MRF6V2010NR1 Freescale Semiconductor, MRF6V2010NR1 Datasheet
MRF6V2010NR1
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MRF6V2010NR1 Summary of contents
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... RF POWER MOSFETs CASE 1265- -09, STYLE 1 TO- -270- -2 PLASTIC MRF6V2010NR1 CASE 1337- -04, STYLE 1 TO- -272- -2 PLASTIC MRF6V2010NBR1 Symbol Value Unit V --0.5, +110 Vdc DSS V --0.5, +10 Vdc +150 °C stg T 150 ° 225 °C J (2,3) Symbol Value Unit R 3.0 °C/W θJC MRF6V2010NR1 MRF6V2010NBR1 1 ...
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... Incorrect mounting can lead to internal temperatures which exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263 (for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to ensure proper mounting of these devices. MRF6V2010NR1 MRF6V2010NBR1 2 Rating 3 = 25° ...
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... Microstrip Z5 0.293″ x 0.270″ Microstrip Z6 0.120″ x 0.270″ Microstrip Figure 1. MRF6V2010NR1(NBR1) Test Circuit Schematic Table 6. MRF6V2010NR1(NBR1) Test Circuit Component Designations and Values Part B1 Ω, 100 MHz Long Ferrite Beads C1, C8, C11, C18 1000 pF Chip Capacitors C2 10 μ ...
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... MRF6V2010N/NB Rev. 3 Figure 2. MRF6V2010NR1(NBR1) Test Circuit Component Layout MRF6V2010NR1 MRF6V2010NBR1 C12 R1 C11 C8 L1 C10 C9 C14 B2 C13 C15 L2 C16 C18 C17 L3 RF Device Data Freescale Semiconductor ...
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... Figure 8. CW Output Power versus Input Power = 25° DRAIN--SOURCE VOLTAGE (VOLTS) DS Figure 4. DC Safe Operating Area = Vdc 220 MHz OUTPUT POWER (WATTS) CW out P3dB = 40.87 dBm (12 Vdc 220 MHz INPUT POWER (dBm) in MRF6V2010NR1 MRF6V2010NBR1 100 200 10 20 Ideal Actual 23 5 ...
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... 220 MHz η 450 MHz η 450 MHz OUTPUT POWER (WATTS) CW out Figure 12. Power Gain and Drain Efficiency versus CW Output Power MRF6V2010NR1 MRF6V2010NBR1 6 TYPICAL CHARACTERISTICS 220 MHz Figure 10. Power Output versus Power Input --30_C --30_C C η 25_C D 85_C Vdc ...
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... MHz Ω 220 20 + j25 75 + j44 Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Input Device Under Matching Network Test Z Z source load Ω 220 MHz Z load Z load Ω Output Matching Network MRF6V2010NR1 MRF6V2010NBR1 7 ...
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... C10 Figure 15. MRF6V2010NR1(NBR1) Test Circuit Component Layout — 130 MHz Table 7. MRF6V2010NR1(NBR1) Test Circuit Component Designations and Values — 130 MHz Part B1 Ω, 100 MHz Long Ferrite Beads, Surface Mount C1, C5, C18, C19 1000 pF Chip Capacitors C2, C12 0.6--4.5 pF Variable Capacitors, Gigatrim ...
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... C10 C20 Figure 16. MRF6V2010NR1(NBR1) Test Circuit Component Layout — 450 MHz Table 8. MRF6V2010NR1(NBR1) Test Circuit Component Designations and Values — 450 MHz Part B1 Ω, 100 MHz Long Ferrite Beads, Surface Mount C1, C5, C12, C15 240 pF Chip Capacitors C2 Chip Capacitors C4, C11 2.2 μ Chip Capacitors C6, C16 0 ...
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... C11 C10 Figure 17. MRF6V2010NR1(NBR1) Test Circuit Component Layout — 64 MHz Table 9. MRF6V2010NR1(NBR1) Test Circuit Component Designations and Values — 64 MHz Part B1 Ω, 100 MHz Long Ferrite Beads, Surface Mount C1, C5, C15, C17 1000 pF Chip Capacitors Chip Capacitor C3, C14 22 pF Chip Capacitors C4, C16 2.2 μ ...
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... Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Matching Under Test Network Z Z source load f = 450 MHz Z load f = 220 MHz Z load f = 130 MHz Z load MHz Z load Z load Ω Output Matching Network MRF6V2010NR1 MRF6V2010NBR1 11 ...
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... MRF6V2010NR1 MRF6V2010NBR1 12 50 OHM TYPICAL CHARACTERISTICS ( mA 25°C, 50 Ohm System ∠ φ 11.520 175.6 0.000790 11.419 171.6 ...
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... ∠ φ ∠ φ 22 --31.1 0.932 --107.6 --32.1 0.934 --109.0 --33.1 0.935 --110.4 --33.8 0.936 --111.7 --34.8 0.938 --112.9 --35.9 0.939 --114.1 MRF6V2010NR1 MRF6V2010NBR1 13 ...
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... MRF6V2010NR1 MRF6V2010NBR1 14 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRF6V2010NR1 MRF6V2010NBR1 15 ...
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... MRF6V2010NR1 MRF6V2010NBR1 16 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRF6V2010NR1 MRF6V2010NBR1 17 ...
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... MRF6V2010NR1 MRF6V2010NBR1 18 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRF6V2010NR1 MRF6V2010NBR1 19 ...
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... Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related “Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C in Capable Plastic Package bullet • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software MRF6V2010NR1 MRF6V2010NBR1 20 REVISION HISTORY Description and Z values, Fig ...
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... Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007--2008, 2010. All rights reserved. MRF6V2010NR1 MRF6V2010NBR1 21 ...