TRANSISTOR RF LDMOS SOT467C

BLF2043F,112

Manufacturer Part NumberBLF2043F,112
DescriptionTRANSISTOR RF LDMOS SOT467C
ManufacturerNXP Semiconductors
BLF2043F,112 datasheet
 

Specifications of BLF2043F,112

Package / CaseSOT467CTransistor TypeLDMOS
Frequency2.2GHzGain11dB
Voltage - Rated65VCurrent Rating2.2A
Current - Test85mAVoltage - Test26V
Power - Output10WConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)1.2 Ohmss
Drain-source Breakdown Voltage65 VGate-source Breakdown Voltage+/- 15 V
Continuous Drain Current2.2 AMaximum Operating Temperature+ 200 C
Mounting StyleSMD/SMTMinimum Operating Temperature- 65 C
Lead Free Status / RoHS StatusLead free / RoHS CompliantNoise Figure-
Other names934056375112
BLF2043F
BLF2043F
  
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Philips Semiconductors
UHF power LDMOS transistor
THERMAL CHARACTERISTICS
SYMBOL
R
thermal resistance from junction to mounting base
th j-mb
R
thermal resistance from mounting base to heatsink
th mb-h
Note
1. Thermal resistance is determined under RF operating conditions.
CHARACTERISTICS
T
= 25 C unless otherwise specified.
j
SYMBOL
PARAMETER
V
drain-source breakdown voltage
(BR)DSS
V
gate-source threshold voltage
GSth
I
drain-source leakage current
DSS
I
on-state drain current
DSX
I
gate leakage current
GSS
g
forward transconductance
fs
R
drain-source on-state resistance
DSon
C
input capacitance
is
C
output capacitance
os
C
feedback capacitance
rs
2
10
handbook, halfpage
C
(pF)
C os
C is
10
C rs
1
1
10
0
10
V
= 0; f = 1 MHz.
GS
Fig.2
Input, output and feedback capacitance as
functions of drain-source voltage, typical
values.
2002 Mar 05
PARAMETER
CONDITIONS
V
= 0; I
= 0.2 mA
GS
D
V
= 10 V; I
DS
D
V
= 0; V
= 26 V
GS
DS
V
= V
+ 9 V; V
GS
GSth
V
= 15 V; V
GS
V
= 10 V; I
DS
D
V
= 10 V; I
GS
D
V
= 0; V
= 26 V; f = 1 MHz
GS
DS
V
= 0; V
= 26 V; f = 1 MHz
GS
DS
V
= 0; V
= 26 V; f = 1 MHz
GS
DS
MGW642
20
30
V DS (V)
3
Product specification
CONDITIONS
VALUE
T
= 25 C; note 1
mb
0.5
MIN.
TYP.
75
= 20 mA
4
= 10 V
2.8
DS
= 0
DS
= 0.75 A
0.5
= 0.75 A
1.2
13
11
0.5
BLF2043F
UNIT
5
K/W
K/W
MAX.
UNIT
V
5
V
1.5
A
A
40
nA
S
pF
pF
pF