MRFE6S9201HSR3

Manufacturer Part NumberMRFE6S9201HSR3
DescriptionMOSFET RF N-CH 40W 28V NI-780S
ManufacturerFreescale Semiconductor
MRFE6S9201HSR3 datasheets

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Specifications of MRFE6S9201HSR3

Transistor TypeN-ChannelFrequency880MHz
Gain20.8dBVoltage - Rated66V
Current Rating10µACurrent - Test1.4A
Voltage - Test28VPower - Output40W
Package / CaseNI-780SLead Free Status / RoHS StatusLead free / RoHS Compliant
Noise Figure-  
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
• Typical Single - Carrier N - CDMA Performance: V
1400 mA, P
= 40 Watts Avg., f = 880 MHz, IS - 95 CDMA (Pilot, Sync,
out
Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz,
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 20.8 dB
Drain Efficiency — 31.3%
Device Output Signal PAR — 8.1 dB @ 0.01% Probability on CCDF
ACPR @ 750 kHz Offset — - 46.5 dBc in 30 kHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, P
(2 dB Input Overdrive from Rated P
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
(1,2)
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 85°C, 197 W CW
Case Temperature 75°C, 40 W CW
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007-2008. All rights reserved.
RF Device Data
Freescale Semiconductor
= 28 Volts, I
=
DD
DQ
= 270 W CW
out
), Designed for Enhanced Ruggedness
out
Operation
DD
Document Number: MRFE6S9201H
Rev. 1, 12/2008
MRFE6S9201HR3
MRFE6S9201HSR3
880 MHz, 40 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRFE6S9201HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRFE6S9201HSR3
Symbol
Value
Unit
V
- 0.5, +66
Vdc
DSS
V
- 6.0, +10
Vdc
GS
T
- 65 to +150
°C
stg
T
150
°C
C
T
225
°C
J
(2,3)
Symbol
Value
Unit
R
°C/W
θJC
0.34
0.33
MRFE6S9201HR3 MRFE6S9201HSR3
1

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MRFE6S9201HSR3 Summary of contents

  • Page 1

    ... SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 780 MRFE6S9201HR3 CASE 465A - 06, STYLE 780S MRFE6S9201HSR3 Symbol Value Unit V - 0.5, +66 Vdc DSS V - 6.0, +10 Vdc +150 °C stg T 150 ° 225 °C J (2,3) Symbol Value Unit R °C/W θJC 0.34 0.33 MRFE6S9201HR3 MRFE6S9201HSR3 1 ...

  • Page 2

    ... Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9 0.01% Probability on CCDF. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched on input. MRFE6S9201HR3 MRFE6S9201HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS I ...

  • Page 3

    ... Min Typ Max = 1400 mA, 865 - 900 MHz Bandwidth — 10 — — 0.19 — — 0.461 — — 11.66 — — 14.97 — — 0.011 — — 0.39 — MRFE6S9201HR3 MRFE6S9201HSR3 Unit MHz dB ° ns ° dB/°C dBm/°C 3 ...

  • Page 4

    ... Microstrip Z15 Z6 0.141″ x 0.546″ x 0.300″ Taper Z16 Z7 0.076″ x 0.734″ x 0.546″ Taper Z17 Z8 0.023″ x 0.780″ x 0.734″ Taper Z18 Z9 0.170″ x 0.780″ Microstrip Figure 1. MRFE6S9201HR3(HSR3) Test Circuit Schematic MRFE6S9201HR3 MRFE6S9201HSR3 ...

  • Page 5

    ... Fair - Rite ATC Kemet Johanson ATC ATC ATC ATC United Chemi - Con ATC ATC Murata Kemet Kemet ATC Vishay Vishay C27 C28 C30 C31 C26 C42 C29 C20 C39 C25 C32 C38 C46 C44 C33 C37 C34 C35 C36 C45 MRFE6S9201HR3 MRFE6S9201HSR3 5 ...

  • Page 6

    ... Vdc 880 MHz 880.1 MHz DD Two−Tone Measurements OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power MRFE6S9201HR3 MRFE6S9201HSR3 6 TYPICAL CHARACTERISTICS G ps η Vdc (Avg.) DD out I = 1400 mA, N−CDMA IS−95 Pilot DQ Sync, Paging, Traffic Codes 8 Through 13 ...

  • Page 7

    ... Gain and Drain Efficiency versus Output Power = 28 Vdc 200 W (PEP 1400 mA out DQ IM5−U IM5−L 10 TWO−TONE SPACING (MHz) versus Tone Spacing Ideal Actual −20 25_C −30 −30_C −40 −50 25_C 85_C −60 −70 85_C −80 25_C −90 100 300 MRFE6S9201HR3 MRFE6S9201HSR3 100 7 ...

  • Page 8

    ... V DD η 880 MHz OUTPUT POWER (WATTS) CW out Figure 11. Power Gain and Drain Efficiency versus CW Output Power MRFE6S9201HR3 MRFE6S9201HSR3 8 TYPICAL CHARACTERISTICS 22 70 −30_C 60 25_C 21 50 85_C Vdc 10 = 1400 100 400 Figure 12. Power Gain versus Output Power 90 110 130 150 170 ...

  • Page 9

    ... FREQUENCY (MHz) MRFE6S9201HR3 MRFE6S9201HSR3 . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

  • Page 10

    ... MHz f = 980 MHz Figure 16. Series Equivalent Source and Load Impedance MRFE6S9201HR3 MRFE6S9201HSR3 10 Z load Z source f = 980 MHz Vdc 1400 mA Avg out source MHz W 820 3.28 - j3.94 0.78 + j0.24 840 3.12 - j3.93 0.81 + j0.36 860 2.85 - j3.73 0.83 + j0.51 880 2.58 - j3.39 ...

  • Page 11

    ... REF 0.127 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRFE6S9201HR3 MRFE6S9201HSR3 MAX 34.16 9.91 4.32 12.83 1.14 0.15 1.70 5.33 19.96 20.00 3.51 9.53 9.52 11 ...

  • Page 12

    ... Initial Release of Data Sheet 1 Dec. 2008 • Updated Typical Performance Full Frequency Band 880 MHz to match production test • Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part numbers MRFE6S9201HR3 MRFE6S9201HSR3 12 PRODUCT DOCUMENTATION REVISION HISTORY Description RF Device Data ...

  • Page 13

    ... Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007-2008. All rights reserved. MRFE6S9201HR3 MRFE6S9201HSR3 13 ...

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