MRFE6S8046GNR1 Freescale Semiconductor, MRFE6S8046GNR1 Datasheet
MRFE6S8046GNR1
Specifications of MRFE6S8046GNR1
Related parts for MRFE6S8046GNR1
MRFE6S8046GNR1 Summary of contents
Page 1
... PARTS ARE SINGLE - ENDED out out (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Figure 1. Pin Connections Symbol Value Unit V - 0.5, +66 Vdc DSS V - 6.0, +10 Vdc GS V 32, +0 Vdc +150 °C stg T 150 ° 225 °C J MRFE6S8046NR1 MRFE6S8046GNR1 ...
Page 2
... Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 3. Part internally matched both on input and output. 4. Measurement made with device in straight lead configuration before any lead forming operation is applied. MRFE6S8046NR1 MRFE6S8046GNR1 2 = 300 285 mA DQ ...
Page 3
... Vdc 285 mA 17 out Spectral Spectral Regrowth @ Regrowth @ 400 kHz 600 kHz D (dBc) (dBc) 61.2 70.9 63.4 72.5 63.7 73 MRFE6S8046NR1 MRFE6S8046GNR1 IRL (dB Unit W MHz MHz dB dB/°C dBm/°C EVM (% rms) 2 ...
Page 4
... C5 0.01 μF Chip Capacitor C6, C7 1.5 pF Chip Capacitors C8, C9 1.2 pF Chip Capacitors C10, C11 39 pF Chip Capacitors C12 6.8 pF Chip Capacitor C14 470 μF 63V Electrolytic Capacitor R1 4.7 KΩ, 1/4 W Chip Resistor MRFE6S8046NR1 MRFE6S8046GNR1 Z10 Z11 DUT C3 Z10 0.040″ x 0.450″ Microstrip Z11 0.321″ ...
Page 5
... R1 C1 MRFE6S8046GN/MRFE6S9046GN Rev. 2 Figure 3. MRFE6S8046NR1(GNR1) Reference Design Test Circuit Component Layout RF Device Data Freescale Semiconductor V GS C10 C11 C14 V DS C12 C13 V DS MRFE6S8046NR1 MRFE6S8046GNR1 5 ...
Page 6
... IM3−U −30 IM3−L −40 IM5−L IM5−U −50 IM7−L −60 IM7−U − TWO−TONE SPACING (MHz) Figure 6. Intermodulation Distortion Products versus Two - Tone Spacing MRFE6S8046NR1 MRFE6S8046GNR1 6 TYPICAL CHARACTERISTICS η Vdc 35 IRL out I = 300 mA DQ 880 ...
Page 7
... OUTPUT POWER (WATTS) out Figure 9. Spectral Regrowth at 400 kHz versus Output Power = 285 mA DQ η 894 MHz 880 MHz EVM 864 MHz OUTPUT POWER (WATTS) AVG. out versus Output Power 4 0 −4 −8 −12 −16 1250 1350 MRFE6S8046NR1 MRFE6S8046GNR1 864 MHz ...
Page 8
... Center 1.96 GHz Figure 14. Series Equivalent Source and Load Impedance MRFE6S8046NR1 MRFE6S8046GNR1 8 GSM TEST SIGNAL Reference Power VWB = 30 kHz Sweep Time = 70 ms RBW = 30 kHz 400 kHz 400 kHz 600 kHz 200 kHz Figure 13 ...
Page 9
... Z Z source (MHz) Ω 865 P1dB 2.08 - j5.40 4.39 - j2.89 880 P1dB 2.54 - j5.63 4.63 - j2.96 895 P1dB 3.31 - j6.08 4.42 - j3.30 Figure 15. Pulsed CW Output Power versus Input Power @ 28 V Ideal Actual 33 32 dBm 48.0 47.9 47.9 load Ω MRFE6S8046NR1 MRFE6S8046GNR1 9 ...
Page 10
... MRFE6S8046NR1 MRFE6S8046GNR1 10 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...
Page 11
... RF Device Data Freescale Semiconductor MRFE6S8046NR1 MRFE6S8046GNR1 11 ...
Page 12
... MRFE6S8046NR1 MRFE6S8046GNR1 12 RF Device Data Freescale Semiconductor ...
Page 13
... RF Device Data Freescale Semiconductor MRFE6S8046NR1 MRFE6S8046GNR1 13 ...
Page 14
... MRFE6S8046NR1 MRFE6S8046GNR1 14 RF Device Data Freescale Semiconductor ...
Page 15
... RF Device Data Freescale Semiconductor MRFE6S8046NR1 MRFE6S8046GNR1 15 ...
Page 16
... Software & Tools tab on the part’s Product Summary page to download the respective tool. The following table summarizes revisions to this document. Revision Date 0 May 2009 • Initial Release of Data Sheet MRFE6S8046NR1 MRFE6S8046GNR1 16 PRODUCT DOCUMENTATION REVISION HISTORY Description RF Device Data Freescale Semiconductor ...
Page 17
... Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2009. All rights reserved. MRFE6S8046NR1 MRFE6S8046GNR1 17 ...