BLF6G22-180PN,112 NXP Semiconductors, BLF6G22-180PN,112 Datasheet
BLF6G22-180PN,112
Specifications of BLF6G22-180PN,112
BLF6G22-180PN
BLF6G22-180PN
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BLF6G22-180PN,112 Summary of contents
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... BLF6G22-180PN Power LDMOS transistor Rev. 02 — 23 April 2008 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 0.01 % probability on CCDF per carrier; ...
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... RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 MHz to 2200 MHz frequency range 2. Pinning information Table 2. Pin [1] Connected to flange. 3. Ordering information Table 3. Type number BLF6G22-180PN - 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T case ...
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... Mode of operation: 1-carrier W-CDMA; PAR 7 0.01 % probability on CCDF; 3GPP test model PDPCH 1600 mA Symbol Parameter PAR O 7.1 Ruggedness in class-AB operation The BLF6G22-180PN is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 1600 mA BLF6G22-180PN_2 Product data sheet Characteristics Conditions ...
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... MHz One-tone CW power gain and drain efficiency as functions of load power; typical values 001aah633 50 D (%) IMD (dBc 200 300 P (W) L(PEP) = 2170 MHz; 1 Fig 3. Rev. 02 — 23 April 2008 BLF6G22-180PN Power LDMOS transistor 001aah632 60 D (%) 100 150 200 P ( IMD3 30 IMD5 IMD7 100 ...
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... Fig 5. 001aah637 35 D ACPR, (%) IMD3 30 (dBc (W) L(AV) = 2157.5 MHz; 1 Fig 7. Rev. 02 — 23 April 2008 BLF6G22-180PN Power LDMOS transistor 1600 mA 2162.5 MHz 2167.5 MHz; carrier spacing 5 MHz. 2 2-carrier W-CDMA adjacent channel power ratio as function of average load power; typical values 20 30 IMD3 ACPR ...
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... Fig 8. BLF6G22-180PN_2 Product data sheet See Table 9 for list of components. Test circuit for operation at 2110 MHz and 2170 MHz Rev. 02 — 23 April 2008 BLF6G22-180PN Power LDMOS transistor C10 C11 R2 C12 R3 C14 C15 C16 output 50 C13 001aah639 © NXP B.V. 2008. All rights reserved. ...
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... ATC multilayer ceramic chip capacitor ATC multilayer ceramic chip capacitor chip resistor chip resistor Rev. 02 — 23 April 2008 BLF6G22-180PN Power LDMOS transistor C10 C11 C13 C12 OUTPUT C14 C15 C16 TB BLF6G22-180PN 001aah640 = 3.5 and thickness = 0.76 mm. r Value Remarks [ 4.7 F 220 nF [ 220 100 nF [ [1] 0 ...
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... H 31.52 9.50 9.53 1.75 17.12 25.53 13.72 30.96 9.30 9.27 1.50 16.10 25.27 1.241 0.374 0.375 0.069 0.674 1.005 0.540 1.219 0.366 0.365 0.634 0.059 0.995 REFERENCES JEDEC EIAJ Rev. 02 — 23 April 2008 BLF6G22-180PN Power LDMOS transistor 3.73 3.30 2.31 41.28 10 ...
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... Power of the Dedicated Physical CHannel Radio Frequency Voltage Standing-Wave Ratio Wideband Code Division Multiple Access Data sheet status Product data sheet Preliminary data sheet Rev. 02 — 23 April 2008 BLF6G22-180PN Power LDMOS transistor Change notice Supersedes - BLF6G22-180PN_1 - - © NXP B.V. 2008. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 23 April 2008 BLF6G22-180PN Power LDMOS transistor © NXP B.V. 2008. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF6G22-180PN_2 All rights reserved. Date of release: 23 April 2008 ...