MOSFET RF N-CHAN 28V 23W NI-780S

 

MRF6S21100HSR3

Manufacturer Part NumberMRF6S21100HSR3
DescriptionMOSFET RF N-CHAN 28V 23W NI-780S
ManufacturerFreescale Semiconductor
MRF6S21100HSR3 datasheets

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Specifications of MRF6S21100HSR3

Transistor TypeN-ChannelFrequency2.11GHz
Gain15.9dBVoltage - Rated68V
Current Rating10µACurrent - Test950mA
Voltage - Test28VPower - Output23W
Package / CaseNI-780SChannel TypeN
Channel ModeEnhancementDrain Source Voltage (max)68V
Output Power (max)23WPower Gain (typ)@vds15.9dB
Frequency (min)2.11GHzFrequency (max)2.17GHz
Package TypeNI-780SPin Count3
Reverse Capacitance (typ)1.5@28VpFOperating Temp Range-65C to 200C
Drain Efficiency (typ)27.6%MountingSurface Mount
Mode Of Operation2-Carrier W-CDMA/CDMA/TDMANumber Of Elements1
Vswr (max)10Screening LevelMilitary
Lead Free Status / RoHS StatusLead free / RoHS CompliantNoise Figure-
show all specifications
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W - CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be us ed in Clas s AB for PCN - PCS/c ellular radio, WLL and
TD - SCDMA applications.
• Typical 2 - carrier W - CDMA Performance for V
P
= 23 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz,
out
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 15.9 dB
Drain Efficiency — 27.6%
IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 39.5 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 77°C, 23 W CW
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
= 28 Volts, I
= 950 mA,
DD
DQ
Operation
DD
Document Number: MRF6S21100H
Rev. 7, 1/2007
MRF6S21100HR3
MRF6S21100HSR3
2110 - 2170 MHz, 23 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S21100HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S21100HSR3
Symbol
Value
Unit
V
- 0.5, +68
Vdc
DSS
V
- 0.5, +12
Vdc
GS
T
- 65 to +150
°C
stg
T
150
°C
c
T
200
°C
J
(1,2)
Symbol
Value
Unit
R
°C/W
θJC
0.45
0.52
MRF6S21100HR3 MRF6S21100HSR3
1

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MRF6S21100HSR3 Summary of contents

  • Page 1

    ... MHz AVG CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 780 MRF6S21100HR3 CASE 465A - 06, STYLE 780S MRF6S21100HSR3 Symbol Value Unit V - 0.5, +68 Vdc DSS V - 0.5, +12 Vdc +150 °C stg T 150 ° 200 °C J (1,2) Symbol Value Unit R °C/W θJC 0.45 0.52 MRF6S21100HR3 MRF6S21100HSR3 1 ...

  • Page 2

    ... MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. PAR = 8 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. MRF6S21100HR3 MRF6S21100HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS I ...

  • Page 3

    ... T491C105M050AT EEV - HB1H100P ATC100B102JT500XT CDR33BX104AKWY ATC100B5R1JT500XT ATC100B150JT500XT ATC100B6R8JT500XT T491X226K035AT 515D107M050BB6AE3 CRCW08051000FKTA CRCW080510R0FKTA + + + + + C9 C10 C11 C13 C12 C14 Z10 Z11 Z12 RF OUTPUT C7 = 2.55 r Part Number Manufacturer Fair - Rite Kemet Panasonic ATC Kemet ATC ATC ATC Kemet Vishay/Sprague Vishay Vishay MRF6S21100HR3 MRF6S21100HSR3 V SUPPLY 3 ...

  • Page 4

    ... Figure 2. MRF6S21100HR3(SR3) Test Circuit Component Layout MRF6S21100HR3 MRF6S21100HSR3 C11 C12 C14 C9 C10 V DD C13 C7 2.1 GHz NI780 Rev 4 RF Device Data Freescale Semiconductor ...

  • Page 5

    ... Watts Avg. out 44 η −24 −10 −26 −20 −28 −30 −30 −40 2200 = 55 Watts Avg. out = 28 Vdc 2135 MHz 2145 MHz DD 1200 mA = 450 mA DQ 1450 mA 950 mA 700 OUTPUT POWER (WATTS) PEP out versus Output Power MRF6S21100HR3 MRF6S21100HSR3 100 5 ...

  • Page 6

    ... η OUTPUT POWER (WATTS) CW out Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S21100HR3 MRF6S21100HSR3 6 TYPICAL CHARACTERISTICS 100 28 Figure 8. Pulsed CW Output Power versus Vdc 950 2135 MHz 2145 MHz 2−Carrier W−CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth PAR = 8 0.01% Probability (CCDF) ...

  • Page 7

    ... D 3.84 MHz Channel BW −ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW −IM3 in +IM3 in 3.84 MHz BW 3.84 MHz BW −20 −15 −10 − FREQUENCY (MHz) Figure 14. 2-Carrier W-CDMA Spectrum MRF6S21100HR3 MRF6S21100HSR3 ...

  • Page 8

    ... MHz Z Z Figure 15. Series Equivalent Source and Load Impedance MRF6S21100HR3 MRF6S21100HSR3 Ω load f = 2080 MHz f = 2200 MHz Z source f = 2080 MHz Vdc 950 mA Avg out source load MHz Ω Ω 2080 2.44 - j6.3 1.83 - j3.0 2110 2.25 - j6.1 1.74 - j2.8 2140 2 ...

  • Page 9

    ... Description 2743019447 T491C105M050AT EEV - HB1H100P ATC100B102JT500XT CDR33BX104AKWY ATC100B5R1JT500XT ATC100B150JT500XT ATC100B6R8JT500XT T491X226K035AT 515D107M050BB6AE3 CRCW08051000FKTA CRCW080510R0FKTA + + + + + C9 C10 C11 C13 C12 C14 Z9 Z10 RF OUTPUT C7 = 2.55 r Part Number Manufacturer Fair - Rite Kemet Panasonic ATC Kemet ATC ATC ATC Kemet Vishay/Sprague Vishay Vishay MRF6S21100HR3 MRF6S21100HSR3 V SUPPLY 9 ...

  • Page 10

    ... Figure 17. MRF6S21100HR3(SR3) Test Circuit Component Layout — SCDMA MRF6S21100HR3 MRF6S21100HSR3 C11 C14 C9 C10 V DD C13 C12 C7 2.1 GHz NI780 Rev 4 RF Device Data Freescale Semiconductor ...

  • Page 11

    ... Adj −U 9 Alt− 7.5 1.28 MHz Channel BW VBW = 300 kHz Sweep Time = 200 ms RBW = 30 kHz +ALT2 in 1.28 MHz BW +3.2 MHz Offset −ALT1 in +ALT1 in 1.28 MHz BW 1.28 MHz BW −1.6 MHz Offset +1.6 MHz Offset 2.5 MHz Span 25 MHz f, FREQUENCY (MHz) MRF6S21100HR3 MRF6S21100HSR3 11 ...

  • Page 12

    ... Figure 22. Series Equivalent Source and Load Impedance — SCDMA MRF6S21100HR3 MRF6S21100HSR3 Ω 2070 MHz Z load f = 1950 MHz Z source f = 1950 MHz f = 2070 MHz Vdc 800 source load MHz W W 1950 1.04 - j4.28 1.38 - j3.90 1960 1.07 - j4.31 1.41 - j3.92 1970 0.96 - j4.13 1 ...

  • Page 13

    ... REF 0.127 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE F 5. SOURCE MRF6S21100HR3 MRF6S21100HSR3 MAX 34.16 9.91 4.32 12.83 1.14 0.15 1.70 5.33 19.96 20.00 3.51 9.53 9.52 9.91 4.32 1.14 ...

  • Page 14

    ... MTTF calculator for device • Added TD - SCDMA test circuit schematic, component designations and values, component layout, typical characteristic curves, test signal and series impedance • Added Product Documentation and Revision History MRF6S21100HR3 MRF6S21100HSR3 14 PRODUCT DOCUMENTATION REVISION HISTORY ...

  • Page 15

    ... Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007. All rights reserved. MRF6S21100HR3 MRF6S21100HSR3 15 ...

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