MRFG35003ANT1 Freescale Semiconductor, MRFG35003ANT1 Datasheet

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MRFG35003ANT1

Manufacturer Part Number
MRFG35003ANT1
Description
TRANSISTOR RF 3W 12V PLD-1.5
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRFG35003ANT1

Transistor Type
pHEMT FET
Frequency
3.55GHz
Gain
10.8dB
Voltage - Rated
15V
Current Rating
1.3A
Current - Test
55mA
Voltage - Test
12V
Power - Output
3W
Package / Case
PLD-1.5
Configuration
Single
Drain Source Voltage Vds
15 V
Gate-source Breakdown Voltage
- 5 V
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRFG35003ANT1
Manufacturer:
RFMD
Quantity:
5 000
© Freescale Semiconductor, Inc., 2007 - 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
Customer Premise Equipment (CPE) applications.
• Typical Single - Carrier W - CDMA Performance: V
• 3 Watts P1dB @ 3550 MHz, CW
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Drain- Source Voltage
Gate- Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature
Thermal Resistance, Junction to Case
Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized
55 mA, P
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Select Documentation/Application Notes - AN1955.
Power Gain — 10.8 dB
Drain Efficiency — 24.5%
ACPR @ 5 MHz Offset — - 43 dBc in 3.84 MHz Channel Bandwidth
out
= 300 mWatts Avg., 3550 MHz, Channel Bandwidth =
(1)
Characteristic
Rating
DD
= 12 Volts, I
DQ
=
Symbol
Symbol
V
R
V
T
T
P
DSS
θJC
GS
stg
ch
in
Document Number: MRFG35003AN
MRFG35003ANT1
CASE 466 - 03, STYLE 1
3.5 GHz, 3 W, 12 V
- 65 to +150
GaAs PHEMT
Value
POWER FET
Value
15.9
175
15
29
PLASTIC
- 5
PLD - 1.5
(2)
MRFG35003ANT1
Rev. 2, 6/2009
°C/W
Unit
dBm
Unit
Vdc
Vdc
°C
°C
1

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MRFG35003ANT1 Summary of contents

Page 1

... Freescale Semiconductor Document Number: MRFG35003AN MRFG35003ANT1 = 12 Volts Symbol V DSS stg T ch Symbol R θJC Rev. 2, 6/2009 3.5 GHz POWER FET GaAs PHEMT CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Value Unit 15 Vdc - 5 Vdc 29 dBm - 65 to +150 °C 175 °C (2) Value Unit 15.9 °C/W MRFG35003ANT1 1 ...

Page 2

... Single- Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. PAR = 8 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Typical RF Performance (In Freescale Test Fixture, 50 ohm system) V Output Power Compression Point, CW MRFG35003ANT1 2 Rating 3 = 25°C unless otherwise noted) A Symbol ...

Page 3

... Microstrip Z8 0.029″ x 0.146″ x 0.130″ Taper Z9, Z13 0.015″ x 0.527″ Microstrip Figure 1. MRFG35003ANT1 Test Circuit Schematic Table 6. MRFG35003ANT1 Test Circuit Component Designations and Values Part C1, C20 7.5 pF Chip Capacitors C2, C3, C11, C12 3.9 pF Chip Capacitors ...

Page 4

... C9 C8 C10 C1 C21 Figure 2. MRFG35003ANT1 Test Circuit Component Layout MRFG35003ANT1 4 C6 C15 C16 C17 C14 C7 C5 C13 C4 C24 C11 C12 MRFG35003AN Rev. 0 C18 C19 C20 C23 C22 RF Device Data Freescale Semiconductor ...

Page 5

... S L IRL ACPR OUTPUT POWER (dBm) out Figure 4. Single - Carrier W - CDMA ACPR and Input Return Loss versus Output Power and Γ are the impedances presented to the DUT −5 −10 −15 −20 −25 − MRFG35003ANT1 5 ...

Page 6

... MRFG35003ANT1 6 TYPICAL CHARACTERISTICS Vdc mA 3550 MHz DS DQ Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth PAR = 8 0.01% Probability (CCDF η OUTPUT POWER (dBm) out Figure 5. Single - Carrier W - CDMA Power Gain and Drain Efficiency versus Output Power ...

Page 7

... MHz Channel Bandwidth PAR = 9 0.01% Probability (CCDF) η D EVM OUTPUT POWER (dBm) out Figure 9. Single - Carrier OFDM EVM and Drain Efficiency versus Output Power NOTE: Data is generated from the test circuit shown 3600 3650 0 −5 −10 −15 −20 −25 3600 3650 MRFG35003ANT1 7 ...

Page 8

... Figure 10. Series Equivalent Source and Load Impedance MRFG35003ANT1 8 Z load 3550 MHz Z source f = 3550 MHz Vdc mA 300 mW Avg out source load MHz Ω Ω 3550 6.9 - j35.8 9.5 - j12 Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground ...

Page 9

... MRFG35003ANT1 9 ...

Page 10

... MRFG35003ANT1 Vdc mA 25°C, 50 Ω system) (continued ∠ φ 2.627 45.2 0.0391 2.594 44.4 0.0392 2 ...

Page 11

... MRFG35003ANT1 11 ...

Page 12

... MRFG35003ANT1 Vdc mA 25°C, 50 Ω system) (continued ∠ φ 1.650 - 35.3 0.0537 1.649 - 36.3 0.0539 1 ...

Page 13

... MRFG35003ANT1 13 ...

Page 14

... MRFG35003ANT1 Vdc mA 25°C, 50 Ω system) (continued ∠ φ 1.157 - 157.8 0.0584 1.147 - 159.3 0.0582 1 ...

Page 15

... MRFG35003ANT1 15 ...

Page 16

... ZONE W É É É É É É É É 1 É É É É É É É É É É É É É É É É ZONE X VIEW MRFG35003ANT1 16 PACKAGE DIMENSIONS " 0.35 (0.89 NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14 ...

Page 17

... June 2009 • Modified data sheet to reflect MSL rating change from result of the standardization of packing process as described in Product and Process Change Notification number, PCN13516 Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MRFG35003ANT1 17 ...

Page 18

... For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1 - 800- 441- 2447 303- 675- 2140 Fax 303- 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRFG35003ANT1 Document Number: MRFG35003AN Rev. 2, 6/2009 18 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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