
-5
Rev. A1, June 2003
mW/ C
mmhos
Units
mW
mA
Units
V
mA
V
nA
C
V
V
V
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BF245A Summary of contents
Page 1
... Fairchild Semiconductor Corporation T =25 C unless otherwise noted a Parameter = =25 C unless otherwise noted a Test Condition BF245A V = 15V 200 BF245B BF245C V = 15V 10nA -20V BF245A V = 15V BF245B BF245C V = 15V 1KHz GS GS TO- Gate 2. Source 3. Drain Value Units 350 mW 2.8 mW 150 C Min. Max. Units - ...
Page 2
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2003 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A1, June 2003 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...