BLF881,112 NXP Semiconductors, BLF881,112 Datasheet

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BLF881,112

Manufacturer Part Number
BLF881,112
Description
TRANSISTOR PWR UHF LDMOS SOT467C
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF881,112

Transistor Type
LDMOS
Frequency
860MHz
Gain
21dB
Voltage - Rated
104V
Voltage - Test
50V
Package / Case
SOT467C
Application
UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
104V
Output Power (max)
140W(Typ)
Power Gain (typ)@vds
21@50VdB
Frequency (max)
860MHz
Package Type
LDMOST
Pin Count
3
Drain Source Resistance (max)
210(Typ)@6.15Vmohm
Input Capacitance (typ)@vds
100@50VpF
Output Capacitance (typ)@vds
33.5@50VpF
Reverse Capacitance (typ)
1@50VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
49%
Mounting
Screw
Mode Of Operation
2-Tone Class-AB/DVB-T
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Power - Output
-
Noise Figure
-
Current - Test
-
Lead Free Status / Rohs Status
Compliant
Other names
934063947112

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLF881,112
Manufacturer:
FLOETH
Quantity:
450
1. Product profile
CAUTION
1.1 General description
1.2 Features and benefits
A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent
ruggedness and broadband performance of this device makes it ideal for digital
transmitter applications.
Table 1.
RF performance at V
[1]
Mode of operation
2-tone, class AB
DVB-T (8k OFDM)
BLF881; BLF881S
UHF power LDMOS transistor
Rev. 3 — 7 December 2010
2-Tone performance at 860 MHz, a drain-source voltage V
drain current I
DVB performance at 858 MHz, a drain-source voltage V
drain current I
Integrated ESD protection
Excellent ruggedness
High power gain
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Peak envelope power load power = 140 W
Power gain = 21 dB
Drain efficiency = 49 %
Third order intermodulation distortion = −34 dBc
Average output power = 33 W
Power gain = 21 dB
Drain efficiency = 34 %
Shoulder distance = −33 dBc (4.3 MHz from center frequency)
Typical performance
Dq
Dq
DS
= 0.5 A:
= 0.5 A:
f
(MHz)
f
858
1
= 50 V in a common-source 860 MHz test circuit.
= 860; f
2
= 860.1
P
(W) (W)
-
-
L
P
140
-
L(PEP)
P
(W)
-
33
L(AV)
DS
G
(dB) (%) (dBc) (dBc)
21
21
DS
of 50 V and a quiescent
p
of 50 V and a quiescent
Product data sheet
η
49
34
D
IMD3
−34
-
IMD
-
−33
[1]
shldr

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BLF881,112 Summary of contents

Page 1

BLF881; BLF881S UHF power LDMOS transistor Rev. 3 — 7 December 2010 1. Product profile 1.1 General description A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF ...

Page 2

... NXP Semiconductors High efficiency Excellent reliability Easy power control Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Communication transmitter applications in the UHF band Industrial applications in the UHF band 2. Pinning information Table 2. Pin BLF881 (SOT467C BLF881S (SOT467B [1] Connected to flange. 3. Ordering information Table 3 ...

Page 3

... NXP Semiconductors 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg Thermal characteristics Table 5. Symbol R th(j-c) [1] R th(j-c) 6. Characteristics Table 6. DC characteristics ° unless otherwise specified. j Symbol Parameter V drain-source breakdown voltage (BR)DSS V gate-source threshold voltage ...

Page 4

... NXP Semiconductors Table 7. RF characteristics …continued ° unless otherwise specified. h Symbol Parameter DVB-T (8k OFDM) V drain-source voltage DS I quiescent drain current Dq P average output power L(AV) G power gain p η drain efficiency D IMD intermodulation distortion shoulder shldr PAR peak-to-average ratio [1] Measured [dBc] with delta marker at 4.3 MHz from center frequency. ...

Page 5

... NXP Semiconductors 7. Application information 7.1 Narrowband RF figures 7.1.1 CW Fig 2. 7.1.2 2-Tone (dB η 0.5 A; measured in a common-source DS Dq narrowband 860 MHz test circuit. Fig 3. 2-Tone power gain and drain efficiency as function of average load power; typical values BLF881_BLF881S Product data sheet (dB η 0.5 A; measured in a common-source narrowband 860 MHz test circuit. ...

Page 6

... NXP Semiconductors 7.1.3 DVB (dB η 0.5 A; measured in a common-source DS Dq narrowband 860 MHz test circuit. Fig 5. DVB-T power gain and drain efficiency as function of average load power; typical values BLF881_BLF881S Product data sheet 001aal078 70 η D IMD shldr (%) (dBc) 60 −10 50 − −30 20 −40 10 − ...

Page 7

... NXP Semiconductors 7.2 Broadband RF figures 7.2.1 DVB-T 9.0 PAR (dB) 8.0 7.0 6.0 400 500 600 0. common-source broadband test circuit as described in Section 8. Fig 7. DVB-T PAR at 0.01 % probability on the CCDF and drain efficiency as function of frequency; typical values 7.3 Ruggedness in class-AB operation The BLF881 and BLF881S are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 860 MHz at rated power ...

Page 8

... NXP Semiconductors 7.4 Reliability Years (1) T (2) T (3) T (4) T (5) T (6) T (7) T (8) T (9) T (10) T (11) T Fig 9. BLF881_BLF881S Product data sheet (1) (2) ( (7) ( TTF (0.1 % failure fraction). The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) × δ. = 100 ° 110 ° 120 ° ...

Page 9

... NXP Semiconductors 8. Test information Table 8. List of components For test circuit, see Figure 10, Figure 11 Component Description C1, C2 multilayer ceramic chip capacitor C3, C4 multilayer ceramic chip capacitor C5 multilayer ceramic chip capacitor C6 multilayer ceramic chip capacitor C7 multilayer ceramic chip capacitor C8, C9, C10, C25, multilayer ceramic chip capacitor ...

Page 10

L23 C25 L22 C24 See Table 8 for a list of components. Fig 10. Class-AB common-source broadband amplifier C11 C12 C27 C26 C20 C1 C3 L21 L20 L1 L2 C23 C22 C21 ...

Page 11

... NXP Semiconductors 40 mm Fig 11. Printed-Circuit Board (PCB) for class-AB common source amplifier BLF881_BLF881S Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 7 December 2010 BLF881; BLF881S UHF power LDMOS transistor 40 mm 001aaj289 © NXP B.V. 2010. All rights reserved. ...

Page 12

... NXP Semiconductors C26 L23 C25 C24 C23 L23 See Table 8 for a list of components. Fig 12. Component layout for class-AB common source amplifier BLF881_BLF881S Product data sheet R2 C27 L6 R1 C20 C22 L20 L21 C21 L7 All information provided in this document is subject to legal disclaimers. Rev. 3 — 7 December 2010 BLF881 ...

Page 13

... NXP Semiconductors 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT 4.67 5.59 0.15 9.25 mm 3.94 5.33 0.10 9.04 0.364 0.184 0.220 0.006 inch 0.155 0.210 0.004 0.356 OUTLINE VERSION ...

Page 14

... NXP Semiconductors Earless LDMOST ceramic package; 2 leads H Dimensions (1) Unit max 4.67 5.59 0.15 9.25 mm nom min 3.94 5.33 0.10 9.04 max 0.184 0.22 0.006 0.364 inches nom min 0.155 0.21 0.004 0.356 Note 1. millimeter dimensions are derived from the original inch dimensions. ...

Page 15

... NXP Semiconductors 10. Abbreviations Table 9. Acronym CW CCDF DVB DVB-T ESD HF IMD3 LDMOS LDMOST OFDM PAR PEP RF TTF UHF VSWR 11. Revision history Table 10. Revision history Document ID Release date BLF881_BLF881S v.3 20101207 • Modifications: Table 6 on page BLF881_BLF881S v.2 20100210 BLF881_BLF881S v.1 20091210 BLF881_BLF881S ...

Page 16

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or ...

Page 17

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 18

... NXP Semiconductors 14. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Application information 7.1 Narrowband RF figures . . . . . . . . . . . . . . . . . . 5 7.1 7.1.2 2-Tone 7.1.3 DVB 7.2 Broadband RF figures . . . . . . . . . . . . . . . . . . . 7 7 ...

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