MRF6S21190HR3

Manufacturer Part NumberMRF6S21190HR3
DescriptionMOSFET RF N-CH 54W NI880
ManufacturerFreescale Semiconductor
MRF6S21190HR3 datasheets

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Specifications of MRF6S21190HR3

Transistor TypeN-ChannelFrequency2.11GHz
Gain16dBVoltage - Rated68V
Current Rating10µACurrent - Test1.6A
Voltage - Test28VPower - Output54W
Package / CaseNI-880Channel TypeN
Channel ModeEnhancementDrain Source Voltage (max)68V
Output Power (max)54WPower Gain (typ)@vds16dB
Frequency (min)2.11GHzFrequency (max)2.17GHz
Package TypeNI-880Pin Count3
Input Capacitance (typ)@vds526@28VpFOutput Capacitance (typ)@vds185@28VpF
Reverse Capacitance (typ)2.8@28VpFOperating Temp Range-65C to 200C
Drain Efficiency (typ)29%MountingScrew
Mode Of Operation1-Carrier W-CDMA/CDMA/TDMANumber Of Elements1
Vswr (max)10Screening LevelMilitary
Lead Free Status / RoHS StatusLead free / RoHS CompliantNoise Figure-
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−20
V
= 28 Vdc, I
= 1600 mA
DD
DQ
f1 = 2135 MHz, f2 = 2145 MHz
−30
Two−Tone Measurements, 10 MHz Tone Spacing
−40
3rd Order
−50
5th Order
−60
7th Order
−70
1
10
P
, OUTPUT POWER (WATTS) PEP
out
Figure 7. Intermodulation Distortion Products
versus Output Power
1
0
−1
−2
−3
−4
−5
20
19
18
G
T
= −30_C
ps
C
17
25_C
16
85_C
15
14
η
D
13
1
10
P
, OUTPUT POWER (WATTS) CW
out
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
MRF6S21190HR3 MRF6S21190HSR3
6
TYPICAL CHARACTERISTICS
−10
V
= 28 Vdc, P
DD
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
−20
−30
−40
IM7−L
−50
IM7−U
−60
100
200
1
Figure 8. Intermodulation Distortion Products
−1 dB = 43.79 W
−2 dB = 65.39 W
−3 dB = 85.07 W
η
D
V
= 28 Vdc, I
= 1600 mA, f = 2140 MHz
DD
DQ
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
30
40
50
60
70
P
, OUTPUT POWER (WATTS)
out
Figure 9. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
17
60
−30_C
25_C
50
16
40
85_C
30
15
20
14
V
= 28 Vdc
DD
10
I
DQ
I
= 1600 mA
DQ
f = 2140 MHz
f = 2140 MHz
13
0
0
100
200
Figure 11. Power Gain versus Output Power
= 175 W (PEP), I
= 1600 mA
out
DQ
IM3−U
IM3−L
IM5−U
IM5−L
10
TWO−TONE SPACING (MHz)
versus Tone Spacing
45
Ideal
40
35
30
25
Actual
20
15
80
90
= 1600 mA
V
= 24 V
DD
100
P
, OUTPUT POWER (WATTS) CW
out
RF Device Data
Freescale Semiconductor
100
32 V
28 V
200

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