BLF2043F,112 NXP Semiconductors, BLF2043F,112 Datasheet - Page 4

TRANSISTOR RF LDMOS SOT467C

BLF2043F,112

Manufacturer Part Number
BLF2043F,112
Description
TRANSISTOR RF LDMOS SOT467C
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF2043F,112

Package / Case
SOT467C
Transistor Type
LDMOS
Frequency
2.2GHz
Gain
11dB
Voltage - Rated
65V
Current Rating
2.2A
Current - Test
85mA
Voltage - Test
26V
Power - Output
10W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.2 Ohmss
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
2.2 A
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934056375112
BLF2043F
BLF2043F
Philips Semiconductors
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
Ruggedness in class-AB operation
The BLF2043F is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V
2002 Mar 05
handbook, halfpage
CW, class-AB (2-tone)
MODE OF OPERATION
UHF power LDMOS transistor
V
f
Fig.3
1
DS
= 2000 MHz; f
(dB)
G p
= 26 V; I
15
10
5
0
0
Power gain and efficiency as functions of
peak envelope load power, typical values.
DQ
= 85 mA;
2
= 2000.1 MHz.
4
G p
DS
f
1
8
= 26 V; f = 2200 MHz at rated load power.
= 2200; f
P L (PEP) (W)
(MHz)
12
f
2
= 2200.1
D
MGW643
16
60
40
20
0
(%)
D
V
(V)
26
h
DS
= 25 C; R
4
handbook, halfpage
V
f
Fig.4
1
(mA)
DS
(dBc)
= 2000 MHz; f
I
d im
85
DQ
= 26 V; I
th mb-h
20
40
60
80
0
0
Intermodulation distortion as a function of
peak envelope load power; typical values.
DQ
= 0.4 K/W; unless otherwise specified.
10 (PEP)
= 85 mA; T
2
(W)
P
= 2000.1 MHz.
L
4
h
25 C;
(dB)
>11
G
8
p
d 3
d 5
d 7
P L (PEP) (W)
Product specification
12
>30
(%)
BLF2043F
D
MGW644
16
(dBc)
d
im
26

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