MRFE6S9200HR3 Freescale Semiconductor, MRFE6S9200HR3 Datasheet

MRFE6S9200HR3
Manufacturer Part Number	MRFE6S9200HR3
Description	MOSFET RF N-CH 58W 28V NI-880
Manufacturer	Freescale Semiconductor
MRFE6S9200HR3 datasheets	1. MRFE6S9200HR3.pdf (11 pages)

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Specifications of MRFE6S9200HR3
Transistor Type	N-Channel	Frequency	880MHz
Gain	21dB	Voltage - Rated	66V
Current Rating	10µA	Current - Test	1.4A
Voltage - Test	28V	Power - Output	58W
Package / Case	NI-880	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Noise Figure	-

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Technical Data

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with

frequencies up to 1000 MHz. The high gain and broadband performance of

these devices make them ideal for large - signal, common - source amplifier

applications in 28 volt base station equipment.

• Typical Single - Carrier W - CDMA Performance: V

1400 mA, P

= 58 Watts Avg., f = 880 MHz, 3GPP Test Model 1,

out

64 DPCH with 45.2% Clipping, Channel Bandwidth = 3.84 MHz, Input

Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.

Power Gain — 21 dB

Drain Efficiency — 35%

Device Output Signal PAR — 6.36 dB @ 0.01% Probability on CCDF

ACPR @ 5 MHz Offset — - 40 dBc in 3.84 MHz Channel Bandwidth

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, P

(3 dB Input Overdrive from Rated P

Ruggedness.

Features

• 100% PAR Tested for Guaranteed Output Power Capability

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V

• Integrated ESD Protection

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Drain - Source Voltage

Gate - Source Voltage

Storage Temperature Range

Case Operating Temperature

(1,2)

Operating Junction Temperature

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Case Temperature 80°C, 200 W CW

Case Temperature 79°C, 58 W CW

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

RF Device Data

Freescale Semiconductor

= 28 Volts, I

= 300 W CW

out

), Designed for Enhanced

out

Operation

Document Number: MRFE6S9200H

Rev. 1, 12/2008

MRFE6S9200HR3

MRFE6S9200HSR3

880 MHz, 58 W AVG., 28 V

SINGLE W - CDMA

LATERAL N - CHANNEL

RF POWER MOSFETs

CASE 465B - 03, STYLE 1

NI - 880

MRFE6S9200HR3

CASE 465C - 02, STYLE 1

NI - 880S

MRFE6S9200HSR3

Symbol

Value

Unit

- 0.5, +66

Vdc

DSS

- 0.5, +12

Vdc

- 65 to +150

°C

stg

150

°C

225

°C

(2,3)

Symbol

Value

Unit

°C/W

θJC

0.29

0.33

MRFE6S9200HR3 MRFE6S9200HSR3

Download datasheet (394Kb)

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MRFE6S9200HR3 Summary of contents
Page 1 ... SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 880 MRFE6S9200HR3 CASE 465C - 02, STYLE 880S MRFE6S9200HSR3 Symbol Value Unit V - 0.5, +66 Vdc DSS V - 0.5, +12 Vdc +150 °C stg T 150 ° 225 °C J (2,3) Symbol Value Unit R °C/W θJC 0.29 0.33 MRFE6S9200HR3 MRFE6S9200HSR3 1 ... Page 2 ... W CW 880 MHz out Part - to - Part Insertion Phase Variation @ 880 MHz, Six Sigma Window Gain Variation over Temperature ( - 30°C to +85°C) Output Power Variation over Temperature ( - 30°C to +85°C) 1. Part is internally matched on input. MRFE6S9200HR3 MRFE6S9200HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS ... Page 3 ... Microstrip Z7 0.140″ x 0.491″ Microstrip Z8 0.244″ x 0.736″ x 0.980″ Taper Figure 1. MRFE6S9200HR3(SR3) Test Circuit Schematic Table 5. MRFE6S9200HR3(SR3) Test Circuit Component Designations and Values Part B1, B2 Small Ferrite Beads, Surface Mount C1, C2, C3, C4, C5 Chip Capacitors C7 2 ... Page 4 ... C2 C26 B1 R3 C30 C1 C7 C20 C31 B2 C27 C3 Figure 2. MRFE6S9200HR3(SR3) Test Circuit Component Layout MRFE6S9200HR3 MRFE6S9200HSR3 4 900 MHz NI−880 Rev. 3 C11 R2 C14 C16 C9 C12 C13 C8 C15 C17 R1 C10 C4 C22 C28 C23 C32 C34 C6 C18 C21 C19 C33 C29 C24 C25 C5 RF Device Data ... Page 5 ... Vdc I = 700 mA DQ 1400 mA 2100 mA 1750 mA 10 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power MRFE6S9200HR3 MRFE6S9200HSR3 600 5 ... Page 6 ... No Memory Correction DPD Corrected, with Memory Correction −60 − OUTPUT POWER (dBm) out Figure 10. Digital Predistortion Correction versus ACPR and Output Power MRFE6S9200HR3 MRFE6S9200HSR3 6 TYPICAL CHARACTERISTICS −10 −20 −30 −40 IM7−U −50 IM7−L −60 −70 1 100 600 Figure 8. Intermodulation Distortion Products − 59.7 W − ... Page 7 ... Figure 15. Single - Carrier W - CDMA Spectrum 130 150 170 190 210 230 T , JUNCTION TEMPERATURE (° Avg., and η Vdc 35%. DD out D 3.84 MHz Channel BW −ACPR in 3.84 MHz −ACPR in 3.84 MHz Integrated BW Integrated BW −5.4 −3.6 −1.8 0 1.8 3.6 5.4 f, FREQUENCY (MHz) MRFE6S9200HR3 MRFE6S9200HSR3 250 7 ... Page 8 ... MHz f = 800 MHz Figure 16. Series Equivalent Source and Load Impedance MRFE6S9200HR3 MRFE6S9200HSR3 8 Z load Z source f = 960 MHz Vdc 1400 mA Avg out source MHz W 800 4.23 - j4.85 0.70 - j0.33 820 4.46 - j4.69 0.76 - j0.13 840 4.39 - j4.75 0.78 - j0.02 860 4.06 - j4.68 ... Page 9 ... M 0.872 0.888 22.15 22.55 N 0.871 0.889 19.30 22.60 R 0.515 0.525 13.10 13.30 S 0.515 0.525 13.10 13.30 aaa 0.007 REF 0.178 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE F MRFE6S9200HR3 MRFE6S9200HSR3 9 ... Page 10 ... Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic • Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part numbers • Deleted output signal data from Fig. 14, CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal MRFE6S9200HR3 MRFE6S9200HSR3 10 PRODUCT DOCUMENTATION REVISION HISTORY Description ... Page 11 ... Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007-2008. All rights reserved. MRFE6S9200HR3 MRFE6S9200HSR3 11 ...

MRFE6S9200HR3 Summary of contents

Page 1
... SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 880 MRFE6S9200HR3 CASE 465C - 02, STYLE 880S MRFE6S9200HSR3 Symbol Value Unit V - 0.5, +66 Vdc DSS V - 0.5, +12 Vdc +150 °C stg T 150 ° 225 °C J (2,3) Symbol Value Unit R °C/W θJC 0.29 0.33 MRFE6S9200HR3 MRFE6S9200HSR3 1 ...
Page 2
... W CW 880 MHz out Part - to - Part Insertion Phase Variation @ 880 MHz, Six Sigma Window Gain Variation over Temperature ( - 30°C to +85°C) Output Power Variation over Temperature ( - 30°C to +85°C) 1. Part is internally matched on input. MRFE6S9200HR3 MRFE6S9200HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS ...
Page 3
... Microstrip Z7 0.140″ x 0.491″ Microstrip Z8 0.244″ x 0.736″ x 0.980″ Taper Figure 1. MRFE6S9200HR3(SR3) Test Circuit Schematic Table 5. MRFE6S9200HR3(SR3) Test Circuit Component Designations and Values Part B1, B2 Small Ferrite Beads, Surface Mount C1, C2, C3, C4, C5 Chip Capacitors C7 2 ...
Page 4
... C2 C26 B1 R3 C30 C1 C7 C20 C31 B2 C27 C3 Figure 2. MRFE6S9200HR3(SR3) Test Circuit Component Layout MRFE6S9200HR3 MRFE6S9200HSR3 4 900 MHz NI−880 Rev. 3 C11 R2 C14 C16 C9 C12 C13 C8 C15 C17 R1 C10 C4 C22 C28 C23 C32 C34 C6 C18 C21 C19 C33 C29 C24 C25 C5 RF Device Data ...
Page 5
... Vdc I = 700 mA DQ 1400 mA 2100 mA 1750 mA 10 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power MRFE6S9200HR3 MRFE6S9200HSR3 600 5 ...
Page 6
... No Memory Correction DPD Corrected, with Memory Correction −60 − OUTPUT POWER (dBm) out Figure 10. Digital Predistortion Correction versus ACPR and Output Power MRFE6S9200HR3 MRFE6S9200HSR3 6 TYPICAL CHARACTERISTICS −10 −20 −30 −40 IM7−U −50 IM7−L −60 −70 1 100 600 Figure 8. Intermodulation Distortion Products − 59.7 W − ...
Page 7
... Figure 15. Single - Carrier W - CDMA Spectrum 130 150 170 190 210 230 T , JUNCTION TEMPERATURE (° Avg., and η Vdc 35%. DD out D 3.84 MHz Channel BW −ACPR in 3.84 MHz −ACPR in 3.84 MHz Integrated BW Integrated BW −5.4 −3.6 −1.8 0 1.8 3.6 5.4 f, FREQUENCY (MHz) MRFE6S9200HR3 MRFE6S9200HSR3 250 7 ...
Page 8
... MHz f = 800 MHz Figure 16. Series Equivalent Source and Load Impedance MRFE6S9200HR3 MRFE6S9200HSR3 8 Z load Z source f = 960 MHz Vdc 1400 mA Avg out source MHz W 800 4.23 - j4.85 0.70 - j0.33 820 4.46 - j4.69 0.76 - j0.13 840 4.39 - j4.75 0.78 - j0.02 860 4.06 - j4.68 ...
Page 9
... M 0.872 0.888 22.15 22.55 N 0.871 0.889 19.30 22.60 R 0.515 0.525 13.10 13.30 S 0.515 0.525 13.10 13.30 aaa 0.007 REF 0.178 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE F MRFE6S9200HR3 MRFE6S9200HSR3 9 ...
Page 10
... Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic • Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part numbers • Deleted output signal data from Fig. 14, CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal MRFE6S9200HR3 MRFE6S9200HSR3 10 PRODUCT DOCUMENTATION REVISION HISTORY Description ...
Page 11
... Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007-2008. All rights reserved. MRFE6S9200HR3 MRFE6S9200HSR3 11 ...

MRFE6S9200HR3

MRFE6S9200HR3

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