MRFG35020AR1 Freescale Semiconductor, MRFG35020AR1 Datasheet

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MRFG35020AR1

Manufacturer Part Number
MRFG35020AR1
Description
TRANSISTOR RF 20W GAAS NI-360
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRFG35020AR1

Transistor Type
pHEMT FET
Frequency
3.5GHz
Gain
11.5dB
Voltage - Rated
15V
Current - Test
300mA
Voltage - Test
12V
Power - Output
20W
Package / Case
NI-360
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Noise Figure
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRFG35020AR1
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
BW requirement in the 2300- 3800 MHz frequency range. Suitable for TDMA and
CDMA amplifier applications. To be used in Class AB applications.
• Typical WiMAX Performance: V
• 20 Watts P1dB @ 3500 MHz, CW
Features
• Supports up to 28 MHz Bandwidth OFDM Signals
• Internally Input Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Excellent Thermal Stability
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
1. For reliable operation, the operating channel temperature should not exceed 150°C. Exceeding 150°C channel operating temperature may
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Drain - Source Voltage
Gate - Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature
Thermal Resistance, Junction to Case
Designed for WiMAX and WLL base station applications that have a 200 MHz
Avg., f = 3500 MHz, 802.16d, 64 QAM
Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.
result in device performance degradation.
Select Documentation/Application Notes - AN1955.
Power Gain — 11.5 dB
Drain Efficiency — 22%
RCE — - 33 dB
Meets ETSI Type G Mask
(1)
Characteristic
DD
Rating
= 12 Volts, I
3
/
4
, 4 bursts, 7 MHz Channel
DQ
= 300 mA, P
out
= 2 Watts
Symbol
Symbol
V
R
V
T
P
T
DSS
θJC
GS
stg
ch
in
Document Number: MRFG35020A
MRFG35020AR1
CASE 360E - 01, STYLE 2
3.5 GHz, 20 W, 12 V
NI - 360 SHORT LEAD
- 40 to +150
Value
GaAs PHEMT
POWER FET
Value
175
2.7
15
34
- 5
WiMAX
(2)
Rev. 1, 12/2008
MRFG35020AR1
°C/W
Unit
dBm
Unit
Vdc
Vdc
°C
°C
1

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MRFG35020AR1 Summary of contents

Page 1

... MHz Channel 4 Document Number: MRFG35020A Rev. 1, 12/2008 MRFG35020AR1 3.5 GHz WiMAX POWER FET GaAs PHEMT CASE 360E - 01, STYLE 360 SHORT LEAD Symbol Value Unit V 15 DSS dBm +150 stg T 175 ch (2) Symbol Value Unit R 2.7 °C/W θJC MRFG35020AR1 Vdc Vdc °C °C 1 ...

Page 2

... Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. PAR = 8 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Typical RF Performance (In Freescale Test Fixture, 50 ohm system) V Output Power Compression Point Measurements made with device in test fixture. MRFG35020AR1 2 = 25°C unless otherwise noted) C Symbol I DSO I ...

Page 3

... Microstrip 0.021″ x 0.713″ Microstrip Rogers 4350, 0.010″, ε = 3.5 r Part Number Manufacturer 08051J3R9BBS AVX ATC100A100JT150XT ATC ATC100A101JT150XT ATC ATC100B101JT500XT ATC ATC100B102JT50XT ATC ATC200B103KT50XT ATC ATC200B393KT50XT ATC GRM55DR61H106KA88B Murata 08051J1R8BBS AVX 08051J1R5BBS AVX CRCW12066R20FKEA Vishay MRFG35020AR1 3 ...

Page 4

... Figure 2. MRFG35020A Test Circuit Component Layout MRFG35020AR1 C17 C10 C13 C12 C11 C14 C15 C16 C18 MRFG35020A Rev Device Data Freescale Semiconductor ...

Page 5

... Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth Γ = 0.697é−153.9_, Γ = 0.949é−166. IRL ACPR OUTPUT POWER (dBm) out Figure 4. Single - Channel W - CDMA Adjacent and Γ are the impedances presented to the DUT −5 −10 −15 −20 −25 − MRFG35020AR1 5 ...

Page 6

... Single−Carrier W−CDMA, 3.84 MHz Channel 14 Bandwidth, Input Signal PAR = 8 0.01% Probability (CCDF 3400 Figure 7. Single - Channel W - CDMA Power Gain NOTE: Data is generated from the test circuit shown. MRFG35020AR1 6 TYPICAL CHARACTERISTICS G ps η Vdc 300 mA 3500 MHz Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 8 ...

Page 7

... FREQUENCY (MHz) Figure 8. Single - Channel W - CDMA Adjacent Vdc 300 mA 3500 MHz Single−Carrier OFDM 802.16d, 64 QAM 4 7 MHz Channel Bandwidth, Input Signal PAR = 9 0.01% Probability on CCDF η D EVM OUTPUT POWER (dBm) out 0 −5 −10 −15 −20 −25 3600 MRFG35020AR1 7 ...

Page 8

... MHz Z load Figure 10. Series Equivalent Source and Load Impedance MRFG35020AR1 Ω source f = 3500 MHz Vdc 300 mA Avg out source load MHz W W 3500 9.4 - j11.2 1 Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. ...

Page 9

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRFG35020AR1 9 ...

Page 10

... MRFG35020AR1 10 RF Device Data Freescale Semiconductor ...

Page 11

... Removed ”Operating Case Temperature Range” from Maximum Ratings table so that the maximum channel temperature rating is the limiting thermal design criteria and not the case temperature range Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MRFG35020AR1 11 ...

Page 12

... Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 303 - 675 - 2140 Fax 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRFG35020AR1 Document Number: MRFG35020A Rev. 1, 12/2008 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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