PD55008STR-E STMicroelectronics, PD55008STR-E Datasheet

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PD55008STR-E

Manufacturer Part Number
PD55008STR-E
Description
IC TRANS RF PWR LDMOST PWRSO-10
Manufacturer
STMicroelectronics
Datasheet

Specifications of PD55008STR-E

Transistor Type
LDMOS
Frequency
500MHz
Gain
17dB
Voltage - Rated
40V
Current Rating
4A
Current - Test
150mA
Voltage - Test
12.5V
Power - Output
8W
Package / Case
PowerSO-10 Exposed Bottom Pad
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
4A
Drain Source Voltage (max)
40V
Output Power (max)
8W
Power Gain (typ)@vds
17dB
Frequency (max)
1GHz
Package Type
PowerSO-10RF (Straight lead)
Pin Count
4
Forward Transconductance (typ)
1.6S
Input Capacitance (typ)@vds
58@12.5VpF
Output Capacitance (typ)@vds
38@12.5VpF
Reverse Capacitance (typ)
2.8@12.5VpF
Operating Temp Range
-65C to 165C
Drain Efficiency (typ)
55%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
52800mW
Vswr (max)
20(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PD55008STR-E
Manufacturer:
ST
Quantity:
20 000
Features
Description
The device is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It
operates at 12 V in common source mode at
frequencies up to 1 GHz.
The device boasts the excellent gain, linearity and
reliability of ST’s latest LDMOS technology
mounted in the first true SMD plastic RF power
package, PowerSO-10RF. The device’s superior
linearity performance makes it an ideal solution
for car mobile radio.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note
AN1294).
Table 1.
May 2010
Excellent thermal stability
Common source configuration
P
New RF plastic package
OUT
= 8 W with 17dB gain @ 500 MHz/12.5 V
PD55008STR-E
PD55008TR-E
PD55008S-E
Order code
PD55008-E
Device summary
N-channel enhancement-mode, lateral MOSFETs
RF POWER transistor, LdmoST plastic family
PowerSO-10RF (straight lead)
PowerSO-10RF (straight lead)
PowerSO-10RF (formed lead)
PowerSO-10RF (formed lead)
Doc ID 12259 Rev 2
Package
Figure 1.
Gate
Pin connection
PowerSO-10RF
PowerSO-10RF
(straight lead)
(formed lead)
PD55008S-E
Tape and reel
Tape and reel
PD55008-E
Packing
Tube
Tube
Source
Drain
www.st.com
1/25
25

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PD55008STR-E Summary of contents

Page 1

... Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294). Table 1. Device summary Order code PD55008-E PD55008S-E PD55008TR-E PD55008STR-E May 2010 RF POWER transistor, LdmoST plastic family Figure 1. Gate Package PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) ...

Page 2

Contents Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

PD55008-E, PD55008S-E 1 Electrical data 1.1 Maximum ratings Table 2. Absolute maximum ratings (T Symbol V (BR)DSS DISS STG 1.2 Thermal data Table 3. Thermal data Symbol R thJC CASE Parameter Drain-source ...

Page 4

Electrical characteristics 2 Electrical characteristics +25 C CASE 2.1 Static Table 4. Static Symbol DSS GSS GS( ...

Page 5

PD55008-E, PD55008S-E 3 Impedance Figure 2. Current conventions Table 7. Impedance data Freq. (MHz) 480 1.141 - j 2.054 500 1.589 - j 1.185 520 1.649 - j 1.965 800 1. 0.54 850 1. 1.00 900 ...

Page 6

Typical performance 4 Typical performance Figure 3. Capacitance vs. drain voltage 1000 f=1 MHz 100 VDD, DRAIN VOLTAGE (V) Figure 5. Gate-source voltage vs. case temperature 1.06 1.04 1.02 1 0.98 0. ...

Page 7

PD55008-E, PD55008S-E 4.1 PD55008-E Figure 6. Output power vs. input power 14 480 MHz 0.1 0.2 0.3 0.4 0.5 Pin, INPUT POWER (W) Figure 8. Drain efficiency vs. output power 80 520 ...

Page 8

Typical performance Figure 12. Output power vs. supply voltage 500 MHz VDD, SUPPLY VOLTAGE (V) Figure 14. Output power vs. gate-source voltage ...

Page 9

PD55008-E, PD55008S-E 4.2 PD54003S-E Figure 17. Output power vs. input power 14 500 MHz 12 480 MHz 0.1 0.2 Pin, INPUT POWER (W) Figure 19. Drain efficiency vs. output power ...

Page 10

Typical performance Figure 23. Output power vs. supply voltage 480 MHz 520 MHz VDD, SUPPLY VOLTAGE (V) Figure 25. Output power vs. supply voltage 12 ...

Page 11

PD55008-E, PD55008S-E 5 Test circuit Figure 26. Test circuit schematic Table 9. Test circuit component part list Component B1, B2 C1, C12 C2,C3,C10,C11 C4 C5,C16 C6,C13 C7, C14 C8,C15 ...

Page 12

Test circuit Table 9. Test circuit component part list (continued) Component Z8 Z9 Z10 Board 12/25 0.266” X 0.080” microstrip 1.113” X 0.080” microstrip 0.433” X 0.080” microstrip Roger ultra lam 2000 THK 0.030” Doc ID 12259 Rev 2 PD55008-E, ...

Page 13

PD55008-E, PD55008S-E 6 Circuit layout Figure 27. Test fixture component layout Figure 28. Test circuit photomaster Doc ID 12259 Rev 2 Circuit layout 13/25 ...

Page 14

Common source s-parameter 7 Common source s-parameter Table 10. S-parameter for PD55008-E (V Freq < Φ (MHz) 50 0.781 -141 100 0.784 -157 150 0.803 -162 200 0.830 -165 250 0.852 -167 300 0.873 -169 ...

Page 15

PD55008-E, PD55008S-E Table 11. S-parameter PD55003-E (V Freq < Φ (MHz) 50 0.832 -156 100 0.833 -167 150 0.839 -171 200 0.851 -172 250 0.851 -174 300 0.861 -174 350 0.872 -175 400 0.883 -176 ...

Page 16

Common source s-parameter Table 12. S-parameter for PD55003-E (V Freq < Φ (MHz) 50 0.797 -161 100 0.824 -168 150 0.849 -171 200 0.861 -173 250 0.870 -175 300 0.879 -175 350 0.887 -176 400 ...

Page 17

PD55008-E, PD55008S-E Table 13. S-parameter for PD55003S-E (V Freq < Φ (MHz) 50 0.753 -146 100 0.781 -159 150 0.812 -163 200 0.834 -166 250 0.856 -168 300 0.873 -169 350 0.887 -170 400 0.902 ...

Page 18

Common source s-parameter Table 14. S-parameter for PD55003S-E (V Freq < Φ (MHz) 50 0.862 -157 100 0.861 -168 150 0.869 -171 200 0.872 -173 250 0.879 -174 300 0.888 -175 350 0.894 -175 400 ...

Page 19

PD55008-E, PD55008S-E Table 15. S-parameter for PD55008S-E (V Freq < Φ (MHz) 50 0.821 -162 100 0.849 -169 150 0.875 -171 200 0.885 -173 250 0.892 -175 300 0.895 -175 350 0.901 -176 400 0.909 ...

Page 20

Package mechanical data 8 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available ...

Page 21

PD55008-E, PD55008S-E Table 16. PowerSO-10RF formed lead (Gull Wing) mechanical data Dim Note: Resin protrusions not included (max value: ...

Page 22

Package mechanical data Figure 30. Tube information 22/25 Doc ID 12259 Rev 2 PD55008-E, PD55008S-E ...

Page 23

PD55008-E, PD55008S-E Figure 31. Reel information Doc ID 12259 Rev 2 Package mechanical data 23/25 ...

Page 24

Revision history 9 Revision history Table 17. Document revision history Date 07-Apr-2006 20-May-2010 24/25 Revision 1 Initial release. 2 Added: Table 6: Moisture sensitivity Doc ID 12259 Rev 2 PD55008-E, PD55008S-E Changes level. ...

Page 25

... PD55008-E, PD55008S-E Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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