BLF2043F,112 NXP Semiconductors, BLF2043F,112 Datasheet

TRANSISTOR RF LDMOS SOT467C

BLF2043F,112

Manufacturer Part Number
BLF2043F,112
Description
TRANSISTOR RF LDMOS SOT467C
Manufacturer
NXP Semiconductors
Datasheet
1.BLF2043F135.pdf (12 pages)

Specifications of BLF2043F,112

Package / Case
SOT467C
Transistor Type
LDMOS
Frequency
2.2GHz
Gain
11dB
Voltage - Rated
65V
Current Rating
2.2A
Current - Test
85mA
Voltage - Test
26V
Power - Output
10W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.2 Ohmss
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
2.2 A
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934056375112
BLF2043F
BLF2043F
Product specification
Supersedes data of 2000 Oct 19
DATA SHEET
BLF2043F
UHF power LDMOS transistor
DISCRETE SEMICONDUCTORS
M3D381
2002 Mar 05

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BLF2043F,112 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET BLF2043F UHF power LDMOS transistor Product specification Supersedes data of 2000 Oct 19 M3D381 2002 Mar 05 ...

Page 2

Philips Semiconductors UHF power LDMOS transistor FEATURES High power gain Easy power control Excellent ruggedness Source on mounting base eliminates DC isolators, reducing common mode inductance Designed for broadband operation (HF to 2.2 GHz). APPLICATIONS Communication transmitter applications in the ...

Page 3

Philips Semiconductors UHF power LDMOS transistor THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to mounting base th j-mb R thermal resistance from mounting base to heatsink th mb-h Note 1. Thermal resistance is determined under RF operating conditions. CHARACTERISTICS ...

Page 4

Philips Semiconductors UHF power LDMOS transistor APPLICATION INFORMATION RF performance in a common source class-AB circuit. T MODE OF OPERATION CW, class-AB (2-tone 2200 Ruggedness in class-AB operation The BLF2043F is capable of withstanding a load ...

Page 5

Philips Semiconductors UHF power LDMOS transistor 15 handbook, halfpage (dB mA 2200 MHz 2200.1 MHz ...

Page 6

Philips Semiconductors UHF power LDMOS transistor 8 handbook, halfpage 1.8 1 ...

Page 7

Philips Semiconductors UHF power LDMOS transistor List of components (see Figs 10 and 11) COMPONENT C1, C2, C10, C11 multilayer ceramic chip capacitor; note 1 6.8 pF C3, C4, C7, C9 Tekelec variable capacitor; type 37271 C5 multilayer ceramic chip ...

Page 8

Philips Semiconductors UHF power LDMOS transistor handbook, full pagewidth BLF2043F 2.2 GHz input 60 Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric ( The other side is unetched and serves ...

Page 9

Philips Semiconductors UHF power LDMOS transistor PACKAGE OUTLINE Flanged LDMOST ceramic package; 2 mounting holes; 2 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT 4.67 5.59 0.15 ...

Page 10

Philips Semiconductors UHF power LDMOS transistor DATA SHEET STATUS PRODUCT (1) DATA SHEET STATUS STATUS Objective data Development Preliminary data Qualification Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. ...

Page 11

Philips Semiconductors UHF power LDMOS transistor 2002 Mar 05 NOTES 11 Product specification BLF2043F ...

Page 12

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited ...

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