MRFE6P9220HR3 Freescale Semiconductor, MRFE6P9220HR3 Datasheet

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MRFE6P9220HR3

Manufacturer Part Number
MRFE6P9220HR3
Description
MOSFET RF N-CH 200W NI-860C3
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRFE6P9220HR3

Transistor Type
N-Channel
Frequency
880MHz
Gain
20dB
Voltage - Rated
66V
Current Rating
10µA
Current - Test
1.6A
Voltage - Test
28V
Power - Output
47W
Package / Case
NI-860C3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-

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© Freescale Semiconductor, Inc., 2009. All rights reserved.
Freescale Semiconductor
RF Product Device Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
frequencies up to 1000 MHz. The high gain and broadband performance of
this device makes it ideal for large - signal, common - source amplifier
applications in 28 Volt base station equipment.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz: V
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 350 Watts CW Output
• Typical P
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Device Designed for Push - Pull Operation Only
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Freescale Semiconductor
Technical Data
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for broadband commercial and industrial applications with
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
I
Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power (2 dB Input Overdrive from Rated P
Ruggedness
DQ
Case Temperature 80°C, 220 W CW
Case Temperature 76°C, 47 W CW
Power Gain — 20 dB
Drain Efficiency — 30%
ACPR @ 750 kHz Offset — - 46 dBc in 30 kHz Bandwidth
calculators by product.
Select Documentation/Application Notes - AN1955.
= 1600 mA, P
out
@ 1 dB Compression Point ] 220 Watts CW
out
= 47 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
(1,2)
Characteristic
Rating
DD
Operation
out
), Designed for Enhanced
DD
= 28 Volts,
Symbol
Symbol
V
R
V
T
T
DSS
T
θJC
GS
stg
Document Number: MRFE6P9220H
C
J
865 - 900 MHz, 47 W AVG., 28 V
MRFE6P9220HR3
LATERAL N - CHANNEL
CASE 375G - 04, STYLE 1
RF POWER MOSFET
SINGLE N - CDMA
- 65 to +150
Value
- 0.5, +66
- 0.5, +12
Value
NI - 860C3
0.25
0.28
150
225
(2,3)
MRFE6P9220HR3
Rev. 0, 1/2009
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
1

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MRFE6P9220HR3 Summary of contents

Page 1

... Rev. 0, 1/2009 MRFE6P9220HR3 865 - 900 MHz AVG SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFET CASE 375G - 04, STYLE 860C3 Symbol Value Unit V - 0.5, +66 Vdc DSS V - 0.5, +12 Vdc +150 °C stg T 150 ° 225 °C J (2,3) Symbol Value Unit R °C/W θJC 0.25 0.28 MRFE6P9220HR3 1 ...

Page 2

... Adjacent Channel Power Ratio Input Return Loss 1. Each side of the device measured separately. 2. Part internally matched both on input and output. 3. Measurement made with device in push - pull configuration. 4. Drains are tied together internally as this is a total device value. MRFE6P9220HR3 2 = 25°C unless otherwise noted) C Symbol (4) ...

Page 3

... Min Typ Max = 1600 mA, 850 - 910 MHz Bandwidth — 220 — — 10 — — 35 — — 1.1 — — 3.1 — — 4.6 — — 11 — — 0.012 — — 0.005 — MRFE6P9220HR3 Unit W MHz MHz dB ° ns ° dB/°C dBm/°C 3 ...

Page 4

... Chip Capacitor C15, C19 47 μ Electrolytic Capacitors C18, C22 470 μ Electrolytic Capacitors C23, C24 22 pF Chip Capacitors Coax1 Ω, Semi Rigid Coax, 2.40″ Long R1 Ω, 1/4 W Chip Resistors R3 1.0 kΩ, 1/4 W Chip Resistor MRFE6P9220HR3 Z19 Z10 Z12 C11 C10 ...

Page 5

... COAX1 C4 C5 COAX2 Figure 2. MRF6P9220HR3 Test Circuit Component Layout Freescale Semiconductor RF Product Device Data C14 C11 C12 C6 C10 C13 C15 C18 V C23 DD C16 C17 COAX3 COAX4 C20 C21 V C24 DD C19 C22 MRFE6P9220HR3 5 ...

Page 6

... 880 MHz, N−CDMA IS−95 50 (Pilot, Sync, Paging, Traffic Codes 8 Through 13 25_C Figure 6. Single - Carrier N - CDMA ACPR, Power Gain and Drain Efficiency versus Output Power MRFE6P9220HR3 6 TYPICAL CHARACTERISTICS η Vdc (Avg.) DD out I = 1600 mA, N−CDMA IS−95 DQ (Pilot, Sync, Paging, Traffic Codes 8 Through 13) ...

Page 7

... This above graph displays calculated MTTF in hours when the device = 47 W Avg., and η is operated Vdc out MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product 25_C 85_C 500 = 1600 350 400 230 250 = 30%. D MRFE6P9220HR3 7 ...

Page 8

... Carriers. ACPR Measured in 30 kHz Bandwidth @ ±750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ ±1.98 MHz Offset. PAR = 9 0.001 0.01% Probability on CCDF. 0.0001 PEAK−TO−AVERAGE (dB) Figure 10. Single - Carrier CCDF N - CDMA MRFE6P9220HR3 CDMA TEST SIGNAL −10 −20 −30 −40 −50 −ALT1 in 30 kHz Integrated BW −60 − ...

Page 9

... Z = Test circuit impedance as measured from source gate to gate, balanced configuration Test circuit impedance as measured load from drain to drain, balanced configuration. Device Input + Under Matching Test Network − source Z load Ω Output − Matching Network + load MRFE6P9220HR3 9 ...

Page 10

... (LID (INSULATOR bbb bbb MRFE6P9220HR3 10 PACKAGE DIMENSIONS bbb (FLANGE ccc (LID (INSULATOR) T bbb CASE 375G - 04 ISSUE 860C3 NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DIMENSION MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1 ...

Page 11

... AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 Jan. 2009 • Initial Release of Data Sheet Freescale Semiconductor RF Product Device Data PRODUCT DOCUMENTATION REVISION HISTORY Description MRFE6P9220HR3 11 ...

Page 12

... Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 303 - 675 - 2140 Fax 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRFE6P9220HR3 Document Number: MRFE6P9220H Rev. 0, 1/2009 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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