MRF7S18170HR3 Freescale Semiconductor, MRF7S18170HR3 Datasheet - Page 14

• Manufacturer Part Number: MRF7S18170HR3
• Description: TRANSISTOR RF LDMOS NI-880
• Manufacturer: Freescale Semiconductor

Specifications of MRF7S18170HR3

• Transistor Type: LDMOS
• Frequency: 1.81GHz
• Gain: 17.5dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 1.4A
• Voltage - Test: 28V
• Power - Output: 50W
• Package / Case: NI-880
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
MRF7S18170HR3 MRF7S18170HSR3
14
Revision
Refer to the following documents to aid your design process.
The following table summarizes revisions to this document.
0
1
Dec. 2008
Oct. 2006
Date
• Initial Release of Data Sheet
• Corrected V
• Updated Typical Performance table to provide better definition of characterization attributes, p. 3
• Corrected Z7 from 1.110″ to 0.120″ in Z list, Fig. 1, Test Circuit Schematic – NI - 880, p. 4
• Updated Part Numbers in Tables 5, 6, Component Designations and Values, to latest RoHS compliant
• Corrected Z7 from 1.110″ to 0.117″ in Z list, Fig. 3, Test Circuit Schematic – NI - 880S, p. 6
• Adjusted scale for Fig. 10, Intermodulation Distortion Products versus Tone Spacing, to show wider
• Replaced Fig. 15, MTTF versus Junction Temperature, with updated graph; removed Amps
• Updated Fig. 16, CCDF W - CDMA 3GPP, Test Model 1, 64 PDCH, 50% Clipping, Single - Carrier Test
part numbers, p. 4, 6
dynamic range, p. 9
operating characteristics and location of MTTF calculator for device, p. 10
Signal, to show input signal only, p. 10
DS
to V
PRODUCT DOCUMENTATION
DD
in the RF test condition voltage callout for V
REVISION HISTORY
Description
GS(Q)
, On Characteristics table, p. 2
Freescale Semiconductor
RF Device Data
2
and listed