MRF6P24190HR5

Manufacturer Part NumberMRF6P24190HR5
DescriptionMOSFET RF N-CH 28V 190W NI-1230
ManufacturerFreescale Semiconductor
MRF6P24190HR5 datasheets

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Specifications of MRF6P24190HR5

Transistor TypeN-ChannelFrequency2.39GHz
Gain14dBVoltage - Rated68V
Current Rating10µACurrent - Test1.9A
Voltage - Test28VPower - Output40W
Package / CaseNI-1230Lead Free Status / RoHS StatusLead free / RoHS Compliant
Noise Figure-  
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed primarily for large - signal output applications at 2450 MHz. Device
is suitable for use in industrial, medical and scientific applications.
• Typical CW Performance at 2450 MHz, V
P
= 190 Watts
out
Power Gain — 13.2 dB
Drain Efficiency — 46.2%
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2340 MHz, 190 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
(1,2)
Operating Junction Temperature
CW Operation @ T
= 25°C
C
Derate above 25°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 100°C, 160 W CW
Case Temperature 83°C, 40 W CW
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006-2009. All rights reserved.
RF Device Data
Freescale Semiconductor
= 28 Volts, I
= 1900 mA,
DD
DQ
Operation
DD
Document Number: MRF6P24190H
Rev. 3, 2/2009
MRF6P24190HR6
2450 MHz, 190 W, 28 V
CW
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 375D - 05, STYLE 1
NI - 1230
Symbol
Value
Unit
V
- 0.5, +68
Vdc
DSS
V
- 0.5, +12
Vdc
GS
T
- 65 to +150
°C
stg
T
150
°C
C
T
225
°C
J
CW
250
W
1.3
W/°C
(2,3)
Symbol
Value
Unit
R
°C/W
θJC
0.22
0.24
MRF6P24190HR6
1

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MRF6P24190HR5 Summary of contents

  • Page 1

    ... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006-2009. All rights reserved. RF Device Data Freescale Semiconductor = 28 Volts, I ...

  • Page 2

    ... III (Minimum) Min Typ Max Unit — — 10 μAdc — — 1 μAdc — — 1 μAdc Vdc 2 2.8 4 Vdc 0.1 0.21 0.3 Vdc — 1.5 — Avg 2390 MHz Carrier out 23.5 — % — dBc — dBc — — Device Data Freescale Semiconductor ...

  • Page 3

    ... V Tantalum Capacitors C12, C16 47 μ Tantalum Capacitors C18, C19, C20, C21, C23, 10 μ Chip Capacitors C24, C25, C26 C27, C28 330 μ Electrolytic Capacitors R1, R2 240 Ω, 1/4 W Chip Resistors RF Device Data Freescale Semiconductor Z28 C5 Z16 Z18 Z14 Z8 Z10 Z12 DUT Z9 ...

  • Page 4

    ... R1 C12 C11 + + C1 C2 MRF6P24190H Rev. 1 C16 C15 R2 *Stacked Figure 2. MRF6P24190HR6 Test Circuit Component Layout — 2450 MHz MRF6P24190HR6 4 C10* C9 C14* C13* C27 + C20 C21 C17 C18 C19 C22 C23 C24 + C28 C25 C26 RF Device Data Freescale Semiconductor ...

  • Page 5

    ... This above graph displays calculated MTTF in hours when the device is operated at V MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 6. MTTF versus Junction Temperature RF Device Data Freescale Semiconductor 10.5 ...

  • Page 6

    ... P = 190 out source load MHz W W 2450 12.72 - j8.48 2.75 - j4. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device + Under − Test − source load Output Matching Network RF Device Data Freescale Semiconductor ...

  • Page 7

    ... aaa ccc (LID) E PIN 5 M (INSULATOR) bbb Device Data Freescale Semiconductor PACKAGE DIMENSIONS Q 2X bbb (FLANGE) ccc (LID (INSULATOR) T SEATING PLANE bbb CASE 375D - 05 ISSUE 1230 NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY ...

  • Page 8

    ... Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part numbers Feb. 2009 • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13232 MRF6P24190HR6 8 PRODUCT DOCUMENTATION REVISION HISTORY Description the RF test condition voltage callout for Characteristics table GS(Q) RF Device Data Freescale Semiconductor ...

  • Page 9

    ... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

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