MRF7S18170HR3 Freescale Semiconductor, MRF7S18170HR3 Datasheet - Page 8

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MRF7S18170HR3

Manufacturer Part Number
MRF7S18170HR3
Description
TRANSISTOR RF LDMOS NI-880
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF7S18170HR3

Transistor Type
LDMOS
Frequency
1.81GHz
Gain
17.5dB
Voltage - Rated
65V
Current Rating
10µA
Current - Test
1.4A
Voltage - Test
28V
Power - Output
50W
Package / Case
NI-880
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
MRF7S18170HR3 MRF7S18170HSR3
8
19
18
17
16
15
14
1
1050 mA
700 mA
1750 mA
1400 mA
Figure 7. Two - Tone Power Gain versus
I
DQ
= 2100 mA
V
Two−Tone Measurements, 10 MHz Tone Spacing
P
DD
out
, OUTPUT POWER (WATTS) PEP
= 28 Vdc, f1 = 1835 MHz, f2 = 1845 MHz
Output Power
10
Figure 5. Output Peak - to - Average Ratio Compression (PARC)
Figure 6. Output Peak - to - Average Ratio Compression (PARC)
18
17
16
15
14
13
12
10
18
17
16
15
14
13
12
10
11
11
1760
1760
Broadband Performance @ P
Broadband Performance @ P
G
PARC
η
η
IRL
PARC
ps
D
D
1780
1780
100
IRL
G
TYPICAL CHARACTERISTICS
V
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF)
ps
DD
1800
1800
V
I
3.84 MHz Channel Bandwidth
PAR = 7.5 dB @ 0.01% Probability (CCDF)
= 28 Vdc, P
DQ
DD
= 1400 mA, Single−Carrier W−CDMA
= 28 Vdc, P
1820
1820
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
400
out
1840
1840
= 50 W (Avg.), I
out
= 80 W (Avg.)
1860
1860
out
out
−10
−20
−30
−40
−50
−60
1880
1880
DQ
= 50 Watts Avg.
= 80 Watts Avg.
1
Figure 8. Third Order Intermodulation Distortion
= 1400 mA
1400 mA
I
1900
1900
DQ
= 700 mA
1050 mA
1750 mA
1920
1920
P
out
1940
1940
versus Output Power
, OUTPUT POWER (WATTS) PEP
V
Two−Tone Measurements, 10 MHz Tone Spacing
DD
36
34
32
30
28
−1
−1.7
−2.4
−3.1
46
44
42
40
38
−2.7
−3.4
−4.1
−4.8
2100 mA
= 28 Vdc, f1 = 1835 MHz, f2 = 1845 MHz
10
Freescale Semiconductor
−5
−8
−11
−14
−17
−5
−8
−11
−14
−17
RF Device Data
100
400

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