TRANS LDMOS 3.5GHZ SOT502B

 

BLS6G3135-120,112

Manufacturer Part NumberBLS6G3135-120,112
DescriptionTRANS LDMOS 3.5GHZ SOT502B
ManufacturerNXP Semiconductors
BLS6G3135-120,112 datasheets

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Specifications of BLS6G3135-120,112

Package / CaseSOT502ATransistor TypeLDMOS
Frequency3.1GHz ~ 3.5GHzGain11dB
Voltage - Rated60VCurrent Rating7.2A
Current - Test100mAVoltage - Test32V
Power - Output130WConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.16 Ohms
Drain-source Breakdown Voltage60 VGate-source Breakdown Voltage13 V
Continuous Drain Current7.2 AMaximum Operating Temperature+ 225 C
Mounting StyleSMD/SMTMinimum Operating Temperature- 65 C
Lead Free Status / RoHS StatusLead free / RoHS CompliantNoise Figure-
Other names934060063112
BLS6G3135-120
BLS6G3135-120		  
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BLS6G3135-120;
BLS6G3135S-120
LDMOS S-Band radar power transistor
Rev. 02 — 29 May 2008
1. Product profile
1.1 General description
120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz
range.
Table 1.
Typical RF performance at T
production test circuit.
Mode of operation
pulsed RF
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I
Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage
of 32 V, an I
N
Output power = 120 W
N
Gain = 11 dB
N
Efficiency = 43 %
I
Easy power control
I
Integrated ESD protection
I
Excellent ruggedness
I
High efficiency
I
Excellent thermal stability
I
Designed for broadband operation (3.1 GHz to 3.5 GHz)
I
Internally matched for ease of use
I
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
Typical performance
= 25 C; t
= 300 s; = 10 %; I
case
p
f
V
DS
(GHz)
(V)
3.1 to 3.5
32
of 100 mA, a t
of up to 300 s with of 10 %:
Dq
p
Product data sheet
= 100 mA; in a class-AB
Dq
P
G
t
L
p
D
r
(W)
(dB)
(%)
(ns)
120
11
43
20
t
f
(ns)
6

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BLS6G3135-120,112 Summary of contents

  • Page 1

    ... BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Rev. 02 — 29 May 2008 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical RF performance at T production test circuit. Mode of operation pulsed RF CAUTION This device is sensitive to ElectroStatic Discharge (ESD) ...

  • Page 2

    ... Pinning information Table 2. Pin BLS6G3135-120 (SOT502A BLS6G3135S-120 (SOT502B [1] Connected to flange 3. Ordering information Table 3. Type number BLS6G3135-120 BLS6G3135S-120 - 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLS6G3135-120_6G3135S-120_2 Product data sheet BLS6G3135-120; BLS6G3135S-120 Pinning ...

  • Page 3

    ... DSX I gate leakage current GSS g forward transconductance fs R drain-source on-state DS(on) resistance 7. Application information Table 7. Mode of operation: pulsed RF unless otherwise specified class-AB production circuit. case Symbol IRL P L(1dB BLS6G3135-120_6G3135S-120_2 Product data sheet BLS6G3135-120; BLS6G3135S-120 Thermal characteristics Characteristics Conditions 180 8 6 Application information = 300 s ...

  • Page 4

    ... NXP Semiconductors Table 8. f GHz 3.1 3.2 3.3 3.4 3.5 Fig 1. Definition of transistor impedance 7.1 Ruggedness in class-AB operation The BLS6G3135-120 and BLS6G3135S-120 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions (dB 3 100 mA 300 120 W. ...

  • Page 5

    ... 100 mA 100 120 W. L Fig 6. Power gain and drain efficiency as functions of frequency; typical values BLS6G3135-120_6G3135S-120_2 Product data sheet BLS6G3135-120; BLS6G3135S-120 001aag825 160 ( (2) (W) 120 ( 120 160 P ( 3.1 GHz ( 3.3 GHz ( 3.5 GHz V Fig 5. Load power as a function of input power; ...

  • Page 6

    ... D (%) ( 3.1 GHz ( 3.3 GHz ( 3.5 GHz 100 mA 100 Fig 8. Drain efficiency as a function of load power; typical values BLS6G3135-120_6G3135S-120_2 Product data sheet BLS6G3135-120; BLS6G3135S-120 001aag829 160 (1) P (2) L (W) 120 ( 120 160 0 P ( 3.1 GHz ( 3.3 GHz ( 3.5 GHz Fig 9. Load power as a function of input power; ...

  • Page 7

    ... C1, C2, C4, C5, C6, C7, C8, C9, C11 C3 C10 C12 C13 [1] American Technical Ceramics type 100A or capacitor of same quality. [2] American Technical Ceramics type 700A or capacitor of same quality. BLS6G3135-120_6G3135S-120_2 Product data sheet BLS6G3135-120; BLS6G3135S-120 4-line 6.2 and thickness = 0.64 mm. Table 9 for list of components. List of components (see ...

  • Page 8

    ... OUTLINE VERSION IEC SOT502A Fig 11. Package outline SOT502A BLS6G3135-120_6G3135S-120_2 Product data sheet BLS6G3135-120; BLS6G3135S-120 scale 9.50 9.53 1.14 19.94 5.33 3 ...

  • Page 9

    ... OUTLINE VERSION IEC SOT502B Fig 12. Package outline SOT502B BLS6G3135-120_6G3135S-120_2 Product data sheet BLS6G3135-120; BLS6G3135S-120 scale 9.50 9.53 1.14 19.94 5.33 1 ...

  • Page 10

    ... Revision history Table 11. Revision history Document ID BLS6G3135-120_6G3135S-120_2 Modifications: BLS6G3135-120_6G3135S-120_1 BLS6G3135-120_6G3135S-120_2 Product data sheet BLS6G3135-120; BLS6G3135S-120 Abbreviations Description Laterally Diffused Metal Oxide Semiconductor Lateral Diffused Metal-Oxide Semiconductor Transistor Radio Frequency Short wave Band Voltage Standing-Wave Ratio Release date Data sheet status ...

  • Page 11

    ... Contact information For additional information, please visit: For sales office addresses, send an email to: BLS6G3135-120_6G3135S-120_2 Product data sheet BLS6G3135-120; BLS6G3135S-120 [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...

  • Page 12

    ... NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com LDMOS S-Band radar power transistor All rights reserved. Date of release: 29 May 2008 Document identifier: BLS6G3135-120_6G3135S-120_2 ...

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