IC PHEMT 2GHZ 4.5V 200MA 8-LPCC

 

ATF-521P8-TR1

Manufacturer Part NumberATF-521P8-TR1
DescriptionIC PHEMT 2GHZ 4.5V 200MA 8-LPCC
ManufacturerAvago Technologies US Inc.
ATF-521P8-TR1 datasheets

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Specifications of ATF-521P8-TR1

Gain17dBTransistor TypepHEMT FET
Frequency2GHzVoltage - Rated7V
Current Rating500mANoise Figure1.5dB
Current - Test200mAVoltage - Test4.5V
Power - Output26.5dBmPackage / Case8-LPCC
Power Dissipation Pd1.5WRf Transistor CaseLPCC
No. Of Pins8Frequency Max6GHz
Noise Figure Typ1.5dBFrequency Min50MHz
Continuous Drain Current Id14.8µAConfigurationSingle Dual Source
Drain-gate Voltage (max)-5 to 1VOperating Temperature (max)150C
Operating Temperature ClassificationMilitaryMountingSurface Mount
Drain Current Idss Max200mADrain Source Voltage Vds4.5V
Rohs CompliantYesLead Free Status / RoHS StatusLead free / RoHS Compliant
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ATF-521P8
High Linearity Enhancement Mode
in 2x2 mm
LPCC
Package
2
[3]
Data Sheet
Description
Avago Technologies’ ATF‑521P8 is a single‑voltage high
linearity, low noise E‑pHEMT housed in an 8‑lead JEDEC‑
standard leadless plastic chip carrier (LPCC
The device is ideal as a medium‑power, high‑linearity
amplifier. Its operating frequency range is from 50 MHz
to 6 GHz.
The thermally efficient package measures only 2mm
x 2mm x 0.75mm. Its backside metalization provides
excellent thermal dissipation as well as visual evidence
of solder reflow. The device has a Point MTTF of over
300 years at a mounting temperature of +85°C. All
devices are 100% RF & DC tested.
Pin Connections and Package Marking
Pin 8
Pin 1 (Source)
Pin 7 (Drain)
Pin 2 (Gate)
Pin 6
Pin 3
Pin 5
Pin 4 (Source)
Bottom View
Pin 1 (Source)
Pin 8
Pin 2 (Gate)
Pin 7 (Drain)
2Px
Pin 3
Pin 6
Pin 4 (Source)
Pin 5
Top View
Note:
Package marking provides orientation and identification
“2P” = Device Code
“x” = Month code indicates the month of manufacture.
Note:
1. Enhancement mode technology employs a single positive V
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed MTTF data
3. Conform to JEDEC reference outline MO229 for DRP‑N
4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC
bias power.
Pseudomorphic HEMT
[1]
Features
• Single voltage operation
• High linearity and P1dB
) package.
[3]
• Low noise figure
• Excellent uniformity in product specifications
• Small package size: 2.0 x 2.0 x 0.75 mm
• Point MTTF > 300 years
• MSL‑1 and lead‑free
• Tape‑and‑reel packaging option available
Specifications
• 2 GHz; 4.5V, 200 mA (Typ.)
• 42 dBm output IP3
• 26.5 dBm output power at 1 dB gain compression
• 1.5 dB noise figure
• 17 dB Gain
• 12.5 dB LFOM
Applications
• Front‑end LNA Q2 and Q3, driver or pre‑driver amplifier
for Cellular/PCS and WCDMA wireless infrastructure
• Driver amplifier for WLAN, WLL/RLL and MMDS applica‑
tions
• General purpose discrete E‑pHEMT for other high linear‑
ity applications
,
gs
3
[2]
[4]
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1C)
Refer to Avago Technologies Application Note
A004R: Electrostatic Discharge Damage and Control.

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ATF-521P8-TR1 Summary of contents

  • Page 1

    ... Data Sheet Description Avago Technologies’ ATF‑521P8 is a single‑voltage high linearity, low noise E‑pHEMT housed in an 8‑lead JEDEC‑ standard leadless plastic chip carrier (LPCC The device is ideal as a medium‑power, high‑linearity amplifier. Its operating frequency range is from 50 MHz to 6 GHz ...

  • Page 2

    ... ATF-521P8 Absolute Maximum Ratings Symbol Parameter V Drain – Source Voltage DS V Gate –Source Voltage [ Gate Drain Voltage [ Drain Current [ Gate Current GS P Total Power Dissipation diss P RF Input Power in max. T Channel Temperature CH T Storage Temperature STG θ Thermal Resistance [4] ch_b Notes: 1 ...

  • Page 3

    ... ATF-521P8 Electrical Specifications T = 25°C, DC bias for RF parameters is Vds = 4.5V and Ids = 200 mA unless otherwise specified. A Symbol Parameter and Test Condition Vgs Operational Gate Voltage Vth Threshold Voltage Idss Saturated Drain Current Gm Transconductance Igss Gate Leakage Current NF Noise Figure [1] G Gain ...

  • Page 4

    Ohm 110 Ohm 1.5 pF .02 λ .03 λ RF Input Ohm 2.2 µF Gate Supply Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement ...

  • Page 5

    ... ATF-521P8 Typical Performance Curves Tuned for Optimal OIP3 4. 100 150 200 250 300 350 400 I (mA) d Figure 8. OIP3 vs. I and GHz 4. 100 150 200 250 300 350 400 I (mA) dq Figure 11. P1dB vs. I and GHz 4. 100 150 200 250 300 350 400 ...

  • Page 6

    ... ATF-521P8 Typical Performance Curves, Tuned for Optimal OIP3 4. 100 150 200 250 300 350 400 I (mA) dq Figure 17. PAE @ P1dB vs. I and GHz 85°C 25 25°C -40° 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) Figure 20. OIP3 vs. Temp and Freq tuned for optimal OIP3 at 4.5V, 200 mA. ...

  • Page 7

    ... ATF-521P8 Typical Performance Curves Tuned for Optimal P1dB 4. 100 150 200 250 300 350 400 I (mA) d Figure 24. OIP3 vs. I and GHz 4. 100 150 200 250 300 350 400 I (mA) dq Figure 27. P1dB vs. I and GHz 4. 100 150 200 250 300 350 400 ...

  • Page 8

    ... ATF-521P8 Typical Performance Curves Tuned for Optimal P1dB 4. 100 150 200 250 300 350 400 I dq (mA) Figure 33. PAE @ P1dB vs. I and GHz 85°C 25 25°C -40° 0.5 1.5 2 2 FREQUENCY (GHz) Figure 36. OIP3 vs. Temp and Freq tuned for optimal P1dB at 4.5V, 200 mA. ...

  • Page 9

    ... ATF-521P8 Typical Scattering Parameters at 25°C, V Freq GHz Mag. Ang. dB 0.1 0.613 ‑96.9 33.2 0.2 0.780 ‑131.8 30.0 0.3 0.831 ‑147.2 27.3 0.4 0.855 ‑156.4 25.1 0.5 0.860 ‑162.0 23.5 0.6 0.878 ‑166.7 22.0 0.7 0.888 ‑170.2 20.8 0.8 0.887 ‑172.6 19 ...

  • Page 10

    ... ATF-521P8 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.823 ‑89.9 34.4 0.2 0.873 ‑128.7 30.5 0.3 0.879 ‑145.5 27.6 0.4 0.885 ‑155.1 25.2 0.5 0.883 ‑161.1 23.6 0.6 0.897 ‑165.9 22.1 0.7 0.895 ‑169.5 20.8 0.8 0.894 ‑171.9 19.6 0.9 0.900 ‑ ...

  • Page 11

    ... ATF-521P8 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.913 ‑84.6 34.2 0.2 0.900 ‑125.0 30.3 0.3 0.896 ‑142.0 27.4 0.4 0.893 ‑152.3 25.1 0.5 0.882 ‑158.4 23.4 0.6 0.895 ‑164.2 21.8 0.7 0.893 ‑167.8 20.6 0.8 0.895 ‑170.8 19.5 0.9 0.897 ‑ ...

  • Page 12

    ... ATF-521P8 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.843 ‑90.5 34.3 0.2 0.879 ‑129.3 30.3 0.3 0.888 ‑146.1 27.4 0.4 0.892 ‑155.6 25.1 0.5 0.886 ‑161.5 23.4 0.6 0.896 ‑165.7 21.8 0.7 0.897 ‑169.5 20.6 0.8 0.898 ‑172.2 19.5 0.9 0.896 ‑ ...

  • Page 13

    ... ATF-521P8 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.867 ‑94.6 33.7 0.2 0.894 ‑132.9 29.4 0.3 0.899 ‑148.2 26.5 0.4 0.896 ‑157.2 24.1 0.5 0.892 ‑162.8 22.4 0.6 0.910 ‑167.4 20.8 0.7 0.906 ‑170.8 19.6 0.8 0.902 ‑173.6 18.4 0.9 0.907 ‑ ...

  • Page 14

    ... S11 * Figure 1. Input Match for ATF-521P 8 GHz. Figure 1. Input Match for ATF-521P8 at 2 GHz. Thus, it should be obvious from the illustration above that if this device is matched for maximum return loss i.e. S11*, then OIP3 will be sacrificed. Conversely, if ATF‑521P8 is matched for maximum linearity, then 14 return loss will not be greater than 10 dB. For most ap‑ ...

  • Page 15

    ... Amp + + Frequency Frequency Figure 7. Input and Output Match for ATF-521P8 at 2 GHz. 15 Figure 7 displays the input and output matching selected for ATF‑521P8. In this example the input and output match both essentially function as high pass filters, but the high frequency gain of the device rolls off ...

  • Page 16

    ... Figure 8. Passive Biasing. Active Bias [2] Due to very high DC power dissipation and small package constraints recommended that ATF‑521P8 use active biasing. The main advantage of an active biasing scheme is the ability to hold the drain to source current constant over a wide range of temperature variations. ...

  • Page 17

    ... PCB Layout A recommended PCB pad layout for the Leadless Plastic Chip Carrier (LPCC) package used by the ATF‑521P8 is shown in Figure 10. This layout provides plenty of plated through hole vias for good thermal and RF grounding. It also provides a good transition from microstrip to the device package. For more detailed dimensions refer to Section 9 of the data sheet ...

  • Page 18

    ... The output is matched to Γ high pass network. The next step is to choose the proper DC biasing conditions. From the data sheet, ATF‑521P8 produces good linearity at a drain current of 200mA and a drain to source voltage of 4.5V. Thus to construct the active bias circuit described, the following ...

  • Page 19

    ... Figure 16. Input and Output Return Loss vs. Frequency. Frequency. Perhaps the most critical system level specification for the ATF‑521P8 lies in its distortion‑less output power. Typically, amplifiers are characterized for linearity by measuring OIP3. This is a two‑tone harmonic mea‑ surement using CW signals. But because WCDMA is a modulated waveform spread across 3 ...

  • Page 20

    ... ATF‑521P8 demoboard. The first case is done with just the demoboard by itself. The second case is the ATF demoboard mounted on a chassis or metal casing, and the results are given below: Table 4. Thermal resistance measurements. ...

  • Page 21

    ... End View 21 References [1] Ward, A. (2001) Avago Technologies ATF-54143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package, 2001 [Internet], Available from: <http://www.avagotech.com> [2] Biasing Circuits and Considerations for GaAs MESFET Power Amplifiers, 2001 [Internet], Available from: <http://www.rf‑solutions.com/pdf/AN‑0002_ajp.pdf> ...

  • Page 22

    PCB Land Pattern and Stencil Design 2.80 (110.24) 0.70 (27.56) 0.25 (9.84) PIN 1 φ0.20 (7.87) Solder + mask 0.60 (23.62) RF transmission 0.80 (31.50) line 0.15 (5.91) 0.55 (21.65) PCB Land Pattern (top view) Device Orientation REEL USER FEED ...

  • Page 23

    Tape Dimensions 10° Max A 0 DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER PERFORATION DIAMETER PITCH POSITION CARRIER TAPE WIDTH THICKNESS COVER TAPE WIDTH TAPE THICKNESS DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY ...

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