IC PHEMT 2GHZ 4.5V 200MA 8-LPCC

 

ATF-521P8-TR2

Manufacturer Part NumberATF-521P8-TR2
DescriptionIC PHEMT 2GHZ 4.5V 200MA 8-LPCC
ManufacturerAvago Technologies US Inc.
ATF-521P8-TR2 datasheets

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Specifications of ATF-521P8-TR2

Gain17dBTransistor TypepHEMT FET
Frequency2GHzVoltage - Rated7V
Current Rating500mANoise Figure1.5dB
Current - Test200mAVoltage - Test4.5V
Power - Output26.5dBmPackage / Case8-LPCC
Drain Source Voltage Vds4.5VContinuous Drain Current Id500mA
Power Dissipation Pd1.5WNoise Figure Typ1.5dB
Rf Transistor CaseLPCCNo. Of Pins8
Frequency Max6GHzFrequency Min50MHz
Drain Current Idss Max200mARohs CompliantYes
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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ATF-521P8 Typical Scattering Parameters, V
Freq.
S
11
GHz
Mag.
Ang.
dB
0.1
0.913
‑84.6
34.2
0.2
0.900
‑125.0
30.3
0.3
0.896
‑142.0
27.4
0.4
0.893
‑152.3
25.1
0.5
0.882
‑158.4
23.4
0.6
0.895
‑164.2
21.8
0.7
0.893
‑167.8
20.6
0.8
0.895
‑170.8
19.5
0.9
0.897
‑173.0
18.5
1
0.895
‑175.5
17.6
1.5
0.893
176.0
14.1
2
0.889
169.2
11.8
2.5
0.882
163.6
10.0
3
0.888
157.9
8.4
4
0.883
146.8
5.9
5
0.885
137.7
3.8
6
0.892
128.0
2.1
7
0.894
120.4
0.6
8
0.880
105.7
‑1.0
9
0.876
96.5
‑1.9
10
0.879
84.4
‑3.0
11
0.889
72.8
‑3.8
12
0.881
62.4
‑5.2
13
0.893
54.0
‑6.3
14
0.891
42.1
‑7.2
15
0.888
34.1
‑8.3
16
0.845
25.3
‑9.1
17
0.828
13.2
‑11.2 0.28
18
0.827
‑10.2
‑11.0 0.28
Typical Noise Parameters, V
= 4.5V, I
DS
Freq
F
Γ
Γ
min
opt
opt
GHz
dB
Mag.
Ang.
0.5
0.60
0.19
162.00
1.0
0.72
0.30
164.00
2.0
0.81
0.44
176.97
3.0
0.92
0.56
‑164.98
4.0
1.24
0.59
‑155.51
5.0
1.50
0.70
‑136.55
6.0
1.60
0.75
‑128.59
7.0
1.88
0.81
‑117.31
8.0
2.02
0.68
‑109.54
Notes:
1. F
values at 2 GHz and higher are based on measurements while the F
min
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true F
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead.
11
= 4.5V, I
= 120 mA
DS
DS
S
S
21
12
Mag.
Ang.
dB
Mag.
51.26
135.4
‑36.4
0.015
32.80
115.4
‑33.9
0.020
23.39
106.1
‑33.4
0.021
17.89
100.3
‑32.9
0.023
14.75
96.3
‑32.6
0.023
12.36
92.9
‑32.7
0.023
10.71
90.5
‑32.4
0.024
9.39
88.0
‑32.3
0.024
8.44
86.1
‑32.2
0.025
7.59
83.6
‑31.8
0.026
5.07
75.3
‑31.1
0.028
3.89
67.8
‑30.0
0.032
3.15
61.2
‑29.0
0.036
2.62
54.6
‑28.2
0.039
1.97
40.7
‑26.5
0.047
1.55
28.2
‑25.2
0.055
1.28
16.7
‑24.0
0.063
1.08
5.1
‑22.8
0.072
0.89
‑8.7
‑21.2
0.087
0.81
‑20.8
‑20.1
0.099
0.71
‑32.7
‑19.3
0.108
0.65
‑44.3
‑18.6
0.118
0.55
‑56.0
‑18.1
0.125
0.48
‑66.6
‑17.7
0.130
0.44
‑72.6
‑17.3
0.136
0.39
‑79.2
‑16.8
0.144
0.35
‑89.6
‑16.1
0.157
‑95.9
‑15.6
0.167
‑92.5
‑16.6
0.147
= 120 mA
40.0
DS
R
G
30.0
n
a
dB
20.0
3.0
20.0
2.6
18.3
10.0
2.0
15.9
0.0
2.0
13.6
3.4
11.1
-10.0
11.1
9.7
16.0
8.7
-20.0
0
24.0
7.6
28.8
5.6
Figure 42. MSG/MAG and |S
Frequency at 4.5V, 120 mA.
below 2 GHz have been extrapolated. The F
mins
S
22
Ang.
Mag.
Ang.
49.0
0.423
‑106.6
31.2
0.499
‑139.4
25.3
0.522
‑153.4
23.5
0.530
‑161.1
22.5
0.531
‑165.0
20.6
0.537
‑168.4
20.4
0.537
‑171.2
21.1
0.539
‑173.1
22.1
0.539
‑174.8
23.0
0.540
‑176.9
25.5
0.538
177.4
27.9
0.528
172.2
30.2
0.526
168.1
30.2
0.528
163.9
29.7
0.536
155.7
26.3
0.556
148.1
21.9
0.576
140.5
18.2
0.591
133.1
10.6
0.585
124.3
3.2
0.602
114.9
‑5.2
0.605
104.5
‑13.5
0.624
94.2
‑23.1
0.642
83.4
‑31.4
0.664
72.4
‑38.4
0.697
65.1
‑45.9
0.732
56.7
‑55.0
0.751
50.4
‑64.2
0.821
44.0
‑86.1
0.654
39.9
MSG
MAG
S
21
5
10
15
20
FREQUENCY (GHz)
2
|
vs.
21
values are based on
min
MSG/MAG
dB
35.3
32.1
30.5
28.9
28.1
27.3
26.5
25.9
25.3
24.7
22.6
20.8
19.4
16.9
13.6
11.6
10.2
8.9
6.6
5.7
4.7
4.3
2.7
2.2
1.2
0.4
‑1.5
‑3.9
‑4.3
is
min

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