BLF2043F,112 NXP Semiconductors, BLF2043F,112 Datasheet - Page 9

TRANSISTOR RF LDMOS SOT467C

BLF2043F,112

Manufacturer Part Number
BLF2043F,112
Description
TRANSISTOR RF LDMOS SOT467C
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF2043F,112

Package / Case
SOT467C
Transistor Type
LDMOS
Frequency
2.2GHz
Gain
11dB
Voltage - Rated
65V
Current Rating
2.2A
Current - Test
85mA
Voltage - Test
26V
Power - Output
10W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.2 Ohmss
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
2.2 A
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934056375112
BLF2043F
BLF2043F
Philips Semiconductors
PACKAGE OUTLINE
2002 Mar 05
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
UHF power LDMOS transistor
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
inch
mm
OUTLINE
VERSION
SOT467C
0.184
0.155
4.67
3.94
A
0.220
0.210
5.59
5.33
H
b
U 2
A
A
0.006
0.004
0.15
0.10
c
IEC
0.364
0.356
9.25
9.04
D
0.365
0.355
9.27
9.02
D 1
0.233
0.227
5.92
5.77
JEDEC
E
D 1
U 1
REFERENCES
0.235
0.225
D
q
b
5.97
5.72
E 1
3
0
1
2
0.065
0.055
1.65
1.40
F
scale
18.54
17.02
EIAJ
0.73
0.67
w 2
9
H
5
p
M
C
0.135
0.125
3.43
3.18
C
M
p
10 mm
0.087
0.077
2.21
1.96
w 1
F
B
Q
M
A
14.27
0.562
M
q
B
M
20.45
20.19
0.805
0.795
U 1
E 1
PROJECTION
EUROPEAN
0.235
0.225
5.97
5.72
U 2
c
Q
0.010 0.020
0.25
w 1
Product specification
0.51
w 2
BLF2043F
E
ISSUE DATE
99-12-06
99-12-28
SOT467C

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