TRANSISTOR RF PWR LDMOST M252

SD56120M

Manufacturer Part NumberSD56120M
DescriptionTRANSISTOR RF PWR LDMOST M252
ManufacturerSTMicroelectronics
SD56120M datasheet
 


Specifications of SD56120M

Transistor TypeLDMOSFrequency860MHz
Gain16dBVoltage - Rated65V
Current Rating14ACurrent - Test400mA
Voltage - Test32VPower - Output120W
Package / CaseM252Lead Free Status / RoHS StatusLead free / RoHS Compliant
Noise Figure-Other names497-5473-5
SD56120M
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N-Channel enhancement-mode lateral MOSFETs
General features
Excellent thermal stability
Common source configuration Push-pull
P
= 120W with 13dB gain @ 860MHz / 32V
OUT
BeO free package
Internal input matching
Description
The SD56120M is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The SD56120M is designed for high
gain and broadband performance operating in
common source mode at 32 V. Its internal
matching makes it ideal for TV broadcast
applications requiring high linearity.
Order codes
Part number
SD56120M
July 2006
RF POWER Transistors, LDMOST plastic family
Pin connection
Package
M252
Rev 10
SD56120M
M252
Epoxy sealed
1
2
3
5
4
1. Drain
4. Gate
2. Drain
5. Gate
3. Source
Branding
SD56120M
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www.st.com
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SD56120M Summary of contents

  • Page 1

    ... The SD56120M is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD56120M is designed for high gain and broadband performance operating in common source mode Its internal matching makes it ideal for TV broadcast applications requiring high linearity ...

  • Page 2

    ... Contents Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Impedances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 SD56120M ...

  • Page 3

    ... SD56120M 1 Electrical data 1.1 Maximum ratings Table 1. Absolute maximum ratings (T Symbol V (BR)DSS DISS Tj T STG 1.2 Thermal data Table 2. Thermal data Symbol R thJC CASE Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70°C) Max. Operating Junction Temperature Storage Temperature ...

  • Page 4

    ... MHz MHz DS Test conditions = 400 860MHz DQ = 400 120 W,f = 860MHz DQ OUT = 400 120 W,f = 860MHz DQ OUT = 400 120 W,f = 860MHz DQ OUT SD56120M Min Typ Max 2.0 5.0 0.7 0 MHz 221 48.9 2.25 Min Typ Max 120 10:1 Unit V µA µ mho ...

  • Page 5

    ... SD56120M 3 Impedances Figure 1. Current conventions Table 5. Impedance data Freq. (MHz) 860 MHz Note: Measured drain to drain and gate to gate respectively. Z (Ω 3.488 Impedances Z (Ω 2.88 5/14 ...

  • Page 6

    ... Vgs, GATE-SOURCE VOLTAGE (V) 6/14 Figure 3. 1.03 Ciss 1.02 1.01 Coss 1 0.99 0.98 Crss 0.97 0.96 - Figure 5. 180 160 140 120 100 Gate-source voltage vs case temperature Tc, CASE TEMPERATURE (°C) Output power & efficiency vs input power P out Idq 200 860 Pin, INPUT POWER (W) SD56120M 100 ...

  • Page 7

    ... SD56120M Figure 6. Power gain vs output power 20 19 Idq = 2 x 600m A Idq = 2 x 400m A 18 Idq = 2 x 300m A 17 Idq = 2 x 200m Pout, OUTPUT POWER (W) Figure 8. Output power vs drain voltage 210 180 Vdd = 32 V Idq = 2 x 200 860 M Hz 150 120 90 60 ...

  • Page 8

    ... Typical performance Figure 9. Test circuit schematic 1 C3 and C4 adjacent to each other 2 Gap between ground & transmission line = 0.056 [1.42] TYP. 8/14 D SD56120M ...

  • Page 9

    ... SD56120M Table 6. Test circuit component part list Component C1, C2, C10, C11 C3 C4 C12, C15, C18, C22 91 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR C13, C16, C20, C24 10 µF 50V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR C14, C17, C21, C25 0.1 µF 500V SURFACE MOUNT CERAMIC CHIP CAPACITOR ...

  • Page 10

    ... Typical performance Figure 10. Test fixture Figure 11. Test circuit photomaster 10/14 6.4 inches SD56120M ...

  • Page 11

    ... SD56120M 5 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

  • Page 12

    ... SD56120M Inch Min Typ Max .320 .340 .425 .118 .130 .380 .390 .085 .115 .865 .875 1.100 1.335 1.345 .004 .006 ...

  • Page 13

    ... SD56120M 6 Revision history Table 8. Revision history Date 13-Jul-2006 Revision 10 New template, added lead free info Revision history Changes 13/14 ...

  • Page 14

    ... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 14/14 Please Read Carefully: © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com SD56120M ...