BLF6G27LS-135,118 NXP Semiconductors, BLF6G27LS-135,118 Datasheet

TRANS WIMAX PWR LDMOS SOT502B

BLF6G27LS-135,118

Manufacturer Part Number
BLF6G27LS-135,118
Description
TRANS WIMAX PWR LDMOS SOT502B
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G27LS-135118.pdf (13 pages)

Specifications of BLF6G27LS-135,118

Transistor Type
LDMOS
Frequency
2.5GHz
Gain
16dB
Voltage - Rated
65V
Current Rating
34A
Current - Test
1.2A
Voltage - Test
32V
Power - Output
20W
Package / Case
SOT502B
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
34A
Drain Source Voltage (max)
65V
Output Power (max)
200W(Typ)
Power Gain (typ)@vds
16@32VdB
Frequency (min)
2.5GHz
Frequency (max)
2.7GHz
Package Type
LDMOST
Pin Count
3
Forward Transconductance (typ)
12S
Drain Source Resistance (max)
135@6.15Vmohm
Reverse Capacitance (typ)
3.15@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
22.5%
Mounting
Surface Mount
Mode Of Operation
1-Carrier N-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
934061172118
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
135 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz.
Table 1.
Typical RF performance at T
[1]
[2]
I
I
I
I
I
I
I
I
I
I
Mode of operation
1-carrier N-CDMA
BLF6G27-135; BLF6G27LS-135
WiMAX power LDMOS transistor
Rev. 02 — 26 May 2008
Typical 1-carrier N-CDMA performance (Single carrier IS-95 with pilot, paging, sync
and 6 traffic channels [Walsh codes 8 to 13]. PAR = 9.7 dB at 0.01 % probability on the
CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 2500 MHz and
2700 MHz, a supply voltage of 32 V and an I
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2500 MHz to 2700 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
RF power amplifiers for base stations and multicarrier applications in the
2500 MHz to 2700 MHz frequency range
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 to 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
Measured within 30 kHz bandwidth.
N
N
N
N
Average output power = 20 W
Power gain = 16 dB
Drain efficiency = 22.5 %
ACPR
Typical performance
885k
[1]
= 52.0 dBc in 30 kHz bandwidth
f
(MHz)
2500 to 2700
case
= 25 C in a class-AB production test circuit.
V
(V)
32
DS
P
(W)
20
L(AV)
Dq
P
(W)
200
of 1200 mA:
L(p)
G
(dB) (%)
16
p
22.5
D
Product data sheet
ACPR
(dBc)
52
[2]
885k
ACPR
(dBc)
67
[2]
1980k

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BLF6G27LS-135,118 Summary of contents

Page 1

... BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 02 — 26 May 2008 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical RF performance at T Mode of operation 1-carrier N-CDMA [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 to 13). PAR = 9 ...

Page 2

... Symbol stg Thermal characteristics Table 5. Symbol R th(j-case) BLF6G27-135_BLF6G27LS-135_2 Product data sheet BLF6G27-135; BLF6G27LS-135 Pinning Description drain gate source drain gate source Ordering information Package Name Description - flanged LDMOST ceramic package; 2 mounting holes; 2 leads - earless flanged LDMOST ceramic package; 2 leads Limiting values ...

Page 3

... L(M) [1] Measured within 30 kHz bandwidth. [2] Measured at 2.7 GHz and 3 dB compression of the CCDF at 0.01 % probability. 7.1 Ruggedness in class-AB operation The BLF6G27-135 and BLF6G27LS-135 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions BLF6G27-135_BLF6G27LS-135_2 Product data sheet BLF6G27-135 ...

Page 4

... EVM (%) 2.0 1.5 1.0 0 1200 mA 2600 MHz Fig 1. EVM as function of average load power; typical values BLF6G27-135_BLF6G27LS-135_2 Product data sheet BLF6G27-135; BLF6G27LS-135 30 subchannels; P Frame structure FCH 2 symbols 4 subchannels data 2 symbols 26 subchannels data 44 symbols 30 subchannels 001aah641 G (dB (W) L(AV) Fig 2. Rev. 02 — 26 May 2008 ...

Page 5

... 1200 mA; Single Carrier N-CDMA PAR = 9 0.01 % probability; IBW = 30 kHz. Fig 4. Power gain and drain efficiency as functions of frequency; typical values BLF6G27-135_BLF6G27LS-135_2 Product data sheet BLF6G27-135; BLF6G27LS-135 20 ACPR (dBc 1200 mA 2600 MHz 10 MHz f = 2600 MHz 20 MHz f = 2600 MHz 30 MHz Adjacent channel power ratio as function of average load power ...

Page 6

... 1200 mA; Single Carrier N-CDMA PAR = 9 0.01 % probability; Channel Bandwidth = 1.23 MHz; IBW = 30 kHz. ( 2500 MHz ( 2600 MHz ( 2700 MHz Fig 8. Power gain as function of load power; typical values BLF6G27-135_BLF6G27LS-135_2 Product data sheet BLF6G27-135; BLF6G27LS-135 001aah646 ACPR (%) (dBc (W) L (1) Low frequency component (2) High frequency component Fig 7 ...

Page 7

... C6, C7 multilayer ceramic chip capacitor C8 electrolytic capacitor L1 ferrite SMD bead R1 SMD resistor R2 SMD resistor BLF6G27-135_BLF6G27LS-135_2 Product data sheet BLF6G27-135; BLF6G27LS-135 BLF6G27-135 input-rev 1A 30RF35 NXP Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with thickness = 0.76 mm. See Table 9 for list of components ...

Page 8

... NXP Semiconductors Table 10. f (GHz) 2.5 2.6 2.7 BLF6G27-135_BLF6G27LS-135_2 Product data sheet BLF6G27-135; BLF6G27LS-135 Measured test circuit impedances 1.60 + j1.07 1.38 + j2.08 1.17 + j2.77 Rev. 02 — 26 May 2008 WiMAX power LDMOS transistor 1.44 + j1.86 1.17 + j2.80 0.97 + j3.41 © NXP B.V. 2008. All rights reserved. ...

Page 9

... UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.186 0.505 0.788 0.006 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502A Fig 11. Package outline SOT502A BLF6G27-135_BLF6G27LS-135_2 Product data sheet BLF6G27-135; BLF6G27LS-135 scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9.30 9 ...

Page 10

... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.186 0.505 0.788 0.006 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502B Fig 12. Package outline SOT502B BLF6G27-135_BLF6G27LS-135_2 Product data sheet BLF6G27-135; BLF6G27LS-135 scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9 ...

Page 11

... WCS WiMAX 11. Revision history Table 12. Revision history Document ID BLF6G27-135_BLF6G27LS-135_2 20080526 BLF6G27-135_BLF6G27LS-135_1 20080221 BLF6G27-135_BLF6G27LS-135_2 Product data sheet BLF6G27-135; BLF6G27LS-135 Abbreviations Description Complementary Cumulative Distribution Function Code Division Multiple Access Continuous Wave Error Vector Magnitude Frame Control Header Fast Fourier Transform Instantaneous BandWidth ...

Page 12

... For more information, please visit: For sales office addresses, please send an email to: BLF6G27-135_BLF6G27LS-135_2 Product data sheet BLF6G27-135; BLF6G27LS-135 [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...

Page 13

... NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com WiMAX power LDMOS transistor All rights reserved. Date of release: 26 May 2008 Document identifier: BLF6G27-135_BLF6G27LS-135_2 ...

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