MRF8S9260HSR3 Freescale Semiconductor, MRF8S9260HSR3 Datasheet

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MRF8S9260HSR3

Manufacturer Part Number
MRF8S9260HSR3
Description
FET RF N-CH 960MHZ 70V NI-880HS
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF8S9260HSR3

Transistor Type
N-Channel
Frequency
960MHz
Gain
18.6dB
Voltage - Rated
70V
Current - Test
1.7A
Voltage - Test
28V
Power - Output
75W
Package / Case
NI-880S
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Noise Figure
-
© Freescale Semiconductor, Inc., 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all
typical cellular base station modulation formats.
• Typical Single-Carrier W-CDMA Performance: V
• Capable of Handling 7:1 VSWR, @ 32 Vdc, 940 MHz, 380 Watts CW
• Typical P
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate- Source Voltage Range for Improved Class C Operation
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ T
Thermal Resistance, Junction to Case
Designed for CDMA and multicarrier GSM base station applications with
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
I
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Output Power (3 dB Input Overdrive from Rated P
Enhanced Ruggedness
and Common Source S-Parameters
DQ
Derate above 25°C
Case Temperature 80°C, 75 W CW, 28 Vdc, I
Case Temperature 80°C, 265 W CW, 28 Vdc, I
calculators by product.
Select Documentation/Application Notes - AN1955.
= 1700 mA, P
Frequency
920 MHz
940 MHz
960 MHz
out
@ 1 dB Compression Point ] 260 Watts CW
C
out
= 25°C
= 75 Watts Avg., IQ Magnitude Clipping, Channel
(dB)
18.8
18.7
18.6
G
ps
(1,2)
Characteristic
Rating
36.0
37.0
38.5
(%)
h
D
DQ
DQ
= 1800 mA
= 1100 mA
Output PAR
DD
(dB)
out
6.3
6.2
5.9
= 28 Volts,
), Designed for
ACPR
(dBc)
-39.5
-38.6
-37.1
Symbol
Symbol
V
R
V
V
CW
T
T
DSS
T
θJC
GS
DD
stg
C
CASE 465C-02, STYLE 1
J
CASE 465B-03, STYLE 1
Document Number: MRF8S9260H
MRF8S9260HSR3
920-960 MHz, 75 W AVG., 28 V
MRF8S9260HSR3
MRF8S9260HR3 MRF8S9260HSR3
MRF8S9260HR3
MRF8S9260HR3
LATERAL N-CHANNEL
RF POWER MOSFETs
NI-880S
NI-880
SINGLE W-CDMA
-65 to +150
Value
-0.5, +70
-6.0, +10
32, +0
Value
0.37
0.31
150
225
280
1.5
(2,3)
Rev. 0, 12/2009
W/°C
°C/W
Unit
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
1

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MRF8S9260HSR3 Summary of contents

Page 1

... CASE 465B-03, STYLE 1 NI-880 MRF8S9260HR3 CASE 465C-02, STYLE 1 NI-880S MRF8S9260HSR3 Symbol Value Unit V -0.5, +70 Vdc DSS V -6.0, +10 Vdc GS V 32, +0 Vdc DD °C T -65 to +150 stg °C T 150 C °C T 225 J CW 280 W 1.5 W/°C (2,3) Symbol Value Unit °C/W R θJC 0.37 0.31 MRF8S9260HR3 MRF8S9260HSR3 1 ...

Page 2

... Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency 920 MHz 940 MHz 960 MHz 1. Part internally matched both on input and output. MRF8S9260HR3 MRF8S9260HSR3 2 = 25°C unless otherwise noted) Symbol I DSS I ...

Page 3

... MHz Bandwidth DD DQ P1dB IMD sym VBW res = 75 W Avg. G out F ΔG ΔP1dB Min Typ Max Unit — 260 — W MHz — 10 — — 50 — MHz — 0.2 — dB — 0.024 — dB/°C — 0.0075 — dBm/°C MRF8S9260HR3 MRF8S9260HSR3 3 ...

Page 4

... C10, C11 5.6 pF Chip Capacitors 470 μ Electrolytic Capacitors C15, C21 C17 4.3 pF Chip Capacitor C18 0.8 pF Chip Capacitor 10 Ω, 1/4 W Chip Resistor R1 0 Ω, 3.5 A Chip Resistor R2 0.030″, ε PCB MRF8S9260HR3 MRF8S9260HSR3 MRF8S9260H Rev. 1 Description ATC100B360JT500XT ATC100B0R4BT500XT ATC100B4R7BT500XT ATC100B8R2BT500XT ...

Page 5

... Input Signal PAR = 7 0.01% Probability on CCDF 60 85 110 P , OUTPUT POWER (WATTS) out Figure 4. Output Peak-to-Average Ratio Compression (PARC) versus Output Power -33 - -0.5 -37 -13 -1 -39 -15 -1.5 -17 PARC -41 -2 -43 -19 -2.5 970 980 100 -20 60 η -25 ACPR - -35 30 -40 20 PARC -45 10 -50 0 135 160 MRF8S9260HR3 MRF8S9260HSR3 5 ...

Page 6

... Channel Bandwidth @ ±5 MHz Offset. 0.001 Input Signal PAR = 7 0.01% Probability on CCDF 0.0001 PEAK-T O-A VERAGE (dB) Figure 7. CCDF W-CDMA IQ Magnitude Clipping, Single-Carrier Test Signal MRF8S9260HR3 MRF8S9260HSR3 6 TYPICAL CHARACTERISTICS 960 MHz 940 MHz 940 MHz 920 MHz ps 920 MHz 960 MHz = 28 Vdc 1700 ...

Page 7

... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured from load drain to ground. Input Device Under Matching Network Test Z Z source load Output Matching Network MRF8S9260HR3 MRF8S9260HSR3 7 ...

Page 8

... ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V MRF8S9260HR3 MRF8S9260HSR3 8 = 1700 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle = 28 Vdc 920 MHz 920 MHz 940 MHz 940 MHz 960 MHz INPUT POWER (dBm) in P1dB ...

Page 9

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8S9260HR3 MRF8S9260HSR3 9 ...

Page 10

... MRF8S9260HR3 MRF8S9260HSR3 10 RF Device Data Freescale Semiconductor ...

Page 11

... RF Device Data Freescale Semiconductor MRF8S9260HR3 MRF8S9260HSR3 11 ...

Page 12

... MRF8S9260HR3 MRF8S9260HSR3 12 RF Device Data Freescale Semiconductor ...

Page 13

... For Software and Tools Part Number search at http://www.freescale.com, and select the “Part Number” link the Software & Tools tab on the part's Product Summary page to download the respective tool. The following table summarizes revisions to this document. Revision Date • Initial Release of Data Sheet 0 Dec. 2009 RF Device Data Freescale Semiconductor REVISION HISTORY Description MRF8S9260HR3 MRF8S9260HSR3 13 ...

Page 14

... For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1-800-441-2447 or +1-303-675-2140 Fax: +1-303-675-2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF8S9260HR3 MRF8S9260HSR3 Document Number: MRF8S9260H Rev. 0, 12/2009 14 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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