TRANSISTOR RF PWR LDMOST M252

SD57120

Manufacturer Part NumberSD57120
DescriptionTRANSISTOR RF PWR LDMOST M252
ManufacturerSTMicroelectronics
SD57120 datasheet
 


Specifications of SD57120

Transistor TypeLDMOSFrequency960MHz
Gain14dBVoltage - Rated65V
Current Rating14ACurrent - Test800mA
Voltage - Test28VPower - Output120W
Package / CaseM252Lead Free Status / RoHS StatusLead free / RoHS Compliant
Noise Figure-Other names497-5481-5
SD57120
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Features
Excellent thermal stability
Common source configuration push-pull
P
= 120W with 13dB gain @ 960MHz
OUT
BeO free package
Internal input matching
In compliance with the 2002/95/EC european
directive
Description
The SD57120 is a common source N-channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The SD57120 is designed for high gain
and broadband performance operating in
common source mode at 28V. Its internal
matching makes it ideal for base station
applications requiring high linearity.
Table 1.
Device summary
Order code
SD57120
August 2007
RF power transistor
the LdmoST family
M252
Epoxy sealed
Figure 1.
Pin connection
1
5
1. Drain
2. Drain
3. Source
Package
M252
Rev 8
SD57120
2
3
4
4. Gate
5. Gate
Branding
SD57120
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www.st.com
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SD57120 Summary of contents

  • Page 1

    ... The SD57120 is a common source N-channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57120 is designed for high gain and broadband performance operating in common source mode at 28V. Its internal matching makes it ideal for base station applications requiring high linearity ...

  • Page 2

    ... Contents Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 6 Text circuit layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 7 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/13 SD57120 ...

  • Page 3

    ... SD57120 1 Electrical data 1.1 Maximum ratings Table 2. Absolute maximum ratings (T Symbol V (BR)DSS DISS STG 1.2 Thermal data Table 3. Thermal data Symbol R thJC CASE Parameter Drain-source voltage Gate-source voltage Drain current Power dissipation (@ Tc = 70°C) Max. operating junction temperature Storage temperature Parameter ...

  • Page 4

    ... Test conditions 100 MHz MHz MHz DS Test conditions I = 800 960MHz 800 120W f = 960MHz DQ OUT I = 800 120W f = 960MHz DQ OUT I = 800 120W f = 960MHz DQ OUT SD57120 Min Typ Max Unit 65 V µA 1 µA 1 2.0 5.0 V 0.7 0 169 2.7 pF Min Typ Max Unit 120 VSW 10:1 R ...

  • Page 5

    ... SD57120 3 Impedance Figure 2. Current conventions Table 6. Impedance data Freq. (MHz) 945 MHz 960 MHz 980 MHz Note: Measured gateto gate and drain to drain respectively. Z (Ω 4.9 4 4.6 3 5.2 Impedance Z (Ω 5.1 3. 4.74 3. 6.9 5/13 ...

  • Page 6

    ... Vdd= 28V Idq= 800mA Idq= 200mA f1= 960MHz -30 f2= 960.1MHz Pin= 2.5WPEP Idq= 1200mA -35 -40 Idq= 400mA -45 1000 10 SD57120 Power gain vs output power f= 960MHz Vdd= 28V 10 100 Pout, OUTPUT POWER (W) Intermodulation distortion vs output power Vdd= 28V Idq= 800mA f1= 960MHz f2= 960.1MHz Pin= 2.5WPEP ...

  • Page 7

    ... SD57120 Table 8. Output power vs gate voltage 160 140 120 100 Vgs, GATE-SOURCE VOLTAGE (V) Figure 7. Capacitance vs drain voltage 1000 f= 1MHz 100 10 Ciss includesinput matching capacitors Vds, DRAIN SOURCE VOLTAGE (V) Figure 6. 200 f= 960MHz 150 Idq= 800mA 100 f= 960MHz Pin= 4.8W 50 Vdd= 28V Figure 8. ...

  • Page 8

    ... Z6, Z7 0.450x0.608 11.43x15.44 Z8, Z9 0.430x0.801 10.92x20.34 Z10, Z11 0.252x0.525 6.40x13.34 TL1, TL2 0.084x2.2 2.13x55.88 FB6 C32 C33 C34 C35 L4 BALUN2 C15 Z11 C11 C12 C13 Z12 C14 Z10 TL2 L3 FB5 C26 C27 C28 C29 SD57120 WxL (mm) 2.13xTYP VDD RF OUTPUT VDD ...

  • Page 9

    ... SD57120 Table 9. Test circuit component part list Component BF1-BF4 L1,L2,L3,L4 B1, B2 R1,R2 R3,R5 R4,R6 C1,C2,C14,C15 C3,C4 C5,C12 C6,C7,C11 C8,C9 C10,C13 C16,C17,C20,C21, C24,C25,C30,C31 C18,C22 C19,C23,C27,C28, C32,C34 C26,C33 C29,C35 BOARD Description SURFACE MOUNT EMI SHIELD BEAD INDUCTOR, 3 TURN AIR-WOUND #20AWG ID=0.126[3.20] 24.7nH MAGNET WIRE BALUN, 50 OHM SUCOFORM ...

  • Page 10

    ... Text circuit layout 6 Text circuit layout Figure 10. 960MHz production test fixture Figure 11. 960MHz test circuit photomaster 10/13 6.4 inches SD57120 ...

  • Page 11

    ... SD57120 7 Package mechanical data Table 10. M252 (.400 x .860 4L BAL N/HERM W/FLG) mechanical data Dim Figure 12. Package dimensions Controlling dimension: Inches mm. Min Typ Max 8.13 8.64 10.80 3.00 3.30 9.65 9.91 2.16 2.92 21.97 22.23 27.94 33.91 34.16 0.10 0.15 1.52 1.78 2 ...

  • Page 12

    ... Revision history 8 Revision history Table 11. Document revision history Date 24-Mar-2003 11-Jul-2007 27-Aug-2007 12/13 Revision 6 First Issue. 7 Document reformatted, added lead free info 8 Cover page title updated SD57120 Changes ...

  • Page 13

    ... SD57120 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...