MRF7S18125AHR5 Freescale Semiconductor, MRF7S18125AHR5 Datasheet
MRF7S18125AHR5
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MRF7S18125AHR5 Summary of contents
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... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor = 1100 mA, P ...
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... Vdc — 2.7 — Vdc 4 5.3 7 Vdc 0.1 0.2 0.3 Vdc — 1.15 — pF — 675 — pF — 312 — 125 W CW 1880 MHz out 15 — % — (continued) RF Device Data Freescale Semiconductor ...
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... Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) V Avg., 1805 - 1880 MHz EDGE Modulation Power Gain Drain Efficiency Error Vector Magnitude Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset RF Device Data Freescale Semiconductor = 25°C unless otherwise noted) (continued) C Symbol = 28 Vdc P1dB ...
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... Microstrip 0.227″ x 0.083″ Microstrip 1.175″ x 0.080″ Microstrip 0.760″ x 0.080″ Microstrip Taconic TLX - 8 RF35, 0.031″, ε = 2.55 r Part Number Manufacturer TDK TDK Vishay ATC ATC ATC Vishay Vishay RF Device Data Freescale Semiconductor ...
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... C12 C7 Figure 2. MRF7S18125AHR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C13 C14 C15 C4 C11 MRF7S18125AH Rev. 0 MRF7S18125AHR3 MRF7S18125AHSR3 C10 C5 5 ...
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... Vdc 125 W (PEP) out = 1100 mA, Two−Tone Measurements IM3−L IM3−U IM7−L IM7− TWO−TONE SPACING (MHz) versus Two - Tone Spacing RF Device Data Freescale Semiconductor 100 ...
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... T = −30_C C −60 −65 −70 − 100 120 P , OUTPUT POWER (WATTS) out Figure 11. Spectral Regrowth at 400 kHz versus Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 18 T 17.5 Ideal 17 16 15.5 15 14.5 Actual 14 13.5 η 12 Figure 8. Power Gain and Drain Efficiency − ...
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... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 15. MTTF versus Junction Temperature T = −30_C C 25_C 85_C Vdc 125 W CW out I = 1100 mA DQ 1820 1830 1840 1850 1860 1870 f, FREQUENCY (MHz) 210 230 250 = 55 Device Data Freescale Semiconductor 1880 ...
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... Center 1.96 GHz RF Device Data Freescale Semiconductor GSM TEST SIGNAL Reference Power VWB = 30 kHz Sweep Time = 70 ms RBW = 30 kHz 400 kHz 600 kHz 200 kHz Figure 16. EDGE Spectrum 400 kHz 600 kHz ...
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... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Input Device Matching Under Network Test Z Z source load Output Matching Network RF Device Data Freescale Semiconductor ...
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... ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ Device Data Freescale Semiconductor P6dB = 53.68 dBm (233.3 W) P3dB = 53.07 dBm (202.7 W) P1dB = 52.105 dBm (162 Vdc 1100 mA, Pulsed μsec(on), 10% Duty Cycle, f =1840 MHz ...
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... U −−− 0.040 −−− 1. −−− 0.030 −−− 0.76 aaa 0.005 REF 0.127 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: F PIN 1. DRAIN 2. GATE 5. SOURCE RF Device Data Freescale Semiconductor ...
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... AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 Nov. 2008 • Initial Release of Data Sheet RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MRF7S18125AHR3 MRF7S18125AHSR3 13 ...
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... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...