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MRF6S21190HR3
MRF6S21190HR3 | |
|---|---|
| Manufacturer Part Number | MRF6S21190HR3 |
| Description | MOSFET RF N-CH 54W NI880 |
| Manufacturer | Freescale Semiconductor |
| MRF6S21190HR3 datasheets |
|
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Specifications of MRF6S21190HR3 | |||
|---|---|---|---|
| Transistor Type | N-Channel | Frequency | 2.11GHz |
| Gain | 16dB | Voltage - Rated | 68V |
| Current Rating | 10µA | Current - Test | 1.6A |
| Voltage - Test | 28V | Power - Output | 54W |
| Package / Case | NI-880 | Channel Type | N |
| Channel Mode | Enhancement | Drain Source Voltage (max) | 68V |
| Output Power (max) | 54W | Power Gain (typ)@vds | 16dB |
| Frequency (min) | 2.11GHz | Frequency (max) | 2.17GHz |
| Package Type | NI-880 | Pin Count | 3 |
| Input Capacitance (typ)@vds | 526@28VpF | Output Capacitance (typ)@vds | 185@28VpF |
| Reverse Capacitance (typ) | 2.8@28VpF | Operating Temp Range | -65C to 200C |
| Drain Efficiency (typ) | 29% | Mounting | Screw |
| Mode Of Operation | 1-Carrier W-CDMA/CDMA/TDMA | Number Of Elements | 1 |
| Vswr (max) | 10 | Screening Level | Military |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Noise Figure | - |
PrevNext
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
The following table summarizes revisions to this document.
Revision
Date
0
Feb. 2008
• Initial Release of Data Sheet
1
Mar. 2008
• Added Fig. 12, MTTF versus Junction Temperature, p. 7
MRF6S21190HR3 MRF6S21190HSR3
10
PRODUCT DOCUMENTATION
REVISION HISTORY
Description
RF Device Data
Freescale Semiconductor
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